Energy band transmutation multiplication region structure for avalanche photodiode, and preparation method of energy band transmutation multiplication structure
An avalanche photoelectric and multiplication region technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as excess noise increase, and achieve the effect of reducing excess noise and improving the difference between electron and hole ionization rates
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[0029] (1) Need to grow In 0.53 Ga 0.47 As avalanche photodiode epitaxial material, the charge region of the absorption region is separated from the multiplication region, and has a transition layer (SAGCM) structure. The semi-insulating or conductive InP single crystal material is used as the substrate of the detector, and the InP material is used as a buffer layer and Si is used for high Doping (at the same time as the lower contact layer, n>2×10 18 cm -3 ), In 0.53 Ga 0.47 As material is used as the absorber layer for low doping Si or no doping (n~2×10 16 cm -3 ), lower-doped Si-In 0.52 Al 0.48 As as charge layer (n~2×10 17 cm -3 ), without doping In 0.53 Ga 0.47 As / In 0.52 Al 0.48 The As superlattice is used as the transition layer between the absorption layer and the charge layer, and the multiplication region uses undoped four layers of In with different compositions. 0.52 Al x Ga 0.48-x The As material constitutes an energy band gradient structure, and t...
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