31results about How to "No size increase" patented technology

The invention is suitable for the technical field of spectrographs, and discloses a mobile phone spectrograph module and a mobile phone spectrograph with the mobile phone spectrograph module. The mobile phone spectrograph module comprises a shell with a slit. A plane-convex collimating lens used for collimating light rays entering the slit is arranged in the shell. A reflecting grating used for reflecting the light rays collimated by the plane-convex collimating lens and changing the incident polychromatic light into monochromatic light emitted in different directions is arranged on one side of the plane-convex collimating lens. A spherical reflecting mirror used for gathering the monochromatic light emitted by the reflecting grating is further arranged in the shell. A biconvex lens is arranged between the spherical reflecting mirror and the receiving face of a mobile phone camera. The mobile phone spectrograph comprises a mobile phone and the mobile phone spectrograph module. The mobile phone spectrograph module and the mobile phone spectrograph with the mobile phone spectrograph module are high in spectral resolution, compact in structure, easy to install and capable of being easily expanded and externally arranged.

The invention relates to the technical field of voltage sensors, concretely relates to a passive high-temperature voltage sensor utilizing the microwave scattering principle and also a preparation method thereof, and helps to solve the problems that a conventional voltage measuring method has many defects in high-temperature and other severe environments. The passive high-temperature voltage sensor includes a cylindrical pedestal and a sealing membrane. A concave cylindrical cavity is disposed inside the pedestal. Four symmetrical cylinders are disposed in the middle of the concave cylindrical cavity, and the height of each inner cylinder is lower than the upper surface of the concave cylindrical cavity. The upper surface of the pedestal, the inner surface of the concave cylindrical cavity and the upper surface of each inner cylinder are all equipped with metal layers through sputtering. A silk screen on the upper surface of the sealing membrane is provided with a microstrip antenna through sputtering, a grounding plane is disposed on the entire lower surface of the sealing membrane through sputtering, and the lower surface is equipped with a rectangular coupling slit. The pedestal and the sealing membrane are bonded to form a microwave resonant cavity. The passive high-temperature voltage sensor is reasonable in design and high in sensitivity, exhibits great stability, can work for a long period of time in high-temperature, high-voltage and other severe environments, and belongs to a passive high-temperature ceramic voltage sensor for wireless measuring on the basis of microwave scattering.

The invention discloses a broadband dual-polarized micro-strip antenna sub-array with filtering and calibration functions, which comprises a radiation layer, a paper honeycomb supporting layer and a functional layer. The functional layer comprises an upper printing plate, a lower printing plate and a lower metal surface. An upper metal surface is arranged on the upper surface of the upper printingplate and etched with H-shaped slots, first H-shaped slots are arranged along the vertical direction of the upper metal surface, and second H-shaped slots are arranged along the horizontal direction.A polarization feed network is arranged on the lower printing plate and comprises T-shaped strip lines and characteristic strip lines, the polarization feed network with the T-shaped strip lines perpendicular to the first H-shaped slots is recorded as a horizontal polarization feed network, and the polarization feed network with the T-shaped strip lines perpendicular to the second H-shaped slotsis recorded as a vertical polarization feed network. Metalized via holes are formed in the lower metal surface, penetrate through the lower printing plate and are symmetrically distributed in the twosides of the polarization feed network. Through the technical scheme in the invention, a dual-polarized broadband micro-strip antenna sub-array with power distribution, filtering and calibration functions is realized.

The invention discloses a six-axis robot, which is used for reducing the overall size of the six-axis robot and enabling the robot to rotate arms flexibly. The six-axis robot is characterized in that an elbow is of a double-joint structure, and a large arm and a small arm are respectively hinged with both ends of the elbow. According to the six-axis robot, on the premise that a rotating shaft is not additionally arranged on the double-joint elbow and the sufficient degree of freedom of the robot is guaranteed, the rotating angle of the six-axis robot on the same plane becomes large, and the overall size of the robot is not increased, so that the six-axis robot is especially suitable for a narrow working environment, and the application range of the six-axis robot is enlarged.

The invention discloses a millimeter wave power amplifier which comprises a signal input end, a signal output end, a power matching unit, a power distribution and synthesis matching unit and a power amplification unit, and the power distribution and synthesis matching unit further comprises a first resistor, a second resistor and a grounding transmission line. In the power distribution synthesis matching unit, the first end of a first resistor and the first end of a second resistor are connected with the first end of a grounding transmission line, the second end of the grounding transmission line is grounded, the second end of the first resistor is connected with the second end of a second T-shaped structure, and the second end of the second resistor is connected with the second end of a third T-shaped structure. Based on the prior art, the bandwidth is broadened by adding components on the circuit, the isolation degree of signals between branches is improved by adding the first resistor and the second resistor while the size of the circuit is not increased, and the circuit loss is reduced. The millimeter wave power amplifier chip can be realized in multiple processes, and huge benefits are brought to design and manufacturing of the millimeter wave power amplifier chip.

The invention discloses a contact window structure, a metal plug and a forming method thereof, the forming method of the contact window structure and a semiconductor structure, an annular gasket is formed on the surface of a target layer, and the middle of the annular gasket is provided with a central through hole exposing part of the surface of the target layer; forming a dielectric layer covering the substrate, the target layer and the annular gasket; etching the dielectric layer, and forming an etching hole communicated with the central through hole in the dielectric layer; and the annular gasket is removed along the etching hole and the central through hole, so that the size of the central through hole is enlarged, and the etching hole and the central through hole with the enlarged size form a contact window structure. Through the formed annular gasket, when the contact window structure is formed and the annular gasket is removed, the size of the central through hole can be increased, so that the size of the bottom of the contact window structure can be increased, and when a metal plug is formed in the contact window structure, the contact area between the bottom of the metal plug and a target layer is increased; and the contact resistance between the two is reduced.

The invention discloses a device structure for improving a GaN L-FER reverse breakdown voltage and a fabrication method thereof. The structure includes a substrate, a GaN or AlN buffer layer, an intrinsic GaN channel layer, and an intrinsic AlGaN barrier layer, dielectric passivation layer, anode double Schottky contact, and cathode ohmic contact. The AlGaN/GaN heterojunction material is epitaxially grown on the substrate, and after the ohmic contact and planar isolation are formed on the structure, the anode structure of the double Schottky contact is further formed, and finally the passivation layer is deposited to achieve passivation of the device. The device structure utilizes the anode structure of the double Schottky contact, and the Schottky contact plays a certain shielding effecton the high voltage in the reverse breakdown process, Thereby reducing the leakage current injected from the anode through the channel barrier layer or the buffer layer of the device to the cathode, further increasing the reverse breakdown voltage of the device. The implementation method is simple and can greatly improve the reverse breakdown voltage of GaN L-FER, thereby broadening its application in the field of power electronics.

The invention discloses a manufacturing method of a large-size optical fiber preform. The manufacturing method comprises the following steps: depositing by using a core rod with a small core-to-package ratio as a target rod, drying in a quartz furnace to increase the density of the porous optical fiber preform, introducing a small amount of chlorine gas and inert gas in the drying process, controlling the flow rate of the chlorine gas to be 0.3-0.8 L/min and the flow rate of the inert gas to be 5-10 L/min, and finally, putting into a vacuum sintering furnace, and sintering and densifying to form the final large-size optical fiber preform. According to the invention, the load of the vacuum sintering furnace can be reduced, the bubble-free, large-size and low-hydroxyl optical fiber preform can be manufactured, the overall manufacturing cost is low, and the method is suitable for large-scale production.

The invention discloses a pile-bearing supporting arm type retaining wall. The pile-bearing supporting arm type retaining wall comprises a bottom plate, a vertical arm fixed to the bottom plate and a rib plate used for connecting the bottom plate with the vertical arm; and a cast-in-situ bored pile is fixedly arranged at the bottom of the bottom plate, and the top of the cast-in-situ bored pile extends upwards into the bottom plate. According to the pile-bearing supporting arm type retaining wall, the cast-in-situ bored pile is only arranged below the bottom plate of the supporting arm type retaining wall, the cast-in-situ bored pile is in rigid connection with the bottom plate, the structure is simple, and the stress and force transmission ways are clear; the cast-in-situ bored pile has high pressure resistance, pulling resistance and horizontal external force bearing capacity; and the bottom plate transmits the dead weight, the upper load, the pressure borne by the vertical arm and other loads to a pile foundation, then the loads are transmitted to foundation soil through the pile foundation, and the purpose of improving the anti-overturning force, the anti-sliding force and the foundation bearing capacity on the premise that the size of the bottom plate is not increased is achieved.

The invention belongs to the technical field of tire manufacturing, and particularly relates to a tire lining layer manufacturing method which comprises the following two modes: mode 1, when the total width of a lining layer is smaller than 1000mm, the lining layer is directly pressed and applied together by adopting a calendaring method; in the second mode, when the total width of the lining layer is larger than or equal to 1000 mm, the lining layer is pasted with a needed rubber sheet in advance for calendaring, a forming roller calendaring rubber sheet and a flat roller calendaring rubber sheet are obtained, then at least one layer of forming roller calendaring rubber sheet and at least one layer of flat roller calendaring rubber sheet are selected according to the thickness requirement of the tire, and the lining layer is pasted into a corresponding shape; and the lining layer composite part is obtained. According to the lining layer application mode provided by the invention, the calendering sizes of the airtight layer and the transition layer can be reduced, and the production efficiency is improved; the maximum calendering width can be reduced, and the thickness of an airtight layer or a transition layer film can be controlled at the same time; and meanwhile, the maximum calendering width is reduced, so that the equipment size requirement is reduced, and the equipment cost is greatly reduced.

The invention discloses a 14-pin Nano SD high-speed transmission card holder connector, which comprises a holding piece and two rows of pin terminals embedded and formed in the holding piece, the two rows of pin terminals are symmetrically distributed and respectively positioned in the upper half region and the lower half region of the holding piece, and each row of pin terminals comprises seven pins arranged at intervals; and the middle part of each pin protrudes upwards to form a contact point in contact with the communication card. The SIM card and the Nano SD card can be compatible at the same time, high-speed transmission can be achieved, the Nano SD 2.0 protocol communication requirement is met, the universality of the mobile phone card holder is greatly improved, the market requirement is better met, the size is small, the thickness is small, and the ultrathin and miniaturized design requirement is met.

The invention discloses a circuit breaker with an automatic control function. The circuit breaker comprises a housing body. A live line mechanism and a null line mechanism are oppositely arranged in the housing body in the first direction. The live line mechanism comprises a live line conduction mechanism and a live line driving assembly. The null line mechanism comprises a null line conduction mechanism and a null line driving assembly. A motor driving assembly is used for driving the live line driving assembly and the null line driving assembly. The live line conduction mechanism and the null line conduction mechanism are arranged in the first direction in the housing body. The motor driving assembly and the null line driving assembly are oppositely arranged in the second direction and are arranged opposite to the null line conduction mechanism in the third direction. The live line driving assembly and the null line driving assembly are oppositely arranged in the first direction. According to the invention, proper layout of each assembly is finished on the premise that one set of mechanisms are omitted in parts of the mechanisms, so the whole size is not increased without deletion, and overall proper arrangement is finished.