7 results about "High critical temperature" patented technology

To provide a super-conductive device which uses a seed layer to improve a super-conductive critical temperature of a metal nitride layer.SOLUTION: A super-conductive device 100' includes: a substrate 102; an upper part seed layer 106' for forming one of a metal oxide and a metal oxynitride on the substrate; and a metal nitride super-conductive layer 108' and a capping layer 110' directly arranged on the upper seed layer. The upper seed layer is formed of a first metal, one of oxide and oxynitride, and the super-conductive layer is formed of a second metal, nitride. The first metal is aluminum and the second metal, nitride is one of niobium nitride, titanium nitride, and niobium titanium nitride.SELECTED DRAWING: Figure 4B

A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

This invention discloses the preparation of (Cu,C)Ba2Ca on a metal soft substrate. n‑1 Cu n O 2n+3 (n=3,4) Method for superconducting thin films. A target material is obtained by weighing a certain amount of barium, calcium, and copper oxides or carbonates according to chemical proportions, followed by multiple grinding, pressing, and sintering processes. A suitable metal substrate with a buffer layer is selected, and (Cu,C)Ba2Ca is prepared using the prepared target material via PLD deposition technology. n‑1 Cu n O 2n+3 (n=3,4) Thin film; High-purity oxygen and carbon dioxide are introduced into the PLD coating cavity at a certain flow rate to maintain a constant gas pressure in the cavity; The distance between the target and the soft baseband is adjusted to make the distance between the feather tip and the soft baseband appropriate; After the temperature stabilizes, the thin film is deposited and grown; Under appropriate laser energy, pulse frequency and baseband temperature, a superconducting thin film with high critical temperature, high irreversible magnetic field and high critical current density is obtained.

The invention relates to the technical field of superconductors, in particular to a Tc > 140K superconductor reverse design method and system based on gradient guidance, and the method comprises the steps: obtaining superconductive data, constructing a superconductive data set, obtaining a preliminary data set, carrying out the data cleaning, obtaining a cleaned data set, constructing a superconductive representation matrix, carrying out the training to obtain a training generation model and a training diffusion model, and carrying out the mapping. Performing random disturbance addition for multiple times to obtain a disturbance addition vector, calculating disturbance gradient estimation, updating the low-dimensional potential vector, obtaining an updated potential vector, obtaining a reconstruction sample, performing optimization to obtain a reconstruction optimization sample, performing critical temperature prediction, obtaining a reconstruction temperature and an updated temperature, and calculating a temperature absolute difference value; and obtaining an update temperature sequence, extracting an initial update temperature, determining a target update temperature, and determining a target temperature in the update temperature sequence. According to the method, the design and discovery of the high-critical-temperature superconducting material can be accelerated.

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

The invention belongs to the technical field of eutectic materials, and discloses a TMBZ-TXBQ eutectic material as well as a preparation method and application thereof. The TMBZ-TXBQ eutectic material comprises an electron donor and an electron acceptor, the electron donor is N, N, N, N-tetramethyl benzidine, and the electron acceptor is a 1, 2, 4, 5-tetrahalogen p-benzoquinone compound. The TMBZ-TXBQ eutectic material disclosed by the invention can be triggered by 808nm laser with the power density of 330mW. Cm <-2 >, a large amount of heat can be quickly released, and a high temperature exceeding 400 DEG C can be provided, so that the requirement on the laser can be obviously reduced, and the cost of a trigger system can be reduced and the miniaturization of the trigger system is facilitated; the device can be very sensitively controlled by laser, and the higher critical temperature ensures the safety of the device. Meanwhile, heat release of the TMBZ-TXBQ eutectic material can be remotely controlled, and after the TMBZ-TXBQ eutectic material is wrapped by a packaging material, the TMBZ-TXBQ eutectic material can still be triggered by laser irradiated from the outside to release heat.

An integrated circuit is provided, comprising a semiconductor layer, a superconducting qubit, a dielectric layer, and at least one electrical component. The semiconductor layer comprises a transistor. The superconducting qubit comprises a capacitor, a silicon nitride layer, and layers of high-critical-temperature superconductor material. The layers of high-critical-temperature superconductor material form a Josephson junction between them. The Josephson junction is electrically coupled to the capacitor. At least a section of the silicon nitride layer is arranged between the capacitor and the Josephson junction. The dielectric layer is arranged between the semiconductor layer and the superconducting qubit. The at least one electrical component couples the superconducting qubit to the transistor.