A method for preparing high concentration gradient azo single crystal conductive film by diffusion method

A conductive thin film, high-concentration technology, used in single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as unfavorable large-scale industrialization, poor film formation quality, slow deposition speed, etc., to achieve uniform gradient, conductive The effect of excellent performance and easy process control

Inactive Publication Date: 2017-07-28
LIAONING UNIVERSITY OF TECHNOLOGY
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The deposition speed of the pulsed laser deposition method is slow, the film quality is poor and requires special equipment and high vacuum, the production cost is high, and it is not conducive to large-scale industrialization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing high concentration gradient azo single crystal conductive film by diffusion method
  • A method for preparing high concentration gradient azo single crystal conductive film by diffusion method
  • A method for preparing high concentration gradient azo single crystal conductive film by diffusion method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1) cleaning

[0032] To clean the monocrystalline silicon substrate, first ultrasonically clean it in acetone for 10 minutes, then clean it in absolute ethanol for 10 minutes, and finally rinse it with deionized water and dry it;

[0033] 2) Target and substrate installation

[0034] The targets used for sputtering are ZnO (purity 99.99%) and Al (purity 99.999%). The zinc oxide target is installed on the radio frequency target of the magnetron sputtering equipment, and the aluminum target is installed on the DC target of the magnetron sputtering equipment. At the same time, install a single crystal silicon substrate on the sample stage at the top of the vacuum chamber of the magnetron sputtering equipment, pay attention to ensure the cleanliness of the substrate surface during the loading process;

[0035] 3) Sputtering deposition

[0036] The gradient AZO film was prepared at room temperature by magnetron sputtering. First, the vacuum chamber was evacuated to a high ...

Embodiment 2

[0040] 1) cleaning

[0041] To clean the monocrystalline silicon substrate, first ultrasonically clean it in acetone for 15 minutes, then clean it in absolute ethanol for 15 minutes, and finally rinse it with deionized water and dry it;

[0042] 2) Target and substrate installation

[0043] The targets used for sputtering are ZnO (purity 99.99%) and Al (purity 99.999%). The zinc oxide target is installed on the radio frequency target of the magnetron sputtering equipment, and the aluminum target is installed on the DC target of the magnetron sputtering equipment. At the same time, install a single crystal silicon substrate on the sample stage at the top of the vacuum chamber of the magnetron sputtering equipment, pay attention to ensure the cleanliness of the substrate surface during the loading process;

[0044] 3) Sputtering deposition

[0045] The gradient AZO film was prepared at room temperature by magnetron sputtering. First, the vacuum chamber was evacuated to a high ...

Embodiment 3

[0049] 1) cleaning

[0050] To clean the monocrystalline silicon substrate, first ultrasonically clean it in acetone for 20 minutes, then clean it in absolute ethanol for 20 minutes, and finally rinse it with deionized water and dry it;

[0051] 2) Target and substrate installation

[0052] The targets used for sputtering are ZnO (purity 99.99%) and Al (purity 99.999%). The zinc oxide target is installed on the radio frequency target of the magnetron sputtering equipment, and the aluminum target is installed on the DC target of the magnetron sputtering equipment. At the same time, install a single crystal silicon substrate on the sample stage at the top of the vacuum chamber of the magnetron sputtering equipment, pay attention to ensure the cleanliness of the substrate surface during the loading process;

[0053] 3) Sputtering deposition

[0054] The gradient AZO film was prepared at room temperature by magnetron sputtering. First, the vacuum chamber was evacuated to a high ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
purityaaaaaaaaaa
Login to view more

Abstract

A method for preparing a high-concentration gradient AZO single-crystal conductive film by a diffusion method. Single-crystal silicon is used as a substrate, and the target materials used are ZnO targets and Al targets. Sputtering deposition of AZO layer and ZnO layer is carried out. The power of the target remains unchanged during sputtering deposition. The Al element deposition is controlled by regularly adjusting the Al target baffle. Each time the aluminum target baffle is opened, the ZnO target is sputtered separately. The time is increasing, after the ZnO target is sputtered alone, the aluminum baffle is opened, and the Al target and the ZnO target are co-sputtered. After the deposition is completed, annealing is performed to obtain a gradient AZO film. The advantages are: simple process, low cost, easy process control, gradient AZO single crystal film prepared by diffusion method, large gradient change of gradient doping concentration, uniform gradient, high crystal quality, good single crystal performance, smooth film surface, and excellent electrical conductivity , suitable as a passivation layer for thin film solar cells.

Description

technical field [0001] The invention belongs to the field of preparation of transparent conductive oxide films, in particular to a method for preparing high-concentration gradient AZO single-crystal conductive films by a diffusion method. Background technique [0002] With the development of semiconductor, computer, solar energy and other industries, a new functional material—transparent conductive oxide film (TCO film for short) has emerged and developed. Among them, aluminum-doped zinc oxide (AZO) transparent conductive film has become the best transparent conductive film material so far because of its abundant natural resources, simple production process, low cost, non-toxicity and stable performance, especially the gradient AZO single crystal film because of its With the advantages of no stress on the interface and fast electron transmission, it has important application prospects in solar cells, liquid crystal displays, and thermal mirrors. Since the components of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08C30B29/16
Inventor 唐立丹王冰赵斌齐锦刚彭淑静
Owner LIAONING UNIVERSITY OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap