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A method for preparing high-concentration gradient azo single-crystal conductive thin films by direct current/radio frequency co-sputtering

A conductive thin film and co-sputtering technology, which is applied in the field of preparation of bright conductive oxide thin films, can solve the problems of unfavorable large-scale industrialization, poor film quality, and high production costs, and achieve excellent crystal silicon passivation performance, uniform gradient, and low cost. cheap effect

Inactive Publication Date: 2017-09-26
LIAONING UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The deposition speed of the pulsed laser deposition method is slow, the film quality is poor and requires special equipment and high vacuum, the production cost is high, and it is not conducive to large-scale industrialization

Method used

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  • A method for preparing high-concentration gradient azo single-crystal conductive thin films by direct current/radio frequency co-sputtering
  • A method for preparing high-concentration gradient azo single-crystal conductive thin films by direct current/radio frequency co-sputtering
  • A method for preparing high-concentration gradient azo single-crystal conductive thin films by direct current/radio frequency co-sputtering

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 1) cleaning

[0033] Using monocrystalline silicon as the substrate, clean the monocrystalline silicon substrate by ultrasonically cleaning it in acetone for 10 minutes, then cleaning it in absolute ethanol for 10 minutes, and finally rinsing it with deionized water and drying it;

[0034] 2) Target and substrate installation

[0035] The targets used for sputtering are ZnO target (99.99% purity) and Al target (99.999% purity), the zinc oxide target is installed on the radio frequency target of the magnetron sputtering equipment, and the aluminum target is installed on the magnetron sputtering equipment On the DC target, install the monocrystalline silicon substrate on the sample stage at the top of the vacuum chamber of the magnetron sputtering equipment at the same time. During the loading process of loading the monocrystalline silicon substrate on the top of the vacuum chamber, ensure the cleanliness of the substrate surface;

[0036] 3) Sputtering deposition

[00...

Embodiment 2

[0039] 1) cleaning

[0040] Using monocrystalline silicon as the substrate, clean the monocrystalline silicon substrate, first ultrasonic cleaning in acetone for 15 minutes, then cleaning in absolute ethanol for 15 minutes, finally rinsing with deionized water, and drying;

[0041] 2) Target and substrate installation

[0042] The targets used for sputtering are ZnO target (99.99% purity) and Al target (99.999% purity), the zinc oxide target is installed on the radio frequency target of the magnetron sputtering equipment, and the aluminum target is installed on the magnetron sputtering equipment On the DC target, install the monocrystalline silicon substrate on the sample stage at the top of the vacuum chamber of the magnetron sputtering equipment at the same time. During the loading process of loading the monocrystalline silicon substrate on the top of the vacuum chamber, ensure the cleanliness of the substrate surface;

[0043] 3) Sputtering deposition

[0044] Gradient AZ...

Embodiment 3

[0046] 1) cleaning

[0047] Using monocrystalline silicon as the substrate, clean the monocrystalline silicon substrate by ultrasonically cleaning it in acetone for 20 minutes, then cleaning it in absolute ethanol for 20 minutes, and finally rinsing it with deionized water and drying it;

[0048] 2) Target and substrate installation

[0049] The targets used for sputtering are ZnO target (99.99% purity) and Al target (99.999% purity), the zinc oxide target is installed on the radio frequency target of the magnetron sputtering equipment, and the aluminum target is installed on the magnetron sputtering equipment On the DC target, install the monocrystalline silicon substrate on the sample stage at the top of the vacuum chamber of the magnetron sputtering equipment at the same time. During the loading process of loading the monocrystalline silicon substrate on the top of the vacuum chamber, ensure the cleanliness of the substrate surface;

[0050] 3) Sputtering deposition

[00...

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Abstract

A method for preparing high-concentration gradient AZO single-crystal conductive films by DC / RF co-sputtering. The targets used for sputtering are ZnO targets and Al targets. The zinc oxide targets are installed on the radio-frequency targets of magnetron sputtering equipment. The target is installed on the DC target of the magnetron sputtering equipment, and the single crystal silicon substrate is installed on the sample stage at the top of the vacuum chamber of the magnetron sputtering equipment; the gradient AZO film is prepared by the co-sputtering method, and the initial doping amount of Al The power of the Al target is 40% to 60%, and the power of the Al target is constantly changing during the entire coating process. As the thickness of the film deposited by sputtering increases, the power of the Al target decreases, and the doping amount of Al decreases to 3%. , to prepare gradient AZO films. The method has the advantages of uniform film gradient, good single crystal orientation, excellent optical and electrical properties, low cost and suitable for large-scale production.

Description

technical field [0001] The invention belongs to the field of preparation of bright conductive oxide thin films, in particular to a method for preparing high-concentration gradient AZO single crystal conductive thin films by direct current / radio frequency co-sputtering. Background technique [0002] The energy used by human beings in life and production mainly comes from fossil fuels such as coal, oil, and natural gas. With the development of society, there is an increasing demand for energy, the gradual depletion of fossil fuels such as petroleum, and the increasingly serious problems of environmental pollution. Solar energy is widely distributed, inexhaustible, and inexhaustible. The environment is non-polluting, so its development and utilization have gradually attracted people's attention. [0003] In the photovoltaic industry, crystalline silicon solar cells account for 80% of the photovoltaic market, occupying a dominant position in the photovoltaic market. However, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/54
Inventor 唐立丹王冰赵斌齐锦刚彭淑静
Owner LIAONING UNIVERSITY OF TECHNOLOGY
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