21 results about "Microwave electronics" patented technology

The present invention discloses a method for acquiring the generated posture of field-emission electrons in a microwave electron gun, belonging to the technical field of electronic components. The positioning method comprises: measuring the actual target posture of the field-emission electrons on a fluorescent screen; the field-emission electrons are generated and emitted inside the microwave electron gun, and are focused and projected onto the fluorescent screen via a preset magnetic field path; establishing a mapping relationship between the initial possible postures of the field-emission electrons generated inside the microwave electron gun and the target reference posture when they arrive at the fluorescent screen; using each of the initial possible postures of the field-emission electrons and the mapping relationship, obtaining the target reference posture of each field-emission electron when it arrives at the fluorescent screen; and selecting the most accurate generated posture of the field-emission electrons from multiple initial possible postures, thereby accurately determining the specific position and emission phase of the field-emission current when it is generated inside the microwave electron gun.

A method for preparing a box-shaped, indirectly heated phase-change switching device belongs to the technical fields of microwave electronics and microwave switching devices. The present invention provides a method for preparing a box-shaped, indirectly heated phase-change switching device. This method utilizes photolithography and magnetron sputtering to form a four-end, indirect heating device, effectively achieving full enclosure of the phase-change layer by the heating material. When the heating layer material generates Joule heat under the control of an electric pulse, the heating layer material heats up rapidly and evenly, compared to conventional phase-change switching devices. This significantly shortens the information processing cycle time of the phase-change switch, making the operating state of the phase-change material more stable and enabling rapid state switching.

FIELD: microwave electronic devices.SUBSTANCE: in a low-noise microwave field-effect transistor on a semiconductor heterostructure, at least three quantum barrier layers of i-AlAs are additionally made, each with a thickness of 2-6 atomic monolayers, wherein each of said quantum barrier layers is located between the actual channel layer of InyGa1-yAs or a group of layers of the latter and the gate, wherein at least one quantum barrier layer is located between the doped layer and, or δ n-layer and the actual channel layer of InyGa1-yAs or a group of layers of the latter and at least one quantum barrier layer is located between the doped layer and, orδ n-layer and a gate, wherein the quantum barrier layers are separated from each other by at least one layer of narrow-band material AlxGa1-xAs, with a molar fraction of the chemical element Al x less than 0.4, with a thickness equal to or greater than 2 atomic monolayers, or a layer of GaAs, with a thickness equal to or greater than 2 atomic monolayers, between the actual channel layer InyGa1-yAs or a group of layers of the latter and the buffer layer, layers of GaAs, transition layers, quantum barrier layers i-AlAs, barrier layers, and layers doped with an acceptor impurity are made, on the last layer of the group of barrier layers, quantum barrier layers i-AlAs, barrier, transition and contact layers are made in a given sequence.EFFECT: increase in the gain factor and a reduction in the noise figure.1 cl, 1 dwg, 1 tbl

The invention discloses a whole-process modeling method and system for a microwave compound semiconductor device, and relates to the technical field of microwave electronic devices. The method comprises six steps of newly building a device model, importing measured data, extracting parameters of a small-signal model, extracting parameters of a nonlinear current model, extracting parameters of a nonlinear capacitance model and globally verifying the model, so that one-stop parameter extraction covering the whole process is realized, and an analysis and optimization algorithm is integrated to improve the parameter precision; through global verification of five dimensions of multi-bias S parameters, current characteristics, capacitance characteristics, power scanning characteristics and a load traction circle diagram, commercial microwave simulation software is combined, and a Verilog A model capable of being directly loaded is output. According to the method, the problems that in the prior art, the process is not coherent, and verification dimensions are insufficient are solved, the modeling efficiency and the model precision are improved, and accurate model support is provided for high-frequency and high-power electronic devices.

The invention provides a single-pole single-throw phase change switch based on a microstrip transmission line structure, and relates to the technical field of radio frequency microwave electronics. The single-pole single-throw phase change switch based on the microstrip transmission line structure comprises two microstrip metal transmission lines, a phase change functional area is fixedly connected between the two microstrip metal transmission lines, and heating layer electrodes are fixedly connected to the two sides of the phase change functional area. And the bottoms of the two microstrip metal transmission lines, the phase change functional area and the heating layer electrode are jointly and fixedly provided with a substrate. Through the innovative multi-layer stacked structure design, the phase change function layer and the microstrip metal transmission line are integrated on the same substrate, and a high-performance radio frequency switch function is realized. According to the switch, crystalline / amorphous conversion of the phase change functional layer is accurately controlled in a mode of cooperative work of the heater and the insulating heat conduction layer, and the switch has the excellent characteristics of ultra wide band, low insertion loss, high isolation and the like. Compared with a traditional switch, the switch is higher in response speed and lower in power consumption.

The invention belongs to the technical field of microwave electronics and electric vacuum, and particularly relates to a groove loading folded waveguide slow-wave structure with a vertical electronic channel, which comprises a shell, a slow-wave structure is arranged in the shell, and the slow-wave structure is formed by connecting a series of arc bent waveguides and straight waveguides end to end. The waveguide is equivalent to a folded waveguide formed by bending a rectangular waveguide in a U shape; an expanding groove which penetrates through the straight waveguide part and is self-adaptive along with bending deformation is formed in the middle line of the folded waveguide wall, and the expanding groove of the straight waveguide part is communicated with the folded waveguide cavity to form an electron beam channel. According to the invention, the expansion groove and the folded waveguide are conformally arranged, so that the maximum expansion of the size of an electron beam channel is realized, the electron beam with larger size can be borne, and the working power is improved. A coupling impedance analysis result shows that the folded waveguide slow wave structure has higher coupling impedance and can effectively improve gain and output power.

The utility model discloses a millimeter wave secondary down-conversion module, which relates to the technical field of microwave electronics, adopts a double-balanced mixer to integrate frequency conversion, filtering amplification and power division monitoring functions in the module, and compared with the traditional scheme, the millimeter wave secondary down-conversion module has the advantages that the volume is greatly reduced, and the cost is reduced. The shunt signals of the power divider are subjected to frequency conversion dynamic adaptation and intelligent AGC closed-loop control through the detection module, so that the technical bottlenecks of the traditional down-conversion module in volume, frequency band stiffness and reliability are overcome, and meanwhile, the rapid deployment capability of one module and multiple scenes is realized; and a high-performance and low-cost millimeter wave receiving solution is provided for 6G communication, a low-orbit satellite terminal and an intelligent radar system.

The application provides a microwave electron gun, a method for generating an electron cyclotron resonance region and an ion implanter, wherein the microwave electron gun comprises: a plasma chamber; the plasma chamber has a first end and a second end; the first end is used for passing in microwaves; the second end is used for passing in gas; an escape region is arranged on the sidewall of the plasma chamber, and the particle escape efficiency of the escape region gradually decreases from the first end to the second end, wherein the particles include electrons and / or gas molecules / atoms. The microwave electron gun provided by the technical scheme reduces the leakage degree of the gas in the plasma chamber and improves the working performance of the microwave electron gun.

The invention provides a glass fiber composition. The glass fiber composition comprises the following components: 36.0-46.0 wt% of SiO2; the content of Al2O3 is 0.5 to 6.0 percent by weight; 15.0 to 30.0 wt% of TiO2 (titanium dioxide); baO: 20.0 wt% to 35.0 wt%; r2O3: 0.5 to 15.0 wt%; 0 to 5.0 wt% of CaO; wherein R < 2 > O < 3 > is at least one of La2O3 and Y2O3. The specific raw materials are combined with a specific ratio, so that the final glass fiber composition has the dielectric constant of more than 9.5 and the dielectric loss of less than 0.0044 at the high frequency of 10GHz, and is beneficial to application in the fields of high-frequency communication, microwave electronics and the like.

The present invention discloses a synchrotron radiation method and device for simultaneously detecting the DC and AC components of a spin current, and relates to the field of photoelectric detection technology. A double-layer film sample to be tested is placed on an electrical test sample platform; a high-frequency microwave signal obtained by processing a microwave clock signal through a microwave electronics part is input into the electrical test sample platform to excite the magnetic layer of the double-layer film sample to be tested to generate GHz spin precession; a synchrotron radiation X-ray pulse is incident on the double-layer film sample to be tested to detect the instantaneous signal of the spin precession of the ferromagnetic layer in the double-layer film sample to be tested and the instantaneous signal of the spin precession of the non-magnetic layer driven by the AC spin current pumped from the ferromagnetic layer; at the same time, an electrical response test system is used to measure the DC voltage signal converted by the non-magnetic layer in the magnetic double-layer sample to be tested through the inverse spin Hall effect. The synchrotron radiation method and device can simultaneously detect the DC component and the GHz AC component of the spin current.

This invention discloses a full-process modeling method and system for microwave compound semiconductor devices, belonging to the field of microwave electronic device technology. The method includes six steps: device model creation, measured data import, small-signal model parameter extraction, nonlinear current model parameter extraction, nonlinear capacitance model parameter extraction, and global model verification. It achieves one-stop parameter extraction covering the entire process, integrating analytical and optimization algorithms to improve parameter accuracy. Global verification is performed across five dimensions: multi-bias S-parameters, current characteristics, capacitance characteristics, power sweep characteristics, and load pull circle diagram. Combined with commercial microwave simulation software, a directly loadable Verilog A model is output. This invention solves the problems of disjointed processes and insufficient verification dimensions in existing technologies, improving modeling efficiency and accuracy, and providing precise model support for high-frequency, high-power electronic devices.

Miniature Flash Radiotherapy Equipment The present invention discloses miniature Flash radiotherapy equipment, comprising: a 3D scanning unit (10) used to obtain 3D data of a target area, said 3D data being used to determine the energy of an electron beam and to determine a target scanning trajectory in the target region using the electron beam; a microwave electron gun (20) used to generate an electron beam current having an energy and dose adapted to the 3D data; and a beam transmission unit (30) used to transmit the electron beam generated by the microwave electron gun (20) and enable the electron beam to perform the scan in the target area along the target trajectory. Figure to be published with the abbreviation: Figure 2

The invention discloses a NiCuZn microwave ferrite material with high spin wave line width and a preparation method, relates to the technical field of electronic information materials and microwave electronics, and comprises a NiCuZn microwave ferrite material with high performance through a multi-ion synergistic effect method, and by adding In < 3 + > ions and Ga < 3 + > ions capable of reducing ferromagnetic resonance line width, the high-performance NiCuZn microwave ferrite material with high spin wave line width can be obtained. The NiCuZn microwave ferrite material with the high spin wave line width is obtained by adding a high-speed relaxation ion Ho < 3 + > to replace Zn < 2 + > ions on the A site of spinel, adding a rapid relaxation ion Ho < 3 + > to replace Ni < 2 + > ions on the B site of spinel, and then replacing trivalent Fe < 3 + > ions with Mn < 2 + > ions to regulate and control element and electricity price balance in the ferrite and obtain the NiCuZn microwave ferrite material with the high spin wave line width. The material can meet the power bearing capacity of a microwave device under high power, and the device performance is excellent.

This utility model relates to the field of microwave electronics technology, specifically a temperature compensation circuit and a bandpass filter, comprising a composite capacitor including a negative temperature coefficient (NTC) capacitor and a positive temperature coefficient (PTC) capacitor. The first terminals of the NTC capacitor and the PTC capacitor are connected together to a first port; the second terminals of the NTC capacitor and the PTC capacitor are connected together to a second port. By connecting the NTC capacitor and the PTC capacitor, which have opposite temperature characteristics, in parallel, a composite capacitor unit is formed. When the temperature changes, the capacitance of the NTC capacitor decreases, while the capacitance of the PTC capacitor increases or remains stable within a specific temperature range. The opposite trends of these two changes result in a total equivalent capacitance change that is much smaller than that of any single capacitor, directly compensating for the temperature drift of the lumped capacitor itself and reducing the impact of temperature on the filter's center frequency.

The invention relates to the technical field of radio frequency and microwave electronics, and discloses a high-efficiency high-linearity dual-frequency power amplifier, which comprises an input duplexer, a high-frequency power amplifier, a low-frequency power amplifier, an analog voltage source, a power supply and an output duplexer, two input ends of the input duplexer are connected with a radio frequency input end, and two output ends of the input duplexer are respectively connected with an input end of the high-frequency power amplifier and an input end of the low-frequency power amplifier; the output end of the high-frequency power amplifier and the output end of the low-frequency power amplifier are respectively connected with two input ends of the output duplexer; two output ends of the output duplexer are connected with the radio frequency output end; the analog voltage source is connected with the bias voltage end of the high-frequency power amplifier and the bias voltage end of the low-frequency power amplifier. The power supply is connected with the power supply end of the high-frequency power amplifier and the power supply end of the low-frequency power amplifier. According to the invention, high power additional efficiency and high linearity can be realized at the same time under double frequency bands.

The invention provides a high-suppression strip line filter bank based on a multilayer printed board, which belongs to the technical field of microwave electronic products and comprises a main cavity, a printed board arranged in the main cavity, an upper cover plate welded at the upper end of the main cavity and a lower cover plate welded at the lower end of the main cavity. The printed board comprises eight double-cascaded high-suppression strip line filters, a microstrip line, a radio frequency device, a power supply device and a plurality of strip line-microstrip transition structures, wherein the microstrip line, the radio frequency device and the power supply device are arranged on the top layer of the printed board, the plurality of strip line-microstrip transition structures are used for radio frequency signal transmission between the strip line filters and the microstrip line, and each strip line filter is a two-stage 9-order strip line interdigital filter. According to the filter bank, two stages of 9-order interdigital filters are directly cascaded, and structures such as an attenuator are not added, so that all the filters are ensured to be positioned on a strip line layer, and the size is greatly reduced.

The application relates to the field of radio frequency and microwave electronic technology and discloses a high-efficiency high-linearity dual-frequency power amplifier which comprises an input duplexer, a high-frequency power amplifier, a low-frequency power amplifier, an analog voltage source, a power supply and an output duplexer; two input ends of the input duplexer are connected with a radio frequency input end; two output ends of the input duplexer are connected with an input end of the high-frequency power amplifier and an input end of the low-frequency power amplifier respectively; an output end of the high-frequency power amplifier and an output end of the low-frequency power amplifier are connected with two input ends of the output duplexer respectively; two output ends of the output duplexer are connected with a radio frequency output end; the analog voltage source is connected with a bias voltage end of the high-frequency power amplifier and a bias voltage end of the low-frequency power amplifier respectively; and the power supply is connected with a power supply end of the high-frequency power amplifier and a power supply end of the low-frequency power amplifier respectively. The application can realize high power additional efficiency and high linearity simultaneously under dual frequency bands.

FIELD: glass ceramics.SUBSTANCE: low-temperature glass-ceramic material for microwave electronics is claimed, containing a low-temperature crystallisable glass based on oxides of chemical elements – aluminium (Al2O3), silicon (SiO2), boron (B2O3), calcium (CaO), magnesium (MgO), strontium (SrO), copper (Cu2O), zirconium (ZrO), zinc (ZnO) and alumina ceramics (Al2O3) in a given ratio, characterised in that the low-temperature crystallisable glass contains the mentioned components in the following ratio, respectively, mas.%: aluminium oxide (Al2O3) 14.55-15.15; silicon oxide (SiO2) 25.56-28.51; boron oxide (B2O3) 16.72-19.66; calcium oxide (CaO) 19.66-23.60; magnesium oxide (MgO) 4.13-5.89; strontium oxide (SrO) 1.97-2.95; copper oxide (Cu2O) 0.49-0.99; zirconium oxide (ZrO) 0.49-0.99; zinc oxide (ZnO) 7.87-10.81; the alumina ceramics (Al2O3) is a-alumina ceramics (a-Al2O3), wherein the low-temperature crystallisable glass and the a-alumina ceramics (a-Al2O3) have a ratio of (0.82-0.88):(1.18-1.12), respectively, the low-temperature crystallisable glass and the a-alumina ceramics (a-Al2O3) have an average particle size of (2.4-2.8):(1.5-1.8), respectively.EFFECT: improvement of electrophysical parameters – reduction of the dielectric loss tangent, provision of specified – required values of dielectric constant, ε in a wide range of operating frequencies, and accordingly reduction of microwave losses, and expansion of functionality in terms of the application device of microwave electronics, increase in mechanical strength while maintaining other electrophysical parameters – high volume electrical resistivity, ρ, compatibility of temperature coefficients of linear expansion (TCLE), high density.1 cl, 2 tbl

The invention provides a microwave electron gun, a method for generating an electron cyclotron resonance region and an ion implanter, and the microwave electron gun comprises a plasma chamber; the plasma chamber is provided with a first end and a second end; the first end is used for introducing microwaves; the second end is used for introducing gas; an escape area is arranged on the side wall of the plasma chamber, the particle escape efficiency of the escape area is gradually reduced from the first end to the second end, and particles comprise electrons and / or gas molecules / atoms. According to the microwave electron gun in the technical scheme, the leakage degree of gas in the plasma chamber is reduced, and the working performance of the microwave electron gun is improved.