High thermal conductivity microwave attenuation AlN-based composite material and preparation method thereof

A technology of microwave attenuation and composite materials, which is applied in the field of green environmental protection microwave attenuator materials and preparation, microwave attenuator materials and preparation, can solve the problems of not showing microwave absorption effect, etc., and achieve improved density, excellent dielectric properties, Effect of improving dielectric loss

Inactive Publication Date: 2013-03-20
UNIV OF SCI & TECH BEIJING
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The present invention aims at the defects of existing cermet-based microwave absorbing materials prepared by hot pressing, and aims to provide a microwave attenuation with high density and high loss obta

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (2) Put the mixed powder slurry described in step (1) in a vacuum drying oven, and vacuum dry at 70° C. for 2 hours to obtain a mixed powder.

[0022] (3) Put the mixed powder described in step (2) in a graphite mold for SPS sintering to prepare a composite ceramic sample, the sintering temperature is 1600°C, the holding time is 10min, the sintering pressure is 30MPa, and the heating rate is 100°C / min .

[0023] (4) Process the composite block material described in step (3) according to the specific shape and size when used, to obtain the CNTs-W-AlN composite block material for microwave attenuator. Its relative density is 98%, dielectric constant is 17, dielectric loss tangent is 0.035, and it has good wave-absorbing performance in the range of 70kHz~1MHz.

[0024]

[0025] Example 2

Embodiment 2

[0027] (2) Put the mixed powder slurry described in step (1) in a vacuum drying oven, and vacuum dry at 70° C. for 2 hours to obtain a mixed powder.

[0028] (3) Put the mixed powder described in step (2) in a graphite mold for SPS sintering to prepare a composite ceramic sample, the sintering temperature is 1600°C, the holding time is 5min, the sintering pressure is 30MPa, and the heating rate is 100°C / min .

[0029] (4) Process the composite block material described in step (3) according to the specific shape and size when used, to obtain the CNTs-W-AlN composite block material for microwave attenuator. Its relative density is 98%, the dielectric constant is 17.5, the dielectric loss tangent is 0.04, and it has good wave-absorbing performance in the range of 70kHz~1MHz.

[0030]

[0031] Example 3

Embodiment 3

[0033] (2) Put the mixed powder slurry described in step (1) in a vacuum drying oven, and vacuum dry at 70° C. for 2 hours to obtain a mixed powder.

[0034] (3) Put the mixed powder described in step (2) in a graphite mold for SPS sintering to prepare a composite ceramic sample, the sintering temperature is 1400°C, the holding time is 5min, the sintering pressure is 30MPa, and the heating rate is 100°C / min .

[0035](4) Process the composite block material described in step (3) according to the specific shape and size when used, to obtain the CNTs-W-AlN composite block material for microwave attenuator. Its relative density is 98%, dielectric constant is 17.3, dielectric loss tangent is 0.032, and it has good wave-absorbing performance in the range of 70kHz~1MHz.

[0036]

[0037] Example 4

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high thermal conductivity microwave attenuation AlN-based composite material and a preparation method thereof, belonging to the field of microwave electronics vacuum technology. According to the high thermal conductivity microwave attenuation AlN-based composite material, (0.1-2.0)vol.% of CNTs (Carbon Nano Tubes) and (1.0-20.0)vol.% of W which are used as metal phases and (100-CNTs-W)vol.% of AlN which is used as a medium phase are used. The preparation method comprises the steps of: mixing the CNTs, the W powder and the AlN powder according to a certain volume ratio to obtain a mixture; and forming and sintering the mixture to obtain a CNTs/W/AlN complex phase microwave absorbing material. The high thermal conductivity microwave attenuation AlN-based composite material has relative density being more than 98 percent, dielectric constant being 17-25 and dielectric loss angle tangent being more than 0.04, has excellent wave absorbing property within a range of 70kHz-1MHz, is especially applicable to preparation of a microwave electric vacuum device, and can be applied to a passive electronic countermeasure and microwave measurement system.

Description

technical field [0001] The present invention relates to a microwave attenuator material and its preparation method, in particular to a green environment-friendly microwave attenuator material and its preparation technology applied under vacuum conditions, specifically a carbon nanotube / tungsten / aluminum nitride (CNTs / W / AlN) composite phase microwave absorbing material and belongs to the field of microwave electron vacuum technology. Background technique [0002] Microwave attenuation materials are widely used in microwave electric vacuum devices. They load high-frequency interaction circuits such as resonant cavities and slow-wave structures to broaden the frequency band, suppress oscillation and eliminate other non-design modes. In addition, microwave attenuating materials are widely used in passive electronic countermeasures. Important facilities on the ground, aircraft in the air, and the construction of confidential microwave isolation rooms all require a large amount o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C22C29/16C22C1/05
Inventor 贾成厂高鹏张玉利王江源崔照雯常宇宏
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products