28 results about "Superconducting electronics" patented technology

The invention discloses a superconducting rectifier, a superconducting diode and a manufacturing and control method thereof, and belongs to the technical field of superconducting electronics, the superconducting rectifier comprises more than one superconducting diode, the superconducting diode comprises an insulating substrate and a superconducting nanowire, the superconducting nanowire is provided with a narrowing section, and the narrowing section is provided with a narrow section. The narrowing section is connected with a first gate line and a second gate line, the first gate line and the second gate line are symmetrically arranged, and the first gate line and the second gate line are both perpendicular to the superconducting nanowire. According to the invention, in-situ reconfigurable reversal symmetry destruction can be realized through a nanoscale hot spot controlled by a grid electrode; electrically controlled opening or closing and polarity reversal are realized by adjusting a small grid current without changing a magnetic field; the superconductive rectifier realizes electrically reconfigurable full-wave and half-wave rectification, and paves a way for development of extensible and electrically programmable superconductive electronic devices.

The invention provides a single / double-module energy-adjustable superconducting electron accelerator device, a medical isotope production system and a medical isotope production method, and the device comprises an injection system which is used for generating an electron beam current with certain energy and current intensity; the acceleration module system comprises single or double parallel acceleration modules, and each acceleration module comprises a superconducting cavity and a low-temperature unit; the low-temperature unit comprises a refrigerator, a high-thermal-conductivity cold chain, and a cold shield and a vacuum shell which sequentially cover the periphery; the radio frequency system is used for feeding microwave power into the superconducting cavity, maintaining the amplitude and phase stability of an electromagnetic field and accurately compensating the frequency deviation of the superconducting cavity; and the electron motion trail control system is used for guiding the electron beam to pass through the acceleration module and the plurality of circulating transmission pipelines with the corner radiuses sequentially enlarged for multiple times. The technical problems that an existing accelerator is limited by serious heating and cannot achieve high-flow-intensity and high-energy operation, a low-temperature cooling system is complex, so that the operation and maintenance cost is high, high energy and high flow intensity cannot be considered at the same time, and medical isotope production is difficult to meet are solved.

The invention discloses a grid-control superconducting nanowire low-temperature thermometer and a preparation method thereof, and relates to the technical field of superconducting electronics and low-temperature detection. Comprising a substrate and a superconducting layer, and the superconducting layer comprises a grid electrode, a superconducting nanowire and an inductor; the grid electrode is vertical to the superconductive nanowire, has a distance from the superconductive nanowire and is used for electric field regulation and control; the superconducting nanowire is connected with the inductor and is used for responding to particles injected into the grid electrode and outputting a pulse signal; the inductor is connected with the superconducting nanowire and is used for inhibiting a latch-up effect under high bias current; the superconducting layer material is a superconducting thin film material with a superconducting transition temperature Tc exceeding a measurement temperature zone; according to the invention, (quasi) particle injection in the critical current process of the superconducting nanowire is regulated and controlled through the grid electric field, high-precision measurement of the low temperature is realized in combination with nonlinear response of the pulse counting rate and the temperature, and the device and the method have the advantages of wide temperature zone measurement, low noise, high sensitivity, low power consumption, small self-heating, simple measurement system and low cost.

The invention provides a single-module double-cavity parallel superconducting electron accelerator device, a medical isotope production system and a medical isotope production method, and the device comprises an injection system which is used for generating an electron beam current with certain energy and current intensity; the acceleration module system comprises a low-temperature unit and a superconducting cavity; the low-temperature unit comprises a refrigerator, a high-thermal-conductivity cold chain, and a cold shield and a vacuum shell which sequentially cover the periphery; the refrigerating machine is connected with the superconducting cavity through a high-thermal-conductivity cold chain; the radio frequency system is used for feeding microwave power into each superconducting cavity, maintaining the amplitude and phase stability of an electromagnetic field and accurately compensating the frequency deviation of the superconducting cavity; and the electronic motion trail control system is used for guiding the electronic beam current to pass through the double parallel superconducting cavities and a plurality of circulating transmission pipelines of which the corner radiuses are sequentially enlarged for multiple times. The technical problems that an existing accelerator is limited by serious heating and cannot achieve high-flow-intensity and high-energy operation, a low-temperature cooling system is complex, so that the operation and maintenance cost is high, high energy and high flow intensity cannot be considered at the same time, and medical isotope production is difficult to meet are solved.

The present disclosure describes systems and methods for generating a superconducting electronic circuit design. The system includes a memory and a processor. The processor simulates a superconducting electronic circuit design using a first process variation to produce a first score and simulates the superconducting electronic circuit design using a second process variation to produce a second score. The processor, in response to determining that the first score is lower than the second score, simulates the superconducting electronic circuit design using the first process variation and a first design variation to produce a third score and simulates the superconducting electronic circuit design using the first process variation and a second design variation to produce a fourth score. The processor updates the superconducting electronic circuit design using the first process variation and the first design variation in response to determining that the third score is higher than the fourth score.

The application discloses a superconducting diode device based on a single-layer niobium nitride nanoring and a control method thereof, and belongs to the technical field of superconducting electronics. The superconducting diode device comprises an insulating substrate and a niobium nitride layer. The niobium nitride layer comprises a first working line, a second working line and an intermediate ring. The first working line comprises a first line segment, a second line segment and a first intermediate part. The second working line comprises a third line segment, a fourth line segment and a second intermediate part. The intermediate ring is connected with the first intermediate part and the second intermediate part. The application uses a single-layer niobium nitride film, and realizes a structure of a superconducting diode with a minimum size and a single layer by means of the action of a nanoring with geometric asymmetry and an external magnetic field. The device size is greatly reduced, which is conducive to high-density integration and miniaturization application, and conducive to realizing low-power consumption and high-speed rectification control. The difficulty of material and interface control is greatly reduced. The process flow is simple and has good repeatability, which is conducive to reducing the preparation cost and improving the consistency of the device.

The invention relates to the technical field of superconduction, in particular to refrigeration equipment for a superconductive low-temperature environment, a damping and buffering assembly, a cold disc and a superconductive electronic module are arranged above the inner bottom surface of a vacuum cavity, the damping and buffering assembly comprises a copper bar with a C-shaped vertical section, the C-shaped copper bar is arranged between a cold head of a low-temperature refrigerator and the cold disc, and the superconductive electronic module is arranged between the cold head and the cold disc. The working vibration of the low-temperature refrigerator is absorbed by utilizing the elastic deformation capability of the C shape, and the vibration is prevented from being transmitted to the cold disc and the superconducting electronic module, so that a stable low-temperature environment required by superconducting is ensured, and the damage risk of the vibration to the brittle substrate is solved; a plurality of cold conduction supporting assemblies are further arranged in the vacuum cavity, and the cold conduction supporting assemblies are designed to be of independent structures distributed around the periphery of the copper bar, so that the cold conduction supporting assemblies do not participate in core cold transfer and bear composite loads of the cold disc, the superconducting electronic module and the cable assembly only through connection with the inner bottom face of the vacuum cavity and the cold disc. Therefore, cold insulation transfer and bearing capacity can be taken into consideration at the same time.

The utility model provides a superconducting electron linear accelerator device for isotope production, which comprises an injector, a superconducting acceleration module and an irradiation target area which are arranged in sequence, and the superconducting acceleration module is connected with a low-temperature cooling system, a radio frequency driving system and a control system; the superconducting acceleration module comprises a low-beta-value Ni3Sn superconducting cavity and five standard Ni3Sn superconducting cavity modules, the low-beta-value superconducting cavity is an SRF acceleration cavity of a 2-cell cavity with beta = 0.7, and each standard superconducting cavity module consists of four SRF acceleration cavities of the 2-cell cavity with beta = 1 which are connected in series; and the input end of the standard superconducting cavity module adopts a symmetrical double-input coupler. According to the linear accelerator device provided by the utility model, the Ni3Sn superconducting cavity adopts a 2-cell and double-input coupler structure, so that the power requirement of high-power input coupling can be reduced under high flow intensity, a high-power electron beam is generated at lower cost, and efficient and economic production of isotopes is realized.

Cells in a superconducting electronics (SCE) netlist may be levelized. The SCE may use multiple clock phases, and each level in the levelized SCE netlist may be associated with a clock phase. Buffers may be inserted in the SCE netlist so that output ports of the SCE netlist are associated with the same clock phase. A floorplan may be created for the SCE netlist. A placed SCE netlist may be generated based on the floorplan, where cells in each row of the placed SCE netlist may be clocked using the same clock phase.

Logic verification of superconducting electronic circuits is implemented as follows. The superconducting electronic circuit is supposed to implement a desired logic function. A description of the circuit includes a plurality of nodes of the circuit, including one or more input nodes and one or more output nodes. Operation of the superconducting electronic circuit is simulated, including probing signal values at the nodes. These signal values are converted to state transitions of the quantum phase at the nodes (phase state transitions). The phase state transitions are related to the logic values represented by the circuit. The phase state transitions are compared with the desired phase state transitions for the desired logic function. Based on this comparison, it is determined whether the superconducting electronic circuit implements the desired logic function.

The application discloses a direct current superconducting quantum interference device (DC SQUID) simulator with reconfigurable full electrical parameters, belonging to the fields of superconducting electronics and weak magnetic signal detection, and comprises a circuit containing a programmable logic device, which can receive a DC SQUID input signal and model parameters and output a DC SQUID output voltage signal; a DC SQUID characteristic solver, which can be processed by the circuit containing the programmable logic device, and can perform parallel numerical solution on electrical differential equations under given DC SQUID model parameters, and can obtain an actual DC SQUID output voltage signal by post-processing a solution result and store the actual DC SQUID output voltage signal into a memory of the circuit containing the programmable logic device; and a DC SQUID output calculator, which can obtain the DC SQUID output voltage signal by using the DC SQUID input signal and user-set parameters and output the DC SQUID output voltage signal to an output device. The simulator can improve the research and development and test efficiency of DC SQUID readout and control electronics.

The invention relates to a quantum computing device comprising: - a microwave cavity (MC) having a separate or coincident input port (IP) and output port (OP); - a superconducting electronic device (SD) capacitively coupled to the microwave cavity and configured to support a chain of 2N Majorana modes (MM1 – MM4, MM2', MM3'), where N is a positive integer; and - coupling means for applying microwave excitations between each pair of adjacent Majorana modes in the chain. It also relates to a method for realizing a braiding quantum gate on a qubit using a quantum computing device. Figure for the abstract: Fig. 4

The invention discloses a preparation technology of a high-temperature superconducting diode device structure, and particularly relates to the technical field of superconducting electronic devices and micro-nano machining, and the preparation technology comprises the steps: preparing an on-chip magnetic field generation unit on a substrate, and forming an insulation isolation layer above the on-chip magnetic field generation unit; transferring and fixing a high-temperature superconducting material sheet on the surface of the insulating isolation layer, forming a metal electrode layer on the surface of the sheet, and constructing a micro-bridge asymmetric structure; and forming a side wall passivation packaging layer on the surface of the device, and windowing an electrode lead-out area to realize interconnection. After the device is prepared, factory closed-loop calibration is executed by taking coil driving current as control quantity under a low-temperature condition, forward and reverse critical current is obtained through bidirectional sampling, feedback quantity is constructed, and an optimal working window is determined by adopting coarse scanning and fine scanning adaptive iteration; when it is detected that peak position deviation or feedback quantity deviation exceeds a threshold value, re-calibration is triggered, and finally the parameter set is solidified to serve as a factory acceptance basis.

The invention relates to the technical field of superconducting, in particular to a refrigerating structure for a superconducting low-temperature environment, which comprises a vacuum cavity and a low-temperature refrigerator, the low-temperature refrigerator is positioned outside the vacuum cavity, and a cold head of the low-temperature refrigerator extends into the vacuum cavity; a damping and buffering assembly, a cooling disc and a superconducting electronic module which are sequentially arranged above the inner bottom face of the vacuum cavity in a stacked mode are arranged in the vacuum cavity, the sequentially-stacked structure enables a cooling capacity transmission path to be the shortest, and cooling capacity loss caused by path extension is avoided. The damping and buffering device comprises copper bars with long-round vertical sections, the copper bars are located between the low-temperature refrigerator and the cold disc and make contact with the low-temperature refrigerator and the cold disc, the copper bars with the long-round vertical sections have the heat conduction and damping functions, the copper material guarantees efficient transmission of cooling capacity, and the long-round structure absorbs vibration through elastic deformation. And independent heat conduction and shock absorption components do not need to be additionally arranged, so that the problem of unbalanced heat conduction and shock absorption in the prior art is solved.

The invention discloses a superconducting diode device based on a single-layer niobium nitride nanoring and a control method thereof, and belongs to the technical field of superconducting electronics, the superconducting diode device comprises an insulating substrate and a niobium nitride layer, the niobium nitride layer comprises a first working line, a second working line and an intermediate ring, the first working line comprises a first line segment, a second line segment and a first middle part, the second working line comprises a third line segment, a fourth line segment and a second middle part, and the middle ring is connected with the first middle part and the second middle part. According to the invention, the single-layer niobium nitride thin film is used, and by virtue of the effects of the geometrically asymmetric nano circular ring and an external magnetic field, a superconductive diode structure with an extremely small structure and a single layer is realized, so that the size of the device is greatly reduced, high-density integration and miniaturization application are facilitated, and low-power-consumption and high-speed rectification control is facilitated to be realized; the difficulty of material and interface control is greatly reduced; the process flow is simple, the repeatability is good, the preparation cost is reduced, and the device consistency is improved.

The invention discloses a unijunction Josephson probe and a preparation method thereof, and belongs to the technical field of superconducting electronics and scanning probe microscopy, the probe comprises a probe body and a niobium film layer, the probe body is provided with two grooves, the niobium film layer comprises a first electrode and a second electrode which are symmetrically arranged, and the first electrode and the second electrode are arranged in parallel. The first electrode and the second electrode are connected at the top end of the needle body through the middle connecting area, and the first electrode, the middle connecting area and the second electrode form a single Josephson junction. The method comprises the following steps: step 1, pretreating a substrate; step 2, nano needle tip drawing; step 3, performing magnetron sputtering for the first time; step 4, turning over in situ; and 5, carrying out magnetron sputtering for the second time. According to the single-junction structure, a superconducting ring and double-junction symmetric matching are not needed, so that the yield and the preparation reliability of the device are remarkably improved; the preparation of a single Josephson junction at the top end of the nano needle tip is realized for the first time, a simplest nano bridge type weak connection structure is adopted, and a junction region is positioned at the tip end of the needle tip, so that the spatial resolution of near-field detection is improved.

The application discloses a superconducting rectifier, a superconducting diode and a manufacturing and control method thereof, and belongs to the technical field of superconducting electronics, and the superconducting rectifier comprises one or more superconducting diodes, the superconducting diode comprises an insulating substrate and a superconducting nanowire, the superconducting nanowire is provided with a narrowed section, the narrowed section is connected with a first gate line and a second gate line, the first gate line and the second gate line are symmetrically arranged and the first gate line and the second gate line are both perpendicular to the superconducting nanowire. The application can realize in-situ reconfigurable inversion symmetry breaking through the nanoscale hot spot controlled by the gate, can realize electrically controllable opening or closing and polarity inversion by adjusting a small gate current, and does not need to change a magnetic field; the superconducting rectifier realizes electrically reconfigurable full-wave and half-wave rectification, and paves the way for the development of scalable and electrically programmable superconducting electronic devices.

A heat dissipation method comprising: providing a superconducting electronic circuit; applying a thin-film coating over a surface of the circuit, wherein the thin-film coating is mostly transparent to broadband electromagnetic radiation, has a thickness of less than 100 nanometers, and is designed to dissipate visible-spectrum radiation so as to reduce radiative heat absorption by the circuit; and enclosing the thin-film-coated circuit within a broadband-frequency-transparent enclosure that is capable of maintaining superconducting conditions within the enclosure such that the circuit is exposed to broadband-frequency radiation emanating from a location outside of the enclosure.

The invention provides a module serial type superconducting electron accelerator device, a medical isotope production system and a medical isotope production method, and the device comprises an injection system which is used for generating an electron beam current with certain energy and current intensity; the acceleration module system is composed of a plurality of acceleration modules which are connected in series; the acceleration module comprises a superconducting cavity which is provided with acceleration units connected in series, and two ends of the superconducting cavity are beam pipelines; the low-temperature unit comprises a plurality of refrigerators, a high-thermal-conductivity cold chain, and a cold shield and a vacuum shell which sequentially cover the cold ends of the refrigerators and the superconducting cavity; the refrigerator connects a cold head to the outer surface of the superconducting cavity through a high-thermal-conductivity cold chain; the radio frequency system is used for feeding microwave power into each superconducting cavity, maintaining the amplitude and phase stability of an electromagnetic field and accurately compensating the frequency deviation of the superconducting cavity; and the electronic motion trail control system is used for guiding an electronic beam trail and monitoring beam parameters. The technical problems that an existing accelerator is difficult to meet the requirement for efficient and low-cost acceleration of high-energy electron beams and cannot adapt to medical isotope production are solved.

The invention belongs to the technical field of superconducting electronic devices, and particularly relates to a novel tantalum-based Josephson junction and a preparation method thereof, and the preparation method comprises the following steps: sequentially depositing a Nb seed layer and a Ta layer on a substrate, then carrying out the in-situ oxygen plasma oxidation of the Ta layer in the same equipment cavity to form a TaOx barrier layer, and carrying out the in-situ oxygen plasma oxidation of the TaOx barrier layer. And an Nb layer is deposited on the TaOx barrier layer, and an Nb-Ta-TaOx-Nb four-layer laminated structure is obtained. Nb and Ta are adopted as external circuit materials, the superconducting transition temperature is higher than that of Al, and the requirement for the temperature of a refrigerator is lower; compared with AlOx, TaOx has great significance in suppressing TLS (dual energy level system) noise in quantum bits, and the defect density of the TLS can be remarkably reduced by means of a TaOx barrier layer formed by in-situ oxygen plasma oxidation.

This invention discloses a method for preparing ultra-low oxygen metallic vanadium. First, vanadium oxide and aluminum powder are used as raw materials, with aluminum-calcium alloy particles added as a composite reducing agent and synergistic deoxidizer to prepare a low-oxygen vanadium-aluminum alloy. Electron beam melting is then used to deeply remove metallic impurities such as aluminum, calcium, and iron, resulting in a dense, high-purity, low-oxygen vanadium plate. Next, the vanadium plate undergoes low-temperature vacuum diffusion deoxidation with calcium powder embedding to deeply remove dissolved oxygen in the crystal lattice, ultimately obtaining ultra-low oxygen high-purity metallic vanadium. This invention overcomes the deoxidation limit of V-O solid solutions through a three-stage coupling of aluminum-calcium synergistic reduction, electron beam refining, and calcium embedding low-temperature deoxidation. The process is short, highly synergistic, and suitable for industrial production. The resulting high-purity metallic vanadium has an oxygen content ≤30ppm and a purity ≥99.9%, making it suitable for high-end fields such as radio frequency superconducting cavities, magnetron sputtering targets, nuclear industry structural materials, and superconducting electronic devices.

Packaging architecture for superconducting systems, featuring a) a dielectric core substrate (0001) with a first surface forming a functional side (B) and an opposing second surface forming a connection side (A), wherein the core substrate (0001) is equipped with a prefabricated internal wiring comprising vertical connections (0002) and horizontal contact layers (0009), b) a passive plane (0100) connected to the first surface of the core substrate (0001), comprising at least one dielectric buffer layer (0101), wherein the buffer layer has a reduced surface roughness compared to the first surface of the core substrate (0001), c) an active layer (0200) connected to the passive layer (0100), which has at least one active superconducting functional layer (0250) from which active superconducting components (0205, 0215) can be extracted, d) at least one conductive vertical connection (0002) between the connection side (A) of the core substrate (0001) and at least one conductive vertical connection (0110) passing through the passive plane (0100), e) at least one contacting element (0006, 0007) arranged on the connection side (A) and connected to the conductive vertical connection (0002) according to feature d) to the next subordinate packaging hierarchy level, characterized in that the dielectric core substrate (0001) is selected from a list of ceramic, glass-ceramic and glassy materials, which includes high-temperature multilayer single-fire ceramics (HTCC), low-temperature multilayer single-fire ceramics (LTCC) and ultra-low-temperature multilayer single-fire ceramics (ULTCC).

The application belongs to the technical field of superconducting electronic devices, and particularly relates to a novel tantalum-based Josephson junction and a preparation method thereof, which comprises the following steps: sequentially depositing a Nb seed layer and a Ta layer on a substrate to form the Nb seed layer and the Ta layer, then performing in-situ oxygen plasma oxidation on the Ta layer in the same equipment cavity to form a TaOx barrier layer, and depositing a Nb layer on the TaOx barrier layer to obtain a Nb-Ta-TaOx-Nb four-layer laminated structure. By adopting Nb and Ta as the outer circuit material, the superconducting transition temperature is higher than that of Al, and the requirement for the temperature of a refrigerator is lower. Compared with AlOx, TaOx has great significance in inhibiting the TLS (two-level system) noise in a quantum bit, and the TaOx barrier layer formed by means of in-situ oxygen plasma oxidation can significantly reduce the two-level system (TLS) defect density.

The invention relates to the field of superconducting electronic devices, in particular to a superconducting tunnel junction based on liquid metal and a preparation method and application thereof. The superconducting tunnel junction comprises a first gallium electrode, a tunneling barrier layer formed on the first gallium electrode, and a second gallium electrode formed on the tunneling barrier layer; and the tunneling barrier layer is a tunneling barrier layer containing a gallium compound. According to the novel gallium-based liquid metal tunnel junction structure, the superconducting critical temperature can be increased, stable work under the 4K condition is achieved, the preparation process is simple, and the novel gallium-based liquid metal tunnel junction structure has natural oxidation potential barriers and flexible device potential.

The invention relates to the technical field of superconducting electronics devices, and provides a preparation method of a high-temperature superconducting quantum voltage chip and a quantum voltage chip, and the preparation method comprises the steps: providing a single-crystal substrate, and etching a step structure on the surface of the single-crystal substrate to obtain the single-crystal substrate with the step structure; an yttrium barium copper oxide thin film is epitaxially grown on the surface of a single crystal substrate with a step structure, the yttrium barium copper oxide thin film forms step grain boundaries at the border of the edge of the step structure, and each step grain boundary forms a Josephson junction; a buffer layer and an electrode layer are arranged on the surface of the yttrium barium copper oxide thin film, the yttrium barium copper oxide thin film is patterned to form a winding line structure, the quantum voltage chip is obtained, and the winding line structure crosses the step grain boundary and connects the Josephson junctions in series. According to the technical scheme, the technical problem that the quantum voltage chip Josephson junction array in the prior art is low in preparation freedom degree is solved.

The application provides an oxygen order regulation method for ultrathin YBCO nanowires under a packaging boundary condition. The application realizes oxygen order regulation in the nanowires by ultraviolet light treatment on the ultrathin YBCO nanowires under a packaging condition, thereby improving the oxygen distribution uniformity of the ultrathin YBCO nanowires and improving the superconducting performance of the material. During the ultraviolet light treatment process, ultraviolet light irradiation can provide energy for oxygen atoms in the YBCO nanowires, so that the oxygen atoms obtain a certain migration ability in the crystal lattice, thereby inducing local rearrangement and gradually tending to a more ordered arrangement state. The ultrathin YBCO nanowire device processed by the method has more uniform oxygen doping distribution, effectively improves the superconducting performance of the material, provides a simple, controllable and good applicability oxygen order regulation method for the preparation of high-performance superconducting nanowire devices, and has important application value for the development of superconducting electronic devices and related quantum functional devices.