Aluminum nitride monocrystal film and method of preparing the same

A technology of single crystal thin film and aluminum nitride, which is applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., and can solve problems such as many defects in the film and difficulty in obtaining high-quality single crystal thin film

Inactive Publication Date: 2004-03-17
NANJING UNIV
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Problems solved by technology

In these heterostructures, due to the lattice mismatch between the aluminum nitride film and the above-mentioned single crystal substrate, the aluminum nitride film is often grown in a three-d

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  • Aluminum nitride monocrystal film and method of preparing the same
  • Aluminum nitride monocrystal film and method of preparing the same
  • Aluminum nitride monocrystal film and method of preparing the same

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[0028] An aluminum nitride film on a magnesium oxide single crystal substrate includes a magnesium oxide single crystal substrate substrate 2 and an aluminum nitride film 1. The crystal lattice structure of the magnesium oxide single crystal substrate 2 is cubic crystal, and the lattice parameter α MgO =4.201; The crystal of aluminum nitride has a hexagonal structure, and the lattice parameter is α AlN = 3lll, c AlN =4.979. Although the lattice structures of aluminum nitride and magnesium oxide are not the same, the [101] crystal orientation of the aluminum nitride film 1 and the [001] crystal orientation of the magnesium oxide single crystal substrate 2 have a good match.

[0029] A method for growing an aluminum nitride film 1 on a magnesium oxide single crystal substrate 2 by using a radio frequency magnetron sputtering method, and the steps are as follows:

[0030] (a) Cleaning of magnesium oxide single crystal substrate: first put the magnesium oxide single crystal substra...

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Abstract

The present invention discloses one kind of aluminum nitride film on monocrystalline magnesia substrate and its preparation process. Via RE magnetically controlled sputtering process, aluminum nitride film is grown on unheated monocrystalline magnesia substrate, and the film has excellent matching with the monocrystalline substrate and high quality. The present invention is applied widely in the preparation and development of insulating layer and deactivated layer for high temperature, high frequency, great power and short wavelength photoelectronic device, pressure sensor, heat radiance sensor, high frequency acoustic surface wave device and electronic device in microelectronic and superconductive electronic fields.

Description

1. Technical field [0001] The invention belongs to the field of electronic materials, in particular to an aluminum nitride film on a magnesium oxide single crystal substrate and a preparation method thereof. 2. Background technology [0002] In recent years, the rapid development of nitride semiconductor technology, especially the commercialization of blue and green light-emitting diodes, as well as the research of short-wavelength semiconductor lasers and high-power high-temperature microwave devices, have greatly promoted the research of III-nitrides. . Aluminum nitride (AlN) (6.2eV) material with wide energy gap and direct energy band has high decomposition temperature, good chemical stability, fast sound propagation speed, excellent thermal piezoelectric and dielectric properties, high insulation, thermal conductivity and mechanical resistance Good friction performance and other characteristics, it is an excellent material for high temperature, high frequency, high powe...

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Application Information

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IPC IPC(8): C23C14/08C23C14/35H01L21/00
Inventor 康琳吴培亨蔡卫星施建荣陈亚军
Owner NANJING UNIV
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