Method for preparing high-concentration gradient AZO monocrystalline conductive thin film by direct current/radio frequency co-sputtering process

A conductive thin film and co-sputtering technology, which is applied in the field of preparation of bright conductive oxide thin films, can solve the problems of unfavorable large-scale industrialization, high production cost, and slow deposition speed, and achieve excellent crystal silicon passivation performance, low cost, and process easily controlled effects

Inactive Publication Date: 2015-12-09
LIAONING UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The deposition speed of the pulsed laser deposition method is slow, the film quality is poor and requires special equipment and high vacuum, the production cost is high, and it is not conducive to large-scale industrialization

Method used

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  • Method for preparing high-concentration gradient AZO monocrystalline conductive thin film by direct current/radio frequency co-sputtering process
  • Method for preparing high-concentration gradient AZO monocrystalline conductive thin film by direct current/radio frequency co-sputtering process
  • Method for preparing high-concentration gradient AZO monocrystalline conductive thin film by direct current/radio frequency co-sputtering process

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 1) cleaning

[0033] Using monocrystalline silicon as the substrate, clean the monocrystalline silicon substrate by ultrasonically cleaning it in acetone for 10 minutes, then cleaning it in absolute ethanol for 10 minutes, and finally rinsing it with deionized water and drying it;

[0034] 2) Target and substrate installation

[0035] The targets used for sputtering are ZnO target (99.99% purity) and Al target (99.999% purity), the zinc oxide target is installed on the radio frequency target of the magnetron sputtering equipment, and the aluminum target is installed on the magnetron sputtering equipment On the DC target, install the monocrystalline silicon substrate on the sample stage at the top of the vacuum chamber of the magnetron sputtering equipment at the same time. During the loading process of loading the monocrystalline silicon substrate on the top of the vacuum chamber, ensure the cleanliness of the substrate surface;

[0036] 3) Sputtering deposition

[00...

Embodiment 2

[0039] 1) cleaning

[0040] Using monocrystalline silicon as the substrate, clean the monocrystalline silicon substrate, first ultrasonic cleaning in acetone for 15 minutes, then cleaning in absolute ethanol for 15 minutes, finally rinsing with deionized water, and drying;

[0041] 2) Target and substrate installation

[0042] The targets used for sputtering are ZnO target (99.99% purity) and Al target (99.999% purity), the zinc oxide target is installed on the radio frequency target of the magnetron sputtering equipment, and the aluminum target is installed on the magnetron sputtering equipment On the DC target, install the monocrystalline silicon substrate on the sample stage at the top of the vacuum chamber of the magnetron sputtering equipment at the same time. During the loading process of loading the monocrystalline silicon substrate on the top of the vacuum chamber, ensure the cleanliness of the substrate surface;

[0043] 3) Sputtering deposition

[0044] Gradient AZ...

Embodiment 3

[0046] 1) cleaning

[0047] Using monocrystalline silicon as the substrate, clean the monocrystalline silicon substrate by ultrasonically cleaning it in acetone for 20 minutes, then cleaning it in absolute ethanol for 20 minutes, and finally rinsing it with deionized water and drying it;

[0048] 2) Target and substrate installation

[0049] The targets used for sputtering are ZnO target (99.99% purity) and Al target (99.999% purity), the zinc oxide target is installed on the radio frequency target of the magnetron sputtering equipment, and the aluminum target is installed on the magnetron sputtering equipment On the DC target, install the monocrystalline silicon substrate on the sample stage at the top of the vacuum chamber of the magnetron sputtering equipment at the same time. During the loading process of loading the monocrystalline silicon substrate on the top of the vacuum chamber, ensure the cleanliness of the substrate surface;

[0050] 3) Sputtering deposition

[00...

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Abstract

The invention provides a method for preparing a high-concentration gradient AZO monocrystalline conductive thin film by a direct current / radio frequency co-sputtering process. Target materials used by sputtering comprise a ZnO target and an Al target, the ZnO target is mounted on a radio frequency target of magnetron sputtering equipment, the Al target is mounted on a direct current target of the magnetron sputtering equipment, and meanwhile, a monocrystalline silicon substrate is mounted on a sample table at the top of a vacuum chamber of the magnetron sputtering equipment. The gradient AZO thin film is prepared by the co-sputtering process. The initial doping amount of Al is 40-60%. The power of the Al target material continuously varies in the whole film coating process, the variation rule is that the power of the Al target material decreases with the continuous increase of the thickness of the sputtered and deposited thin film, and the gradient AZO thin film is prepared when the doping amount of the Al is reduced to 3%. The method has the advantages that the thin film prepared by the method is even in gradient and great in monocrystalline orientation and has excellent photoelectric performance; and meanwhile, the method is low in cost and suitable for technically massive production.

Description

technical field [0001] The invention belongs to the field of preparation of bright conductive oxide thin films, in particular to a method for preparing high-concentration gradient AZO single crystal conductive thin films by direct current / radio frequency co-sputtering. Background technique [0002] The energy used by human beings in life and production mainly comes from fossil fuels such as coal, oil, and natural gas. With the development of society, there is an increasing demand for energy, the gradual depletion of fossil fuels such as petroleum, and the increasingly serious problems of environmental pollution. Solar energy is widely distributed, inexhaustible, and inexhaustible. The environment is non-polluting, so its development and utilization have gradually attracted people's attention. [0003] In the photovoltaic industry, crystalline silicon solar cells account for 80% of the photovoltaic market, occupying a dominant position in the photovoltaic market. However, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/54
Inventor 唐立丹王冰赵斌齐锦刚彭淑静
Owner LIAONING UNIVERSITY OF TECHNOLOGY
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