S-band GaN MMIC low-noise amplifier

A low-noise amplifier and amplifier technology, applied in the electronic field, can solve the problems of high noise figure, small RF input signal, and insufficient gain flatness.

Pending Publication Date: 2020-06-23
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing S-band GaN MMIC low-noise amplifiers have problems such as small RF input

Method used

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  • S-band GaN MMIC low-noise amplifier
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  • S-band GaN MMIC low-noise amplifier

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Embodiment Construction

[0019] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0020] In describing the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", The orientation or positional relationship indicated by "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than Nothing indicating or implying that a referenced device or element...

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Abstract

The invention discloses an S wave band GaN MMIC low noise amplifier. The circuit structure includes a first-stage field effect transistor amplifier, an input matching network, a first-stage gate biasnetwork, a first-stage drain resistor, a first-stage drain bias network, an inter-stage matching network, a second-stage gate resistor, a second-stage field effect transistor amplifier, an output-stage matching network, a second-stage drain bias network, a second-stage drain resistor and a second-stage gate bias network are included. The negative feedback network formed by the resistor enhances the stability of the circuit, adjusts the gain of the circuit, and improves the linearity of the low-noise amplifier. Performance of large radio frequency input signals, low noise coefficient and good gain flatness in a working band of the low-noise amplifier can be realized.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to an S-band GaN MMIC low-noise amplifier. Background technique [0002] With the rapid development of wireless communication, the application of S-band in signal receivers is becoming more and more extensive, and the research on low-noise amplifiers has gradually become a hot spot. Low-noise amplifier (LNA, Low-noise Amplifier) ​​is widely used in communication systems, radar detection and electronic countermeasures, etc. The improvement of communication technology requires stricter requirements on the frequency band, gain, noise and other related characteristics of the amplifier. Monolithic Microwave Integrated Circuit (MMIC) has the characteristics of compactness, good stability, and strong anti-interference ability. The S-band GaN MMIC low-noise amplifier is used in the RF front-end, and the noise figure and gain are important for the entire circuit system. The linearity di...

Claims

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Application Information

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IPC IPC(8): H03F1/26H03F3/68
CPCH03F1/26H03F3/68
Inventor 李海鸥卓锦李杰首照宇刘兴鹏陈春明孙堂友陈永和李琦高喜傅涛张法碧李思敏陈志强
Owner GUILIN UNIV OF ELECTRONIC TECH
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