Superconducting transition edge detector and preparation method thereof
A detector, superconducting technology, applied in the field of superconducting electronics
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[0070] The first aspect of the present invention provides a method for preparing a superconducting transition edge detector, comprising:
[0071] 1) forming cut-off layers on both sides of the substrate;
[0072] 2) forming thin film layers on the cut-off layers on both sides;
[0073] 3) forming a superconducting material layer on one side of the film layer;
[0074] 4) forming normal metal strips and / or normal metal points on the edge and / or upper surface of the superconducting material layer;
[0075] 5) forming a heat sink on the film layer on one side of the superconducting material layer;
[0076] 6) forming an absorber on the upper surface of the superconducting material layer;
[0077] 7) Etching to form the edge of the superconducting transition edge detector;
[0078] 8) Etching the backside of the chip.
[0079] In the present invention, in order to alleviate the problem of kink lines appearing at the superconducting transition edge, normal metal strips are gro...
Embodiment 1
[0095] A method for designing and preparing a TES detector suitable for X-ray energy spectrometer applications, comprising the following steps:
[0096] Step 1): prepare a double-sided polished silicon substrate 1, the thickness of silicon is 400um, such as figure 1 shown;
[0097] Step 2): Use low-pressure chemical vapor deposition to grow a silicon dioxide film 2 on both sides of the silicon substrate with a thickness of 500nm. The side view is as follows figure 2 shown;
[0098] Step 3): grow a low-stress silicon nitride film 3 on the silicon dioxide film 2 on both sides of the silicon substrate, with a thickness of 1um, and the side view is as follows image 3 shown;
[0099] Step 4): Molybdenum structures 4 and copper structures 5 are successively grown on the side where the silicon dioxide and silicon nitride films 3 have been grown using magnetron sputtering, with thicknesses of 60nm and 200nm respectively. The side view is as follows Figure 4 shown;
[0100] Ste...
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