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2results about How to "Avoid self-excitement" patented technology

A highly integrated, miniaturized, high-power, high-efficiency delay microwave T / R component

PendingCN122085222Aimprove manufacturabilityRelaxed machining accuracy requirementsWave based measurement systemsMicrocontrollerRadar antennas
This invention relates to the field of phased array radar antenna technology, and more particularly to a highly integrated, miniaturized, high-power, high-efficiency delay microwave T / R assembly. The assembly includes a housing and a PCB (Printed Circuit Board) for functional integration. The PCB is located on the lower left side of the housing, housing a multi-functional MMIC (Multi-Microelectronics Microcontroller) chip manufactured using MCM (Multi-Chip Module) technology. The multi-functional MMIC chip is located on one side of the PCB, and a wave control chip is located on the other side. The technical solution involves using an SMP (Surface Mount Multi-Fold) button RF connector, where the button and circuit board are softly interconnected inside the assembly. Microwave signals within the circuit board are transmitted via vias, resulting in high input / output isolation and preventing loop self-oscillation. This soft-contact interconnection between the button and the circuit board significantly improves the manufacturability of the assembly.
Owner:NANJING JIKAI MICROWAVE TECH CO LTD

A semiconductor device and a method of fabricating the same

The application provides a semiconductor device and a preparation method thereof, and relates to the technical field of semiconductors. A first gate field plate electrically connected with a gate metal is added between a source field plate and a drain metal, and the first gate field plate is electrically connected with the gate metal through a resistor. In this way, the first gate field plate has a lower potential. On one hand, the first gate field plate can shield the electric field between the drain and the gate, and can further deplete the two-dimensional electron gas at the channel, so as to reduce the Cgd of the device, improve the gain and stability of the device, and avoid self-excitation of the device. On the other hand, the first gate field plate can shield the electric field between the drain and the source, reduce the Cds of the device, and thus improve the drain efficiency of the device.
Owner:SHENZHEN SHIDAI SUXIN TECH CO LTD