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Method for preparing Mo/AlN/BN coating on surface of diamond/copper composite matrix

A diamond and substrate technology, applied in the direction of metal material coating process, coating, metal layered products, etc., can solve the problem of easy formation of oxide layer, etc., achieve good bonding, enhance film-base bonding strength, and low relative dielectric The effect of the coefficient

Inactive Publication Date: 2014-05-28
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It should be pointed out that in the process of preparing the AlN film material, there are residual oxygen in the deposition chamber and pump pollution, which will cause a small amount of C and O elements to remain in the AlN coating; at the same time, the surface of the AlN film is prone to oxidation in the air. layer, so that the surface contains a large amount of O

Method used

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  • Method for preparing Mo/AlN/BN coating on surface of diamond/copper composite matrix
  • Method for preparing Mo/AlN/BN coating on surface of diamond/copper composite matrix
  • Method for preparing Mo/AlN/BN coating on surface of diamond/copper composite matrix

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1. Substrate pretreatment

[0026] (1) Solvent cleaning treatment. First use isopropanol to ultrasonically clean for 15 minutes, then use 95% alcohol to ultrasonically clean for 15 minutes, and then rinse with ultrapure water for 3 minutes after taking it out.

[0027] (2) Ion source bombardment cleaning treatment. The substrate was cleaned by Hall ion source for 8 min, and the ambient pressure was 2.7×10 -2 Pa, Ar flow rate is 20sccm, substrate bias voltage is -150V, cathode current is 35A, cathode voltage is 25V, anode current is 7.8A, anode voltage is 95V.

[0028] 2. Deposit the metal Mo transition layer on the surface of the diamond / copper composite substrate by magnetron sputtering

[0029] (1) Mo metal target pretreatment. Heat the ambient temperature of the chamber to 175°C, use a mechanical pump and a molecular pump secondary device to evacuate the background of the deposition chamber, when the chamber pressure is ≤5.0×10 -5 After Pa, Ar was introduced, th...

Embodiment 2

[0043] 1. Substrate pretreatment

[0044] (1) Solvent cleaning treatment. With embodiment 1.

[0045] (2) Ion source bombardment cleaning treatment. With embodiment 1.

[0046] 2. Deposit the metal Mo transition layer on the surface of the diamond / copper composite substrate by magnetron sputtering

[0047] (1) Metal target pre-sputtering. With embodiment 1.

[0048] (2) Deposit a metal transition layer. With embodiment 1.

[0049] 3. Reactive sputtering deposition of AlN thin films

[0050] (1) Al target pre-sputtering. With embodiment 1.

[0051] (2) Deposit AlN film. will deposit N during 2 Flow is changed into 30%, and other steps are with embodiment 1.

[0052] 4. Deposit BN anti-oxidation protective layer on AlN film

[0053] (1) BN target pre-sputtering. With embodiment 1.

[0054] (2) Deposit BN anti-oxidation protective layer. With embodiment 1.

[0055] 5. Characterize 30%N by X-ray diffraction (XRD) 2 - Phase structure of Mo / AlN / BN coatings. figur...

Embodiment 3

[0061] 1. Substrate pretreatment

[0062] (1) Solvent cleaning treatment. With embodiment 1.

[0063] (2) Ion source bombardment cleaning treatment. With embodiment 1.

[0064] 2. Deposit the metal Mo transition layer on the surface of the diamond / copper composite substrate by magnetron sputtering

[0065] (1) Metal target pre-sputtering. With embodiment 1.

[0066] (2) Deposit a metal transition layer. With embodiment 1.

[0067] 3. Reactive sputtering deposition of AlN thin films

[0068] (1) Al target pre-sputtering. With embodiment 1.

[0069] (2) Deposit AlN film. will deposit N during 2 Flow is changed into 40%, and other steps are with embodiment 1.

[0070] 4. Deposit BN anti-oxidation protective layer on AlN film

[0071] (1) BN target pre-sputtering. With embodiment 1.

[0072] (2) Deposit BN anti-oxidation protective layer. With embodiment 1.

[0073] 5. Using X-ray diffraction (XRD) to characterize 40%N 2 - Phase structure of Mo / AlN / BN coatings. ...

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Abstract

The invention discloses a method for preparing a Mo / AlN / BN coating on the surface of a diamond / copper composite matrix, and relates to composite material surface treatment. The method comprises the following steps: carrying out magnetron sputtering of the surface of the diamond / copper composite matrix to deposit a metal Mo transition layer; carrying out reaction sputtering on the metal Mo transition layer to deposit a AlN film; and depositing a BN anti-oxidation protection layer on the AlN film. The Mo transition layer is deposited on the surface of the diamond / copper composite matrix subjected to ion source bombardment cleaning in order to alleviate a matrix and coating expansion coefficient loss problem and enhance the film-matrix bonding strength; the AlN film is deposited by adopting a reaction magnetron sputtering process; and the high-heat-conductivity BN anti-oxidation protection layer is finally deposited to improve the oxidation resistance of the coating. The Mo / AlN / BN coating having the advantages of high insulation property, low relative dielectric coefficient, low dielectric loss, high heat conductivity, good combination and stable performances can be prepared on the diamond / copper composite matrix through the method.

Description

technical field [0001] The invention relates to a composite material surface treatment, in particular to a method for preparing a Mo / AlN / BN coating on the surface of a diamond / copper composite substrate. Background technique [0002] In the field of integrated circuits, due to the rapid increase in integration, the heat generated by the chip rises sharply and the life of the chip decreases. Fatigue and thermal stress caused by thermal expansion coefficient mismatch, so the packaging material must meet the requirements of excellent heat dissipation and matching the thermal expansion coefficient of silicon materials ([1] G.R. Blackwell. The electronic packaging handbook, CRC Press, 2002.). Judging from the current development trend of electronic packaging technology, various packaging materials with a single matrix cannot meet the comprehensive requirements of various performances. Only metal matrix composite materials can fully meet the above requirements. The new diamond / co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/34C23C14/14C23C14/06B32B9/04B32B15/04
Inventor 王周成吴正涛祁正兵张东方
Owner XIAMEN UNIV
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