Driving circuit of field effect transistor, driving system thereof and air conditioner

Abstract

The invention provides a driving circuit of a field effect transistor, a driving system thereof and an air conditioner. The driving circuit comprises a driving module, a first resistor and a second resistor. The resistance of the first resistor is higher than a first preset resistance threshold. The resistor of the second resistor is lower than a second preset resistance threshold. The driving module is used for receiving an input control signal, and outputs a first driving signal with a high level when the control signal is in the high level; wherein after the first resistor, the first driving signal is input to the gate electrode of the external field effect transistor, thereby controlling conduction between the drain electrode and the source electrode of the field effect transistor. When the control signal is in the low level, the driving module outputs a second driving signal with a low level, wherein after the second resistor, the second driving signal is input into the gate electrode of the field effect transistor, thereby controlling switching-off between the drain electrode and the source electrode of the field effect transistor. The driving circuit, the driving system andthe air conditioner can reduce switch loss of the field effect transistor under a precondition that no self excitation of the field effect transistor is caused.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a driving circuit, a driving system and an air conditioner of a field effect transistor. Background technique [0002] Gallium nitride high-mobility transistor GaN HEMT devices belong to the third-generation semiconductor devices. Compared with the first-generation Si-based semiconductor devices, they have the characteristics of fast switching speed, high operating junction temperature, and high power density. [0003] At present, GaN HEMT devices and their driving circuits in related technologies such as figure 1 As shown, the driving voltage VDD is generally about 5V. The control signal is input from the input terminal IN of the drive circuit, output from the output terminal OUT of the drive circuit, and then input to the gate G of the GaN HEMT device after passing through the resistor R to control the gap between the drain D and the source S of the GaN HEMT device. on...

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Problems solved by technology

However, a larger gate resistance will lead to a larger switching loss of the GaN HEMT device

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