Semiconductor device and preparation method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve the problems of increasing device area and device production cost, and achieve the effects of improving drain efficiency, good performance, and reducing Cds

Pending Publication Date: 2021-09-24
深圳市时代速信科技有限公司
View PDF10 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the existing technology, Cds is generally reduced by increasing the distance between the source field plate and the drain, thereby improving efficiency, but increasing the distance between the source field plate and the drain will increase the device area, resulting in a substantial increase in device production costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0030] It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, wi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
relative permittivityaaaaaaaaaa
relative permittivityaaaaaaaaaa
Login to view more

Abstract

The invention provides a semiconductor device and a preparation method thereof, and relates to the technical field of semiconductors, and the method comprises the steps: forming a semiconductor lamination layer on a substrate; forming source electrode metal, drain electrode metal and grid electrode metal on the semiconductor lamination layer; forming a dielectric layer on the gate metal; and forming a source field plate on the dielectric layer, wherein the source field plate is located between the source metal and the drain metal. A material with a relative dielectric constant less than 5 can be selected to manufacture the protective layer, so that the combined protective layer can also exist between the source field plate and the drain metal when covering the upper surface of the device, and the relative dielectric constant between the source field plate and the drain metal can be reduced by selecting the protective layer with the relative dielectric constant less than 5; therefore, Cds between the source field plate and the drain electrode metal are reduced, the drain electrode efficiency of the semiconductor device is improved, and the semiconductor device has better performance.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a semiconductor device and a manufacturing method thereof. Background technique [0002] For RF devices, the drain efficiency (Drain efficiency) is a key metric, which is related to C ds (source and drain capacitance), C ds The smaller the value, the higher the drain efficiency. In a GaN device, the source field plate is electrically connected to the source, and the distance between the source field plate and the drain is the position where the distance between the source and the drain is the smallest. Therefore, the drain is usually realized by changing the capacitance between the source field plate and the drain. Increased efficiency. [0003] In the prior art, Cds is generally reduced by increasing the distance between the source field plate and the drain, thereby improving efficiency. However, increasing the distance between the source field plate and the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/40H01L29/778H01L29/786H01L21/336H01L21/335
CPCH01L29/0649H01L29/405H01L29/778H01L29/78606H01L29/66462H01L29/66742
Inventor 杨天应
Owner 深圳市时代速信科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap