32 results about "Superconducting electronics" patented technology

A broadband multibit digital radio-frequency (RF) signal is synthesized digitally. to convert the digital signal to a high-power analog signal for RF transmission. Each bit (or cluster of bits) of the digital signal is first separately amplified using a fast switching amplifier with a controlled dc power supply voltage. The DC voltages are weighted to match the significance of the bits, and controlled by a set of calibrated DC reference sources to maintain high precision. The amplified digital signals from the various bits are then combined and passed through an appropriate analog filter to generate the RF signal to be transmitted. Such a signal can exhibit broad bandwidth, high dynamic range, excellent linearity, and low noise. Preferred embodiments of this system can incorporate superconducting electronic elements. For ultimate precision, a set of primary or secondary DC voltage standards can be used to regulate the switching amplifier supply voltages.

A method for increasing the integration level of superconducting electronic circuits, comprising fabricating a series of planarized electrically conductive layers patterned into wiring, separated by planarized insulating layers, with vias communicating between the conductive layers. Contrary to the standard sequence of patterning from the bottom up, the pattern of vias in at least one insulating layer is formed prior to the pattern of wiring in the underlying conductive layer. This enables a reduction in the number of planarization steps, leading to a fabrication process which is faster and more reliable. In a preferred embodiment, the superconductor is niobium and the insulator is silicon dioxide. This method can provide 10 or more wiring layers in a complex integrated circuit, and is compatible with non-planarized circuits placed above the planarized wiring layers.

An amorphous silicon (a-Si) dielectric for superconducting electronics is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. Complete layers or thinner sub-layers of a-Si are formed by physical vapor deposition at low temperatures (<350 C, e.g. ˜200 C) to prevent reaction with superconducting materials, then exposed to fluorine. The fluorine may be a component of a gas or plasma, or it may be a component of an interface layer. The fluorine is driven into the a-Si by heat (e.g., <350 C) or impact to passivate defects such as dangling bonds.

The invention discloses a superconducting heterodyne integrated receiver with a terahertz quantum-cascade laser as a local oscillation source. The superconducting heterodyne integrated receiver comprises the terahertz quantum-cascade laser, a frequency mixer, a first intermediate frequency amplifier, a second intermediate frequency amplifier, a spectrometer, a convex lens and a wave beam splitter. Local oscillation reference signal wave beams output by the terahertz quantum-cascade laser are shaped by the convex lens, then the local oscillation reference signal wave beams and detected signals are coupled to the frequency mixer through the wave beam splitter wave beam splitter, the first intermediate frequency amplifier and the second intermediate frequency amplifier amplify intermediate frequency signals output by the frequency mixer, and the spectrometer analyzes output signals of the second intermediate frequency amplifier. The terahertz quantum-cascade laser, the convex lens, the wave beam splitter, the frequency mixer and the first intermediate frequency amplifier are arranged in a low-temperature vacuum environment which is 4K in temperature and achieved by the same vacuum dewar, any adjustable optical element for coupling the output signals of the terahertz quantum-cascade laser to the superconducting electronic frequency mixer is not needed, the structure is simple and compact, and integration and miniaturization are facilitated.

A Josephson junction having a barrier layer sandwiched by two superconductors wherein the superconductors include one or more elements selected from the group of Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, one or more elements selected from the group of Ba, Sr and Ca, and Cu and oxygen, wherein the two superconductors each include at least five elements with compositions different from each other, or the barrier layer (5) includes one or more elements selected from the group of La, Nd, Sm and Eu, and one or more elements selected from the group of Y, Gd, Dy, Ho, Er, Tm, Yb and Lu.

A multiphase clock circuit in which bit errors are propagated only for the duration of the clock cycle in which a bit error occurs. The circuit recovers automatically from bit errors and is capable of operating at high frequency with high clock precision. The multiphase clock circuit can generate a plurality of clock pulse streams, each pulse stream at the same clock frequency, with fixed phase relationships among the streams. The multiphase clock circuit includes a master clock signal of frequency fc which is applied to a divide by N frequency divider circuit for producing a base clock signal of fc/N. The base clock signal is sequentially applied to the data input of a series chain of N clocked data flip-flops (DFFs) each of which is simultaneously clocked by a clock signal of frequency fc to produce N clock signals of base frequency fc/N separated from each other by a constant time delay T=1/fc.

The present invention discloses one kind of aluminum nitride film on monocrystalline magnesia substrate and its preparation process. Via RE magnetically controlled sputtering process, aluminum nitride film is grown on unheated monocrystalline magnesia substrate, and the film has excellent matching with the monocrystalline substrate and high quality. The present invention is applied widely in the preparation and development of insulating layer and deactivated layer for high temperature, high frequency, great power and short wavelength photoelectronic device, pressure sensor, heat radiance sensor, high frequency acoustic surface wave device and electronic device in microelectronic and superconductive electronic fields.

A superconducting signal transmission apparatus provided with a vacuum container 11, a superconducting electronic device 12 provided in the vacuum container 11, an input side transmission line 13 and output side transmission line 14 for connection to the superconducting electronic device 12 through the vacuum container 11, and a cooling mechanism (15, 16, 17) for cooling the superconducting electronic device 12 and further having a heat cutoff signal transmission unit 20 inserted at least at part of the input side and output side transmission lines 13 and 14. The heat cutoff signal transmission unit 20 is comprised of a substrate 31 and a flat circuit body 30 provided with a signal transmission line 32 and ground layer (33, 33-1, 33-2). The substrate 31 is comprised of a dielectric material having a small heat conductivity. The conductor portions forming the signal transmission line 32 and the ground layer are formed with thin thicknesses enabling suppression of the inflow of heat from the outside.

The invention relates to Tl2Ba2CaCu2O8 (Tl-2212) superconducting film and its making method. Its superconducting change temperature is higher than 100K; the critical current density is greater than 1000000 A/sq cm at 77K; at 77K and at 10GHz, its surface resistance is less than 1m Ohm. Its thickness is between 10-1000nm. Its making method mainly two steps; first, depositing Tl-Ba-Ca-Cu-O non-crystalline pioneer film; second, making the high-temperature treatment to convert the non-crystalline pioneer film into the superconducting film. The invention resolves the method to make large area double-sided Tl-2212 extended superconducting film, which can make microwave passive devices or other superconducting electronic ones.

The invention relates to the technical field of superconducting electronics, in particular to a superconducting transition edge detector and a preparation method thereof. According to the preparation method provided by the invention, a cut-off layer, a thin film layer, a superconducting material layer, a normal metal strip and/or a normal metal point, a heat sink piece, an absorber and other components are prepared on a substrate in sequence. In the invention, in order to alleviate the problem that a twisted broken line appears at a superconducting transition edge, a normal metal strip grows above a superconducting thin film of a TES detector and some normal metal points are properly added, and in order to reduce the complexity during preparation of the detector and solve the problem of superconductor quenching, an absorber is in direct contact with a superconducting material layer (superconducting thin film), the thickness of a molybdenum thin film is increased when the superconducting thin film is prepared, and the superconducting transition temperature of the detector is regulated and controlled through two sub-layers of the superconducting material layer and three layers of thin films of the absorber.

The invention provides a superconducting tunnel junction, a superconducting electronic component and a preparation method thereof. The superconducting tunnel junction comprises a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed above the dielectric layer, wherein the lower electrode and the upper electrode respectively comprise a multi-layer structure, and the multi-layer structure comprises different superconducting material layers. The superconducting tunnel junction forms a heterogeneous superconducting tunnel junction, and superconducting energy bands of multiple layers of different superconducting materials are gradually increased in the direction from the dielectric layer to the upper electrode and the lower electrode. In a Josephson tunnel junction formed by an upper electrode and a lower electrode which are both of a two-layer structure and an electronic component comprising the Josephson tunnel junction, the interfacial energy band difference of heterogeneous superconducting materials and the Andreev reflection interact, and a second type superconducting material Josephson tunnel junction between two layers of first type superconducting materials forms a resonant cavity. The resonant frequency of the resonant cavity can reach 500GHz-900GHz, and a gap band between a submicron wave and an infrared spectrum is filled, so that the resonant cavity can be applied to a broadband ultrahigh frequency oscillator.

The invention discloses a low-temperature microwave filtering system based on electromagnetic coupling of adiabatic space, The invention can effectively solve the problem that the conductive heat leakage of the low-temperature microwave filter module is large due to the direct connection of the input and output cables, and the conductive heat leakage of the low-temperature microwave filter moduleis reduced by the way of electromagnetic coupling in the adiabatic space, so that the whole temperature of the low-temperature microwave filter module is uniform and stable, and the performance of thelow-temperature microwave filter module is more stable and excellent; (cable with more excellent performance, i. E., coarser and short than previously available, enable that overall volume of the microwave electronic system to be reduced, the performance to be better, the power to be great, and the miniaturization of the microwave electronic system to be facilitated; On the premise of installingthe same number of cryogenic filter modules, the power consumption of the refrigeration platform is greatly reduced, and the volume and manufacturing cost of the superconducting electronic system aregreatly reduced. It makes possible the realization of some multi-channel superconducting electronic systems which can not be manufactured due to the limitation of cryogenic platforms.

The invention is directed to a device and method to engineer the superconducting transition width by suppressing the phonon populations responsible for the Cooper-pair decoherence below the superconducting transition temperature via phononic bandgap engineering. The device uses phononic crystals to engineer a phononic frequency gap that suppresses the decohering thermal phonon population just below the Cooper-frequency, and thus the normal conduction electron population. For example, such engineering can relax the cooling requirements for a variety of circuits yielding higher operational quality factors for superconducting electronics and interconnects.