95results about How to "Low relative permittivity" patented technology

The invention relates to a semiconductor structure. A semiconductor structure forming method comprises the following steps of providing a substrate; forming a carbon-containing dielectric layer on the surface of the substrate; forming a carbon-rich protecting layer on the surface of the carbon-containing dielectric layer, wherein the carbon atom concentration in the carbon-rich protecting layer material is greater than that in the carbon-containing dielectric layer material; forming a graphical hard mask layer on the surface of the carbon-rich protecting layer; and with the graphical hard mask layer as a mask, etching the carbon-rich protecting layer and the carbon-containing dielectric layer to form an opening, wherein the opening bottom makes the substrate surface exposed; and forming a metal layer filling the opening. An undercut phenomenon is prevented. The quality of the formed metal layer is improved. The performance of the semiconductor structure is further optimized.

A manufacturing method for forming a dual damascene structure in which the effective permittivity of an inter-layer insulating film is lowered without an etching mask for forming a contact hole, which is otherwise formed in the inter-layer insulating film. The manufacturing method comprises the step of forming an inorganic film to serve as an etching mask, on the inter-layer insulating film; the step of forming a first opening pattern for forming a wiring groove, in an upper part of the inorganic film; and the step of forming a second opening pattern for forming a contact hole, so as to coincide with the first opening pattern at least partially. Further, the contact hole is formed in the inter-layer insulating film by employing an etching mask made of the inorganic film, the inorganic film is etched into a state where only a third opening pattern obtained by transferring the first opening pattern is formed, and a wiring groove is formed in the inter-layer insulating film by employing the resulting inorganic film as the etching mask.

The present invention provides a molded article comprising a polytetrafluoroethylene resin (A) and a thermoplastic resin (B) having a melting point of not lower than 100° C. but lower than 322° C., wherein the maximum peak temperature of the endothermic curve appearing on the crystal melting curve of the above polytetrafluoroethylene resin (A) as measured by a differential scanning calorimeter is higher by at least 3° C. than the maximum peak temperature of the endothermic curve appearing on the crystal melting curve of the above polytetrafluoroethylene resin (A) after heating to a temperature of not lower than 340° C. as measured by the differential scanning calorimeter.

PCT No. PCT / JP96 / 01107 Sec. 371 Date Oct. 27, 1997 Sec. 102(e) Date Oct. 27, 1997 PCT Filed Apr. 24, 1996 PCT Pub. No. WO96 / 34034 PCT Pub. Date Oct. 31, 1996A fluorosilicon network polymer prepared by the reaction of a tetraholosilane of the formula 1: SiX4 with an organohologen compound of the formula 2: RZ , an insulating coating prepared therefrom, semiconductor devices coated therewith, and processes for producing the same. In said formulas, R represents at least monofluorinated alkyl or aryl; and X and Z represent each independently boromine, iodine or chlorine.

The invention discloses a preparation method of low-dielectric-constant insulating paper. The method comprises the following steps of: stirring and dispersing raw wood pulp by use of a defibering device; pouring the prepared SiO2 hollow microsphere suspension into the defibering device, mixing, and continuing to stirring, wherein the stirring temperature is normal temperature, the stirring time after the mixing is 2-10 minutes, and the stirring rate is 3,000r / min; after the stirring, manufacturing the insulating paper quantized to 120g / m<2> on a paper former; and compacting and forming, wherein the SiO2 hollow microsphere added to the obtained low-dielectric constant insulating paper accounts for 1-7%. In the modified insulating paper disclosed by the invention, silicon dioxide hollow microsphere is added, the insulating performance of a transformer composite insulating system is improved by reducing the relative dielectric constant of the insulating paper, and the safe service life is prolonged. Meanwhile, the steps of the preparation method are simple and easy to realize, and the cost is low.

Provided are: an electrically insulating resin sheet for motors, which is used for achieving the insulation between coil wires or between a coil wire and an iron core in a motor, and which has high heat resistance, high electrical insulation performance and a high insulation breakdown voltage; and a process for producing the electrically insulating resin sheet. The electrically insulating resin sheet for motors, which is provided with a porous resin layer comprising a thermoplastic resin, is characterized in that the resin sheet has a relative permittivity of 2.0 or less at 1 GHz. It is preferred that the porous resin layer has an average cell diameter of 5.0 μm or less and contains cells in such an amount that the porosity is 30% or more.

A multilayer ceramic electronic device comprising: a ceramic element body, in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately stacked, and at least a pair of external electrodes which are connected to the internal electrode layers on surfaces of the ceramic element body; a thickness of the dielectric layers is 0.4 [mu]m or less, a width (W0) of the ceramic element body along a width-direction is 0.59 mm or less, a gap (Wgap) between an outer face of the ceramic element body and an end of the internal electrode layers along width-direction of the ceramic element body is 0.010 to 0.025 mm, and a ratio (Wgap / W0) of the gap with respect to the width is 0.025 or more.

The invention discloses a radio frequency coaxial connector assembly suitable for blind matching and capable of allowing insertion offset. The radio frequency coaxial connector assembly comprises an escapement connector, an optical hole connector and an adaptor; the escapement connector comprises an escapement outer conductor, an escapement inner conductor and an escapement insulator; the adaptorcomprises a circular tubular adaptor outer conductor, an adaptor inner conductor and two adaptor insulators, wherein the two adaptor insulators are mounted in two end inner holes of the adaptor outerconductor respectively; each adaptor insulator is a hollow cylinder with an inner hole; a plurality of blind holes which extend in the axial direction are uniformly distributed in the cylinder body inthe circumferential direction of each adaptor insulator; the blind holes of the two adaptor insulators are arranged oppositely and positioned in the inner sides of the two end inner holes of the adaptor outer conductor; and the adaptor inner conductor is mounted in the inner holes of the two adaptor insulators. By virtue of the radio frequency coaxial connector assembly, the impedance in the connector interconnection interface part can be matched mutually, relatively high axial and radial offset is allowed, radio frequency electrical performance is improved, and signal transmission quality isimproved.

A dielectric ceramic composition comprising forsterite in an amount of 93.0 to 99.0 mol % when calculating in terms of 2MgO—SiO2 and calcium titanate in an amount of 1.0 to 7.0 mol % when calculating in terms of CaTiO3 as main components, and as a subcomponent, aluminum oxide in an amount of 0.2 to 5 mass % when calculating in terms of Al2O3 per 100 mass % of said main components. According to the present invention, a dielectric ceramic composition, capable of having both low permittivity and good frequency-temperature characteristic as well as ensuring high Qf value and further having sufficient mechanical strength, and suitable to use in an antenna, a filter and the like used in the high-frequency region, can be provided. Also, the present invention allows providing a dielectric ceramic composition further having resistance to reduction in addition to all of the above properties.

In a dielectric ceramic composed of a composite oxide containing main grains (1) mainly composed of Ti and at least one alkaline earth metal element selected from Ca, Sr, and Ba, the main grains ( 1) Metal components containing Mg, Mn, and rare earth elements, and at least one metal component of Mg, Mn, and rare earth elements exists in the main crystal at a higher concentration than inside the main crystal grain (1) On the surface side of the particles, by containing 0.04 to 0.2 parts by mass of Zr in exchange for oxides with respect to 100 parts by mass of the composite oxide, a high dielectric constant can be realized even in micronized barium titanate-based crystal grains. , and can stabilize the temperature characteristics of the relative permittivity.

Disclosed is a composition for forming an insulating film containing a hydrolysis-condensation product and an organic solvent which hydrolysis-condensation product is obtained through hydrolysis-condensation of a component (A), which is at least one silane compound selected from the group consisting of compounds represented by the general formulae (1)-(3) below, performed in the presence of a component (B), which is a polycarbosilane having a main chain with a structure expressed as -(Si-CH2)x- and a structure represented by the general formula (4) below, a structure represented by the general formula (5) below, a structure represented by the general formula (6) below and a structure represented by the general formula (7) below.

The invention discloses a method for preparing of insulating paper containing modified montmorillonite. The method comprises the steps of concentrated pulp preparing, modified montmorillonite preparing, modified filler preparing and insulating paper preparing. Compared with existing technology, the preparing method has the following advantages: (1) by modifying montmorillonite first, the invention then make a modification on insulating paper packing and therefore can significantly improve its breakdown strength, reduce its relative dielectric constant and effectively restrain the emergence and development of partial discharge of the oil paper; (2) the modified montmorillonite and insulating paper packing can evenly disperse physically in insulating paper, without occurrence of intercalation or interlaminar delamination phenomenon.

The invention discloses a broadband dual-polarized micro-strip antenna sub-array with filtering and calibration functions, which comprises a radiation layer, a paper honeycomb supporting layer and a functional layer. The functional layer comprises an upper printing plate, a lower printing plate and a lower metal surface. An upper metal surface is arranged on the upper surface of the upper printingplate and etched with H-shaped slots, first H-shaped slots are arranged along the vertical direction of the upper metal surface, and second H-shaped slots are arranged along the horizontal direction.A polarization feed network is arranged on the lower printing plate and comprises T-shaped strip lines and characteristic strip lines, the polarization feed network with the T-shaped strip lines perpendicular to the first H-shaped slots is recorded as a horizontal polarization feed network, and the polarization feed network with the T-shaped strip lines perpendicular to the second H-shaped slotsis recorded as a vertical polarization feed network. Metalized via holes are formed in the lower metal surface, penetrate through the lower printing plate and are symmetrically distributed in the twosides of the polarization feed network. Through the technical scheme in the invention, a dual-polarized broadband micro-strip antenna sub-array with power distribution, filtering and calibration functions is realized.

A PCB that can transmit a high frequency signal of a GHz band with a low loss includes an insulator and magnetic nanoparticles dispersed in the insulator.

The invention relates to a preparation method of modified cellulose insulating paper, and belongs to the technical field of preparation of insulating materials. The preparation method comprises the steps of: firstly adopting micro-explosion to generates a pressure difference inside fiber during pressurization and instantaneous pressure releasing under the condition of maintaining intrinsic physical mechanical properties and complete appearance of birch fiber so as to form high-pressure airflow which impact from inside to outside inside the birch fiber, destroying cell walls, pit membranes andother weak tissue of the birch fiber so as to achieve preliminary fiber degradation, then mixing the obtained fiber after preliminary fiber degradation is conducted with tartaric acid, performing cooking at high temperature and high pressure, carrying out beating and oxidizing to obtain modified paper pulp, then utilizing a reaction of sodium silicate, hydrochloric acid and aminopropyl triethoxy silane so as to prepare modified nano silica, mixing the modified nano silica with the modified paper pulp, then carrying out papermaking, and performing a hot pressing reaction to obtain the modifiedcellulose insulating paper. The obtained insulating paper has good insulation performance, high mechanical strength and a broad application prospect.

The invention discloses a pyroelectric ceramic material with Pb1-x-yLaxCayTi1-x / 4O3 (x, y=0.1-0.2) as structural formula, which comprises the following steps: 1. blending Pb3O4, La2O3, CaCO3 and TiO2; grinding; drying; sieving; prefiring; balling; drying; sieving to obtain powder material; 2. dissolving ethyl silicate in the compound solution of deionized water and alcohol; adding alcaine; blending; stirring to prepare hydrolytic liquid; 3. blending powder material and hydrolytic liquid evenly to prepare slurry; 4. casting the slurry in the mould through vacuum debubbling; adjusting pH value; solidifying slurry block; drying to mould; 5. sintering the mould at 1100-1200 deg.c; insulating to obtain the product.

The invention discloses a method for preparing a Mo / AlN / BN coating on the surface of a diamond / copper composite matrix, and relates to composite material surface treatment. The method comprises the following steps: carrying out magnetron sputtering of the surface of the diamond / copper composite matrix to deposit a metal Mo transition layer; carrying out reaction sputtering on the metal Mo transition layer to deposit a AlN film; and depositing a BN anti-oxidation protection layer on the AlN film. The Mo transition layer is deposited on the surface of the diamond / copper composite matrix subjected to ion source bombardment cleaning in order to alleviate a matrix and coating expansion coefficient loss problem and enhance the film-matrix bonding strength; the AlN film is deposited by adopting a reaction magnetron sputtering process; and the high-heat-conductivity BN anti-oxidation protection layer is finally deposited to improve the oxidation resistance of the coating. The Mo / AlN / BN coating having the advantages of high insulation property, low relative dielectric coefficient, low dielectric loss, high heat conductivity, good combination and stable performances can be prepared on the diamond / copper composite matrix through the method.

A dielectric ceramic composition comprising forsterite in an amount of 93.0 to 99.0 mol % when calculating in terms of 2MgO.SiO2 and calcium titanate in an amount of 1.0 to 7.0 mol % when calculating in terms of CaTiO3 as main components, and as a subcomponent, aluminum oxide in an amount of 0.2 to 5 mass % when calculating in terms of Al2O3 per 100 mass % of said main components. According to the present invention, a dielectric ceramic composition, capable of having both low permittivity and good frequency-temperature characteristic as well as ensuring high Qf value and further having sufficient mechanical strength, and suitable to use in an antenna, a filter and the like used in the high-frequency region, can be provided. Also, the present invention allows providing a dielectric ceramic composition further having resistance to reduction in addition to all of the above properties.

The invention provides a semiconductor device and a preparation method thereof, and relates to the technical field of semiconductors, and the method comprises the steps: forming a semiconductor lamination layer on a substrate; forming source electrode metal, drain electrode metal and grid electrode metal on the semiconductor lamination layer; forming a dielectric layer on the gate metal; and forming a source field plate on the dielectric layer, wherein the source field plate is located between the source metal and the drain metal. A material with a relative dielectric constant less than 5 can be selected to manufacture the protective layer, so that the combined protective layer can also exist between the source field plate and the drain metal when covering the upper surface of the device, and the relative dielectric constant between the source field plate and the drain metal can be reduced by selecting the protective layer with the relative dielectric constant less than 5; therefore, Cds between the source field plate and the drain electrode metal are reduced, the drain electrode efficiency of the semiconductor device is improved, and the semiconductor device has better performance.

The invention provides a semiconductor structure and a forming method therefor, and the method comprises the steps: providing a substrate; forming a gate structure on the substrate; forming a side wall on a side wall of the gate structure, wherein the side wall is made of a low-k dielectric material; forming a nitrogen-doped layer on the side wall, wherein the percentage of nitrogen atoms in the nitrogen-doped layer is greater than the percentage of the nitrogen atoms in the side wall; forming source-drain doping regions in the substrate at two sides of the gate structure after the forming ofthe nitrogen-doped layer; forming an interlayer dielectric layer covering the gate structure and the substrate; forming a contact hole plug in the interlayer dielectric layer, wherein the contact holeplug makes contact with the source-drain doping regions. According to the invention, the side wall is provided with the nitrogen-doped layer, and the nitrogen-doped layer protects the side wall during the forming of the contact hole plug, and can reduce the etching rate of the etching technology for forming the contact hole plug to the side wall, thereby avoiding a phenomenon that the side wall is damaged or the gate structure is exposed so as to avoid a short circuit fault happening to the contact hole plug and the gate structure, and improving the electrical performances of a semiconductordevice.

An adamantane derivative of formula (I), a compound of formula (VII) or (VIII), compositions containing them, and optical electronic members using the resin compositions. In the formulas, W represents, for example, a hydrogen atom, X is bonded to a bridge-head adamantane carbon and represents, for example, a group of represented by the general formula (II), Y represents a group of formula (V) or (VI), R1 represents a methyl group or an ethyl group, R2 represents a C1 to C10 hydrocarbon group which may contain O or S, m is an integer of 2 to 4, k is an integer of 0 to (16−m) and p and q are each an integer of 1 to 5.

The invention relates to the technical field of microwave electronic equipment interconnection, and discloses a single-support medium coaxial adapter with capacitive compensation. The single-support medium coaxial adapter is characterized by comprising an SMA jack shell (1), an SMPM pin shell (2) and a stub assembly, the stub assembly comprises an inner stub (3) and an insulation support medium (4) which are coaxially arranged, the insulation support medium (4) is fixed on the outer peripheral surface of the inner plug (3), the plug assembly is inserted into the SMA jack shell (1) from one endfar away from the insulation support medium (4), a first step structure (11) is arranged in the SMA jack shell (1), a second step structure (21) is arranged in the SMPM pin shell (2), and when the SMA jack shell (1) and the SMPM pin shell (2) are in an inserted state, the SMPM pin shell (2) and the SMA jack shell (1) are connected through threads, and the two ends of the insulation supporting medium (4) abut against the first step structure (11) and the second step structure (21) respectively.

The invention discloses an N-type connector, which includes a first outer conductor, a dielectric body and an inner conductor. The first outer conductor includes a mating end connected with an external plug and a tail end used for being fixedly connected with a radio frequency cable. The dielectric body is arranged in the first outer conductor and has multiple through holes. The inner conductor iscomposed of a first inner conductor, a second inner conductor and a third inner conductor. The second inner conductor passes through the dielectric body, and the two ends of the second inner conductor are located outside the dielectric body. The first inner conductor and the third inner conductor are respectively connected with the two ends of the second inner conductor. Impedance compensation iscarried out by means of coplanar compensation, which can reduce the loss caused by dielectric filling. Meanwhile, the N-type connector has good voltage standing wave ratio, and meets the requirementsof precision N-type connectors.

A forming method of a fin type field effect transistor includes the steps: providing a substrate, wherein a plurality of separate fins are formed on the surface of the substrate, and a grid electrode structure crossing the fins is formed on the surface of the substrate; forming spacer films on the sidewall of the grid electrode structure, the top surface of the grid electrode structure, sidewalls of the fins, top surfaces of the fins and the surface of the substrate; conducting back etching on the spacer films through an anisotropic etching process, removing the spacer films on the surface of the substrate, the top surface of the grid electrode structure and the top surfaces of the fins, forming a first spacer on the sidewall of the grid electrode structure, and forming second spacers on the sidewalls of the fins; carrying out doping processing on the first spacer, and reducing the etching rate of the isotropic etching process for the first spacer; etching and removing the second spacers through an isotropic etching process, making the sidewalls of the fins exposed, and keeping the first spacer of the sidewall of the grid electrode structure; forming doped regions inside the fins at the two sides of the first spacer; and forming metal contact layers on the sidewalls and the top surfaces of the fins. The contact resistance of a fin type field effect transistor is reduced, and the response speed of the fin type field effect transistor is increased.

The invention relates to a polytetrafluoroethylene oil-based solvent type dispersion, an epoxy resin composition containing polytetrafluoroethylene and a cured material thereof. In the invention, the polytetrafluoroethylene oil-based solvent type dispersion is used to provide a PTFE oil-based solvent type dispersion having a micro particle size, low viscosity and excellent stability in storage. The polytetrafluoroethylene oil-based solvent type dispersion is characterized by comprising polytetrafluoroethylene having the specific surface area of less than 15m<2> / g and a fluorine type additive being 0.1-50wt% relative to the quality of the polytetrafluoroethylene and at least containing a fluorine-contained group and a lipophilic group. The epoxy resin composition containing the polytetrafluoroethylene oil-based solvent type dispersion having excellent dispersity is used to provide an epoxy resin composition containing the polytetrafluoroethylene and being suitable for an electronic substrate material, an insulation material, a bonding material and the like having a low relative dielectric constant and a low dielectric loss angle tangent, and a cured material thereof.