5 results about "High critical temperature" patented technology

To provide a super-conductive device which uses a seed layer to improve a super-conductive critical temperature of a metal nitride layer.SOLUTION: A super-conductive device 100' includes: a substrate 102; an upper part seed layer 106' for forming one of a metal oxide and a metal oxynitride on the substrate; and a metal nitride super-conductive layer 108' and a capping layer 110' directly arranged on the upper seed layer. The upper seed layer is formed of a first metal, one of oxide and oxynitride, and the super-conductive layer is formed of a second metal, nitride. The first metal is aluminum and the second metal, nitride is one of niobium nitride, titanium nitride, and niobium titanium nitride.SELECTED DRAWING: Figure 4B

A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

This invention discloses the preparation of (Cu,C)Ba2Ca on a metal soft substrate. n‑1 Cu n O 2n+3 (n=3,4) Method for superconducting thin films. A target material is obtained by weighing a certain amount of barium, calcium, and copper oxides or carbonates according to chemical proportions, followed by multiple grinding, pressing, and sintering processes. A suitable metal substrate with a buffer layer is selected, and (Cu,C)Ba2Ca is prepared using the prepared target material via PLD deposition technology. n‑1 Cu n O 2n+3 (n=3,4) Thin film; High-purity oxygen and carbon dioxide are introduced into the PLD coating cavity at a certain flow rate to maintain a constant gas pressure in the cavity; The distance between the target and the soft baseband is adjusted to make the distance between the feather tip and the soft baseband appropriate; After the temperature stabilizes, the thin film is deposited and grown; Under appropriate laser energy, pulse frequency and baseband temperature, a superconducting thin film with high critical temperature, high irreversible magnetic field and high critical current density is obtained.

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

An integrated circuit is provided, comprising a semiconductor layer, a superconducting qubit, a dielectric layer, and at least one electrical component. The semiconductor layer comprises a transistor. The superconducting qubit comprises a capacitor, a silicon nitride layer, and layers of high-critical-temperature superconductor material. The layers of high-critical-temperature superconductor material form a Josephson junction between them. The Josephson junction is electrically coupled to the capacitor. At least a section of the silicon nitride layer is arranged between the capacitor and the Josephson junction. The dielectric layer is arranged between the semiconductor layer and the superconducting qubit. The at least one electrical component couples the superconducting qubit to the transistor.