Zinc oxide light-emitting component and preparation method thereof

A light-emitting element, zinc oxide technology, applied in chemical instruments and methods, light-emitting materials, etc., can solve the problems of low luminous efficiency and weak luminous brightness, and achieve the effects of high ultraviolet luminous intensity, low cost, and enhanced spontaneous radiation.

Inactive Publication Date: 2010-09-22
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current zinc oxide thin film still has problems such as weak luminous brightness and low luminous efficiency. Therefore, how to enhance the ultraviolet luminous intensity of zinc oxide thin film has always been an important content in the research of semiconductor light-emitting materials in the fields of materials science and microelectronics.

Method used

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  • Zinc oxide light-emitting component and preparation method thereof
  • Zinc oxide light-emitting component and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The ZnO film was prepared by the sol-gel method, and then a metal silver layer with a thickness of 2nm was deposited on the surface of the film by magnetron sputtering equipment, and then the ZnO film with the silver layer was placed in a vacuum of 1×10 -3 Under a vacuum environment of Pa, annealing treatment is performed at a temperature of 300° C. for 30 minutes, and finally cooled to room temperature to obtain a zinc oxide light-emitting element with a silver layer of a micro-nano structure formed on the surface.

[0021] figure 1 It is a comparison chart of the luminescence spectra of the zinc oxide light-emitting element prepared in Example 1 of the present invention and the zinc oxide thin film without a metal layer under cathode ray excitation. like figure 1 As shown, 1 is the luminescence spectrum of the zinc oxide thin film without metal layer, and 2 is the luminescence spectrum of the zinc oxide light-emitting element of this embodiment. It can be seen that t...

Embodiment 2

[0023] The ZnO film was prepared by magnetron sputtering, and then a metal palladium layer with a thickness of 1 nm was deposited on the film surface by electron beam evaporation equipment, and then the ZnO film provided with the palladium layer was placed in a vacuum of 1 × 10 -4 Under a vacuum environment of Pa, annealing treatment is performed at a temperature of 200° C. for 180 minutes, and finally cooled to room temperature to obtain a zinc oxide light-emitting element with a palladium layer of a metal micro-nano structure formed on the surface.

Embodiment 3

[0025] The ZnO film was prepared by pulsed laser deposition method, and then a metal platinum layer with a thickness of 25nm was deposited on the surface of the film by magnetron sputtering equipment, and then the ZnO film with the platinum layer was placed in a vacuum of 1×10 -5 Under a vacuum environment of Pa, annealing treatment is performed at a temperature of 500° C. for 15 minutes, and finally cooled to room temperature to obtain a zinc oxide light-emitting element with a palladium layer of a metal micro-nano structure formed on the surface.

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Abstract

The invention discloses a zinc oxide light-emitting component and a preparation method thereof. The zinc oxide light-emitting component comprises a zinc oxide film and is characterized by also comprising a metal layer located on the surface of the zinc oxide film, wherein the metal layer has a metal micro-nano structure. The preparation method comprises the following steps: forming the metal layer on the surface of the zinc oxide film, and then carrying out annealing treatment on the zinc oxide film and the metal layer in a vacuum environment to enable the metal layer to form the metal micro-nano structure. The preparation method has the characteristics of simple process, low cost and high practicability and the like, and the prepared zinc oxide light-emitting component has very high ultraviolet luminous intensity under the excitation of cathode rays.

Description

technical field [0001] The invention relates to the technical field of luminescent materials, in particular to a zinc oxide luminescent element and a preparation method thereof. Background technique [0002] Today, with the rapid development of information science and technology, people's demand for materials, devices and technologies in the ultraviolet band is becoming more and more urgent. As a representative of ultraviolet optoelectronic materials, zinc oxide is a self-activated wide-bandgap semiconductor material with a hexagonal structure, and its bandgap at room temperature is 3.36eV, especially its exciton binding energy is as high as 60meV. It has the characteristics of working at room temperature or even higher temperature. In addition, zinc oxide also has the advantages of good electrical conductivity, stable chemical properties, strong radiation resistance, and easy film formation. However, the current zinc oxide thin film still has problems such as weak luminou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/54
Inventor 周明杰马文波吕婷唐晶
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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