Insulating film forming composition, preparing method thereof, silica dioxide insulating film and preparing method thereof

A technology of insulating film and composition, which is applied in the manufacture of organic insulators, plastic/resin/wax insulators, semiconductors/solid state devices, etc., and can solve problems such as unsuitable for long-term storage, poor substrate adhesion, and unsuitability

Inactive Publication Date: 2007-04-18
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the material obtained by this method has poor stability of the reaction product, is not suitable for long-term storage, and has the problem of poor adhesion to the substrate
[0008] A method of forming a low dielectric constant insulating film obtained by hydrolyzing and condensing highly branched polycarbosilane is also proposed (US-6807041), but after coating the polymer on the substrate, aging treatment with ammonia is necessary , trimethyl silylation treatment, high temperature hardening at 500°C, etc., are not suitable for actual process materials

Method used

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  • Insulating film forming composition, preparing method thereof, silica dioxide insulating film and preparing method thereof
  • Insulating film forming composition, preparing method thereof, silica dioxide insulating film and preparing method thereof
  • Insulating film forming composition, preparing method thereof, silica dioxide insulating film and preparing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 2

[0172] 52.15 g of aqueous solutions of 20% tetrapropylammonium hydroxide, 81.5 g of ultrapure water, and 470.36 g of isopropanol were weighed into a quartz flask equipped with a condenser, and stirred at 60°C. Next, after adding 26.24 g of methyltrimethoxysilane, 50.93 g of tetrapropoxysilane, and 18.82 g of polycarbosilane (10) (Mw=840) having structures shown in Table 2 below in the following proportions, at 60 The mixture was stirred at °C for 4 hours to obtain a reaction solution containing a hydrolysis condensate having a weight average molecular weight of 55,000 in terms of polystyrene. After cooling the reaction liquid to room temperature, 551.86 g of propylene glycol monopropyl ether and 35.42 g of 20% acetic acid aqueous solution were added. This reaction solution was concentrated under reduced pressure until the solid content concentration reached 10%, whereby a film-forming composition 2 was obtained.

[0173] [Table 2]

[0174]

Embodiment 3

[0176] 5.80 g of aqueous solutions of 25% tetramethylammonium hydroxide, 110.30 g of ultrapure water, and 548.08 g of ethanol were weighed into a quartz flask equipped with a condenser, and stirred at 60°C. Next, 5.70 g of dimethyldimethoxysilane, 16.15 g of methyltrimethoxysilane, 10.83 g of tetramethoxysilane, and polycarbonate having the structures shown in the following Table 3 were added continuously for 1 hour. After 3.14 g of silane (11) (Mw=1050), it stirred at 60 degreeC for 2 hours, and obtained the reaction liquid containing the hydrolysis-condensation product whose weight average molecular weight in conversion of polystyrene was 40000. After cooling the reaction liquid to room temperature, 658.38 g of propylene glycol monopropyl ether and 10.98 g of 20% acetic acid aqueous solution were added. The reaction solution was concentrated under reduced pressure until the solid content concentration reached 10%, whereby a film-forming composition 3 was obtained.

[0177] ...

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Abstract

Disclosed is a composition for forming an insulating film containing a hydrolysis-condensation product and an organic solvent which hydrolysis-condensation product is obtained through hydrolysis-condensation of a component (A), which is at least one silane compound selected from the group consisting of compounds represented by the general formulae (1)-(3) below, performed in the presence of a component (B), which is a polycarbosilane having a main chain with a structure expressed as -(Si-CH2)x- and a structure represented by the general formula (4) below, a structure represented by the general formula (5) below, a structure represented by the general formula (6) below and a structure represented by the general formula (7) below.

Description

technical field [0001] The present invention relates to a composition for forming an insulating film and a method for producing the same, a silicon dioxide-based insulating film and a method for forming the same, and more specifically, relates to the formation of an insulating film that can be suitably used for interlayer insulating films and the like in semiconductor elements A composition and its production method, and a silicon dioxide-based insulating film and its formation method. Background technique [0002] Conventionally, silicon dioxide (SiO 2 )membrane. In recent years, in order to form an interlayer insulating film having a more uniform film thickness, a coating type insulating film containing a hydrolysis product of tetraalkoxysilane called an SOG (Spin on Glass) film as a main component has also been used. In addition, along with the high integration of semiconductor devices and the like, development of interlayer insulating films with a low relative dielectr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D183/14B05D5/12B05D7/24C08G77/50C09D5/25C09D7/12C09D183/02C09D183/04C09D183/08H01B3/46H01L21/312
Inventor 秋山将宏中川恭志黑泽孝彦盐田淳
Owner JSR CORPORATIOON
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