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Aluminium nitride monocrystal film and method of preparing the same

A single crystal thin film, aluminum nitride technology, applied in semiconductor/solid state device manufacturing, ion implantation plating, coating and other directions, can solve the problems of difficulty in obtaining high quality single crystal thin films and many thin film defects

Inactive Publication Date: 2005-05-18
NANJING UNIV
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  • Application Information

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Problems solved by technology

In these heterostructures, due to the lattice mismatch between the aluminum nitride film and the above-mentioned single crystal substrate, the aluminum nitride film is often grown in a three-dimensional way, resulting in the formation of an island structure with many defects in the film, making it difficult to obtain a single crystal structure. high quality single crystal thin film

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  • Aluminium nitride monocrystal film and method of preparing the same
  • Aluminium nitride monocrystal film and method of preparing the same
  • Aluminium nitride monocrystal film and method of preparing the same

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Embodiment Construction

[0028] An aluminum nitride thin film on a magnesium oxide single crystal substrate, comprising a magnesium oxide single crystal substrate 2 and an aluminum nitride thin film 1 as a substrate, the lattice structure of the magnesium oxide single crystal substrate 2 is a cubic crystal, and the crystal lattice parameter a MgO =4.201 Å; the crystal of aluminum nitride is a hexagonal structure, and the lattice parameter is a AlN =3.111 Å, c AlN = 4.979 Å. Although the lattice structures of aluminum nitride and magnesium oxide are different, the [101] crystal orientation of the aluminum nitride film 1 and the [001] crystal orientation of the magnesium oxide single crystal substrate 2 have a good match.

[0029] A method for growing an aluminum nitride thin film 1 on a magnesium oxide single crystal substrate 2 by radio frequency magnetron sputtering, the steps are:

[0030] (a) Cleaning of the magnesium oxide single crystal substrate: first put the magnesium oxide single crystal s...

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Abstract

The invention discloses an aluminum nitride thin film on a magnesium oxide single crystal substrate and a preparation method thereof, which uses a radio frequency magnetron sputtering method to grow aluminum nitride on a magnesium oxide single crystal substrate without heating the substrate table The thin film has good lattice matching between the thin film and the magnesium oxide single crystal substrate, and the thin film has high quality. The invention is widely used in the preparation of high-temperature, high-frequency, high-power and short-wavelength optoelectronic devices, pressure sensors and thermal radiation sensors, high-frequency surface acoustic wave devices, and insulating layers and passivation layers of electronic devices in the fields of microelectronics and superconducting electronics and research.

Description

1. Technical field [0001] The invention belongs to the field of electronic materials, in particular to an aluminum nitride film on a magnesium oxide single crystal substrate and a preparation method thereof. 2. Background technology [0002] In recent years, the rapid development of nitride semiconductor technology, especially the commercialization of blue and green light-emitting diodes, as well as the research of short-wavelength semiconductor lasers and high-power high-temperature microwave devices, have greatly promoted the research of III-nitrides. . Aluminum nitride (AlN) (6.2eV) material with wide energy gap and direct energy band has high decomposition temperature, good chemical stability, fast sound propagation speed, excellent thermal piezoelectric and dielectric properties, high insulation, thermal conductivity and mechanical resistance Good friction performance and other characteristics, it is an excellent material for high temperature, high frequency, high powe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35H01L21/00
Inventor 康琳吴培亨蔡卫星施建荣陈亚军
Owner NANJING UNIV
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