13 results about "Microwave electronics" patented technology

FIELD: microwave electronic devices.SUBSTANCE: in a low-noise microwave field-effect transistor on a semiconductor heterostructure, at least three quantum barrier layers of i-AlAs are additionally made, each with a thickness of 2-6 atomic monolayers, wherein each of said quantum barrier layers is located between the actual channel layer of InyGa1-yAs or a group of layers of the latter and the gate, wherein at least one quantum barrier layer is located between the doped layer and, or δ n-layer and the actual channel layer of InyGa1-yAs or a group of layers of the latter and at least one quantum barrier layer is located between the doped layer and, orδ n-layer and a gate, wherein the quantum barrier layers are separated from each other by at least one layer of narrow-band material AlxGa1-xAs, with a molar fraction of the chemical element Al x less than 0.4, with a thickness equal to or greater than 2 atomic monolayers, or a layer of GaAs, with a thickness equal to or greater than 2 atomic monolayers, between the actual channel layer InyGa1-yAs or a group of layers of the latter and the buffer layer, layers of GaAs, transition layers, quantum barrier layers i-AlAs, barrier layers, and layers doped with an acceptor impurity are made, on the last layer of the group of barrier layers, quantum barrier layers i-AlAs, barrier, transition and contact layers are made in a given sequence.EFFECT: increase in the gain factor and a reduction in the noise figure.1 cl, 1 dwg, 1 tbl

The invention discloses a whole-process modeling method and system for a microwave compound semiconductor device, and relates to the technical field of microwave electronic devices. The method comprises six steps of newly building a device model, importing measured data, extracting parameters of a small-signal model, extracting parameters of a nonlinear current model, extracting parameters of a nonlinear capacitance model and globally verifying the model, so that one-stop parameter extraction covering the whole process is realized, and an analysis and optimization algorithm is integrated to improve the parameter precision; through global verification of five dimensions of multi-bias S parameters, current characteristics, capacitance characteristics, power scanning characteristics and a load traction circle diagram, commercial microwave simulation software is combined, and a Verilog A model capable of being directly loaded is output. According to the method, the problems that in the prior art, the process is not coherent, and verification dimensions are insufficient are solved, the modeling efficiency and the model precision are improved, and accurate model support is provided for high-frequency and high-power electronic devices.

The utility model discloses a millimeter wave secondary down-conversion module, which relates to the technical field of microwave electronics, adopts a double-balanced mixer to integrate frequency conversion, filtering amplification and power division monitoring functions in the module, and compared with the traditional scheme, the millimeter wave secondary down-conversion module has the advantages that the volume is greatly reduced, and the cost is reduced. The shunt signals of the power divider are subjected to frequency conversion dynamic adaptation and intelligent AGC closed-loop control through the detection module, so that the technical bottlenecks of the traditional down-conversion module in volume, frequency band stiffness and reliability are overcome, and meanwhile, the rapid deployment capability of one module and multiple scenes is realized; and a high-performance and low-cost millimeter wave receiving solution is provided for 6G communication, a low-orbit satellite terminal and an intelligent radar system.

The application provides a microwave electron gun, a method for generating an electron cyclotron resonance region and an ion implanter, wherein the microwave electron gun comprises: a plasma chamber; the plasma chamber has a first end and a second end; the first end is used for passing in microwaves; the second end is used for passing in gas; an escape region is arranged on the sidewall of the plasma chamber, and the particle escape efficiency of the escape region gradually decreases from the first end to the second end, wherein the particles include electrons and / or gas molecules / atoms. The microwave electron gun provided by the technical scheme reduces the leakage degree of the gas in the plasma chamber and improves the working performance of the microwave electron gun.

This invention discloses a full-process modeling method and system for microwave compound semiconductor devices, belonging to the field of microwave electronic device technology. The method includes six steps: device model creation, measured data import, small-signal model parameter extraction, nonlinear current model parameter extraction, nonlinear capacitance model parameter extraction, and global model verification. It achieves one-stop parameter extraction covering the entire process, integrating analytical and optimization algorithms to improve parameter accuracy. Global verification is performed across five dimensions: multi-bias S-parameters, current characteristics, capacitance characteristics, power sweep characteristics, and load pull circle diagram. Combined with commercial microwave simulation software, a directly loadable Verilog A model is output. This invention solves the problems of disjointed processes and insufficient verification dimensions in existing technologies, improving modeling efficiency and accuracy, and providing precise model support for high-frequency, high-power electronic devices.

Miniature Flash Radiotherapy Equipment The present invention discloses miniature Flash radiotherapy equipment, comprising: a 3D scanning unit (10) used to obtain 3D data of a target area, said 3D data being used to determine the energy of an electron beam and to determine a target scanning trajectory in the target region using the electron beam; a microwave electron gun (20) used to generate an electron beam current having an energy and dose adapted to the 3D data; and a beam transmission unit (30) used to transmit the electron beam generated by the microwave electron gun (20) and enable the electron beam to perform the scan in the target area along the target trajectory. Figure to be published with the abbreviation: Figure 2

The invention discloses a NiCuZn microwave ferrite material with high spin wave line width and a preparation method, relates to the technical field of electronic information materials and microwave electronics, and comprises a NiCuZn microwave ferrite material with high performance through a multi-ion synergistic effect method, and by adding In < 3 + > ions and Ga < 3 + > ions capable of reducing ferromagnetic resonance line width, the high-performance NiCuZn microwave ferrite material with high spin wave line width can be obtained. The NiCuZn microwave ferrite material with the high spin wave line width is obtained by adding a high-speed relaxation ion Ho < 3 + > to replace Zn < 2 + > ions on the A site of spinel, adding a rapid relaxation ion Ho < 3 + > to replace Ni < 2 + > ions on the B site of spinel, and then replacing trivalent Fe < 3 + > ions with Mn < 2 + > ions to regulate and control element and electricity price balance in the ferrite and obtain the NiCuZn microwave ferrite material with the high spin wave line width. The material can meet the power bearing capacity of a microwave device under high power, and the device performance is excellent.

This utility model relates to the field of microwave electronics technology, specifically a temperature compensation circuit and a bandpass filter, comprising a composite capacitor including a negative temperature coefficient (NTC) capacitor and a positive temperature coefficient (PTC) capacitor. The first terminals of the NTC capacitor and the PTC capacitor are connected together to a first port; the second terminals of the NTC capacitor and the PTC capacitor are connected together to a second port. By connecting the NTC capacitor and the PTC capacitor, which have opposite temperature characteristics, in parallel, a composite capacitor unit is formed. When the temperature changes, the capacitance of the NTC capacitor decreases, while the capacitance of the PTC capacitor increases or remains stable within a specific temperature range. The opposite trends of these two changes result in a total equivalent capacitance change that is much smaller than that of any single capacitor, directly compensating for the temperature drift of the lumped capacitor itself and reducing the impact of temperature on the filter's center frequency.

The invention provides a high-suppression strip line filter bank based on a multilayer printed board, which belongs to the technical field of microwave electronic products and comprises a main cavity, a printed board arranged in the main cavity, an upper cover plate welded at the upper end of the main cavity and a lower cover plate welded at the lower end of the main cavity. The printed board comprises eight double-cascaded high-suppression strip line filters, a microstrip line, a radio frequency device, a power supply device and a plurality of strip line-microstrip transition structures, wherein the microstrip line, the radio frequency device and the power supply device are arranged on the top layer of the printed board, the plurality of strip line-microstrip transition structures are used for radio frequency signal transmission between the strip line filters and the microstrip line, and each strip line filter is a two-stage 9-order strip line interdigital filter. According to the filter bank, two stages of 9-order interdigital filters are directly cascaded, and structures such as an attenuator are not added, so that all the filters are ensured to be positioned on a strip line layer, and the size is greatly reduced.

The application relates to the field of radio frequency and microwave electronic technology and discloses a high-efficiency high-linearity dual-frequency power amplifier which comprises an input duplexer, a high-frequency power amplifier, a low-frequency power amplifier, an analog voltage source, a power supply and an output duplexer; two input ends of the input duplexer are connected with a radio frequency input end; two output ends of the input duplexer are connected with an input end of the high-frequency power amplifier and an input end of the low-frequency power amplifier respectively; an output end of the high-frequency power amplifier and an output end of the low-frequency power amplifier are connected with two input ends of the output duplexer respectively; two output ends of the output duplexer are connected with a radio frequency output end; the analog voltage source is connected with a bias voltage end of the high-frequency power amplifier and a bias voltage end of the low-frequency power amplifier respectively; and the power supply is connected with a power supply end of the high-frequency power amplifier and a power supply end of the low-frequency power amplifier respectively. The application can realize high power additional efficiency and high linearity simultaneously under dual frequency bands.

FIELD: glass ceramics.SUBSTANCE: low-temperature glass-ceramic material for microwave electronics is claimed, containing a low-temperature crystallisable glass based on oxides of chemical elements – aluminium (Al2O3), silicon (SiO2), boron (B2O3), calcium (CaO), magnesium (MgO), strontium (SrO), copper (Cu2O), zirconium (ZrO), zinc (ZnO) and alumina ceramics (Al2O3) in a given ratio, characterised in that the low-temperature crystallisable glass contains the mentioned components in the following ratio, respectively, mas.%: aluminium oxide (Al2O3) 14.55-15.15; silicon oxide (SiO2) 25.56-28.51; boron oxide (B2O3) 16.72-19.66; calcium oxide (CaO) 19.66-23.60; magnesium oxide (MgO) 4.13-5.89; strontium oxide (SrO) 1.97-2.95; copper oxide (Cu2O) 0.49-0.99; zirconium oxide (ZrO) 0.49-0.99; zinc oxide (ZnO) 7.87-10.81; the alumina ceramics (Al2O3) is a-alumina ceramics (a-Al2O3), wherein the low-temperature crystallisable glass and the a-alumina ceramics (a-Al2O3) have a ratio of (0.82-0.88):(1.18-1.12), respectively, the low-temperature crystallisable glass and the a-alumina ceramics (a-Al2O3) have an average particle size of (2.4-2.8):(1.5-1.8), respectively.EFFECT: improvement of electrophysical parameters – reduction of the dielectric loss tangent, provision of specified – required values of dielectric constant, ε in a wide range of operating frequencies, and accordingly reduction of microwave losses, and expansion of functionality in terms of the application device of microwave electronics, increase in mechanical strength while maintaining other electrophysical parameters – high volume electrical resistivity, ρ, compatibility of temperature coefficients of linear expansion (TCLE), high density.1 cl, 2 tbl

The invention provides a microwave electron gun, a method for generating an electron cyclotron resonance region and an ion implanter, and the microwave electron gun comprises a plasma chamber; the plasma chamber is provided with a first end and a second end; the first end is used for introducing microwaves; the second end is used for introducing gas; an escape area is arranged on the side wall of the plasma chamber, the particle escape efficiency of the escape area is gradually reduced from the first end to the second end, and particles comprise electrons and / or gas molecules / atoms. According to the microwave electron gun in the technical scheme, the leakage degree of gas in the plasma chamber is reduced, and the working performance of the microwave electron gun is improved.