Standard SiGe bipolar complementary metal-oxide-semiconductor transistor (BiCMOS) process-based optoelectronic integrated receiver

An optoelectronic integration and receiver technology, applied in electromagnetic receivers, radiation control devices, etc., can solve the problem that photoelectric detectors are difficult to take into account the performance of speed and responsivity at the same time, optoelectronic integrated receivers have not entered the practical stage, and monolithic integrated optics are limited. The overall performance of the receiver and other issues can achieve good application prospects, enhanced functions, and high responsiveness.
CN103701533AInactive Publication Date: 2014-04-02TIANJIN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TIANJIN UNIV
Publication Date
2014-04-02
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention belongs to the fields of optical fiber communication systems and optical interconnection, and aims to achieve the advantages of small size, low cost, high reliability, rich functions and the like of monolithic integration. The invention provides a photoelectric detector compatible with a standard SiGe bipolar complementary metal-oxide-semiconductor transistor (BiCMOS) process, and a high-speed and high-sensitivity monolithic integrated optical receiver integrated with the detector. To meet the technical requirements, the standard SiGe BiCMOS process-based optoelectronic integrated receiver comprises two photoelectric detectors with completely symmetrical structures, a trans-impedence amplifier with a full differential structure, a group of sequentially cascaded full differential limiting amplifier and an output buffer stage which is used for converting differential voltage signals output by the limiting amplifier into single-end output voltage signals and providing driving force. The optoelectronic integrated receiver is mainly applied to design and manufacture of the optical fiber communication systems.
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Description

technical field

[0001] The invention belongs to the field of optical fiber communication systems and optical interconnection, and relates to a photoelectric detector compatible with silicon germanium bipolar-complementary metal oxide semiconductor (SiGe BiCMOS) technology, and a high-speed optical receiver monolithically integrating the detector. Specifically, it relates to a photoelectric integrated receiver based on a standard SiGe BiCMOS process. Background technique

[0002] With the continuous development of communication and multimedia technology, people's demand for data information continues to increase. Because optical fiber communication has the advantages of high speed and large capacity, it is widely used in trunk network. However, for user terminals, limited by the cost of optoelectronic integrated chips, it is difficult to continue to advance the "last mile" of fiber-to-the-home. Therefore, the development of low-cost, high-performance optoelectronic integrat...

Claims

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