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515 results about "Trans impedance amplifier" patented technology

Testing apparatus and method for thin film transistor display array

The present invention discloses a testing circuit and method for thin film transistor display array, for testing the yield of thin film transistor array. The testing circuit comprising: An array tester, a test panel (DUT), a sense amplifier array. The sense amplifier is composed by a plurality of trans- impedance amplifier unit and a plurality of parasitic capacitance discharge circuit unit. Every sense amplifier includes: a trans-impedance amplifier, which is implemented by an operational amplifier, two switches and an operation capacitance, the trans-impedance amplifier is used to form an integrated circuit, the output is transmitted to a sampling / hold circuit via a switch; a parasitic capacitance discharge circuit is used to form a discharge rout for the charge of the parasitic capacitance.
Owner:PRIMETECH INT CORP

Transconductance-enhancing passive frequency mixer

The invention discloses a transconductance-enhancing passive frequency mixer, which comprises a mixing stage and a biasing circuit, and further comprises a transconductance stage with a transconductance-enhancing function, a passive mixing switch pair and an enhanced load output stage, wherein the transconductance stage with a transconductance-enhancing function transforms an input radio-frequency voltage into a radio-frequency current; and frequency mixing of the radio-frequency current is achieved through the double-balance mixing switch pair, and the current after frequency mixing is transformed into a mid-frequency voltage for output through the transconductance-enhanced load output stage. As the transconductance stage uses a pre-amplifying transconductance-enhancing structure, transconductance is greatly enhanced, thus the same transconductance value can be achieved at a lower bias current, and an output mid-frequency current signal is generated after the radio-frequency current is modulated through the mixing stage. Voltage output is generated through a transresistance amplifier, and finally the mid-frequency voltage signal is obtained. As the transresistance amplifier uses a transconductance-enhancing structure, input impedance is reduced, and current utilization efficiency and port isolation are improved. The transconductance-enhancing passive frequency mixer provided by the invention has the characteristics of low power consumption, high conversion gain, good port isolation and the like.
Owner:SOUTHEAST UNIV WUXI CAMPUS

Circuit for measuring outburst mode optical signal power

The invention discloses a burst mode optical signal power measuring circuit which comprises a photoelectric detector power supply, a mirror image current source and a subsequent circuit. The subsequent circuit is divided into a signal passage part and an optical power burst detecting part by the mirror image current source, wherein, in the signal passage part, optical current generates a burst detection signal by the photoelectric detector via a trans-impedence amplifier and a burst detection circuit, and the burst detection signal is used for triggering a time sequence generation circuit to generate a control time sequence for maintaining sampling and carrying out digital-to-analog conversion; in the optical power burst detection part, an amplifying circuit converts the mirror image current into a voltage signal; therefore, a sampling maintaining circuit and a digital-to-analog conversion circuit which are connected with the time sequence generation circuit can finish the burst detection of optical power under the control of the control time sequence. The burst mode optical signal power measuring circuit generates the mirror image current forming a proportion with the average optical current of the photoelectric detector by the mirror image current source, realizes the detection to the burst mode optical power under the control of the control time sequence, and can measure burst optical signal power with the length of hundreds of nanoseconds.
Owner:SUPERXON (CHENGDU) TECH LTD

Broadband radio frequency receiver

The invention relates to a broadband radio frequency receiver and belongs to the technical field of wireless communication electronics. The broadband radio frequency receiver comprises a radio frequency front end module, an analog base band module and a digital baseband module; a zero-intermediate frequency receiver structure with orthogonal down conversion frequency is adopted; a radio frequency input signal sequentially passes through a low noise amplifier, a passive mixer, a trans-impedance amplifier, a low pass filter, a gain variable amplifier, an analog-digital converter, a decimation filter and a finite impulse response (FIR) filter; multiple radio frequency input signals within 50MHz to 6.3GHz can be processed by switching a low noise amplifier group and configuring local oscillation frequency, a sampling clock, filter bandwidth and the like; an external band-pass filter is not needed, so that the complexity of the system is reduced and the integration level is improved; a working frequency band is widened, and the flexibility and the reliability of the system are improved; in addition, the dynamic range is widened by double loop automatic grain control of a peak detection circuit and a power detection circuit. The broadband radio frequency receiver can be designed into an IP (Internet Protocol) core monolithic integration or can be in an external cascade.
Owner:BEIJING MXTRONICS CORP +1

Micro-mechanical resonant electrometer with ultra-high sensitivity

The invention, which belongs to the MEMS field, discloses a micro-mechanical resonant electrometer with ultra-high sensitivity. The method comprises a mechanical structure design method of an electrometer header and a testing circuit design method. Compared with the prior art using a movable resonator charge input polar plate, the mechanical structure design enables the conversion efficiency between the electrostatic force and the axial stress to be improved; and with a micro-mechanical lever, the electrostatic force increases to improve mechanical sensitivity. When an external charge is inputted, rigidity disturbance on a resonator I increases and thus the localization phenomenon of the mode becomes dramatic. Meanwhile, the two provided resonators with different structures employ differential detection structures; the differential amplification circuit is used for detecting the amplitudes of the resonators and eliminating feed-through signals, so that the signal to noise ratio of the detection signal can be improved. In terms of the testing circuit design, a closed-loop testing plane is employed. To be specific, a signal at a detection electrode passes through a trans-impedance amplifier, a subtracter, a band-pass filter and a comparator and then is loaded at an alternating-current drive electrode to form a closed loop; rectification and filtering are carried out on two paths of outputs of the subtracter and dividing is carried out to obtain a direct-current voltage signal reflecting an amplitude ratio of two resonators. With a closed-loop drive detection circuit, the amplitude and frequency noise of the resonator can be reduced.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

Low noise trans-impedance amplifiers based on complementary current field-effect transistor devices

The present invention relates to a novel and inventive compound device structure for a low noise current amplifier or trans-impedance amplifier. The trans-impedance amplifier includes an amplifier portion, which converts current input into voltage using a complimentary pair of novel n-type and p-type current field-effect transistors (NiFET and PiFET) and a bias generation portion using another complimentary pair of NiFET and PiFET. Trans-impedance of NiFET and PiFET and its gain may be configured and programmed by a ratio of width (W) over length (L) of source channel over the width (W) over length (L) of drain channel (W / L of source channel / W / L of drain channel).
Owner:CIRCUIT SEED LLC

400 Gbps hot-plug high-speed optical transceiver module

The invention provides a 400 Gbps hot-plug high-speed optical transceiver module which is suitable for the optical communication technical field. The 400 Gbps hot-plug high-speed optical transceiver module comprises an optical interface unit, a photoelectric transceiver unit and an electrical interface unit; the photoelectric transceiver unit is used for achieving the functions of photoelectric conversion and high-speed electrical signal processing through a photoelectric transceiver chip; the internal working process of the photoelectric transceiver chip comprises receiving an electrical signal input through the electrical interface unit by a transmitting terminal data clock recovery circuit, loading the electrical signal to a laser after the pretreatment through a driving circuit, converting the high-speed electrical signal into a high-speed optical signal through the laser, reusing the high-speed optical signal through a wavelength division multiplexer to be output, reusing the received optical signal into a 16-channel optical signal through a wavelength division demultiplexer to be transmitted to an optical detector and transmitting the 16-channel optical signal to a trans-impedance amplifier and a receiving terminal data clock recovery circuit after photoelectric conversion to be processed. According to the 400 Gbps hot-plug high-speed optical transceiver module, the factors such as the cost, the transmission loss, the chromatic dispersion and the size are considered to select different optical transceiver modules and accordingly the long-distance single-mode optical fiber transmission or the short-distance multimode transmission is implemented.
Owner:WUHAN TELECOMM DEVICES

High-gain and low-noise differential trans-impedance amplifier

The invention provides a high-gain and low-noise differential trans-impedance amplifier. The high-gain and low-noise differential trans-impedance amplifier comprises a current mirror, an adjusting type common-emitter and common-base trans-impedance amplifier and an output common-source amplifier, wherein the adjusting type common-emitter and common-base tarns-impedance amplifier comprises a common-base amplifying unit and a negative feedback common-emitter amplifying unit; the negative feedback common-emitter amplifying unit is arranged between an emitter and a base of the common-base amplifying unit and serves as a negative feedback channel; input current is copied by the current mirror in an equal proportion manner; the current mirror provides bias voltage for the common-base amplifying unit and the negative feedback common-emitter amplifying unit; the output common-source amplifier is connected between an output end of the adjusting type common-emitter and common-base trans-impedance amplifier and an output end of the high-gain and low-noise differential trans-impedance amplifier; and trans-impedance gain is increased. By the high-gain and low-noise differential tarns-impedance amplifier, received weak signals are amplified in a high-gain and low-noise manner, bandwidth is large, and a dynamic range of inputted current signals are reasonably set; and the high-gain and low-noise differential tarns-impedance amplifier has the advantages of easiness in design and monolithic integration.
Owner:XIDIAN UNIV

Transresistance amplifier with received signal strength indication (RSSI) function

The invention discloses a transresistance amplifier with a received signal strength indication (RSSI) function. The transresistance amplifier is characterized in that an image current source and a second current voltage switching circuit are additionally arranged in an existing transresistance amplifier, so that an image current signal is generated and then converted into an image voltage signal used as an RSSI signal for output, thus the power loss brought by a differential amplifier device is eliminated; simultaneously the transresistance value of the second current voltage switching circuit ranges from 200ohm to 600ohm, thus the condition that the accuracy requirement of optical power detection cannot be met due to RSSI signal saturation caused by overlarge optical power can be prevented; and a BJT (bipolar junction transistor) image current source of a high-speed bandwidth small-signal triode is also used, so that the industrial cost is low while the speed requirement of signal high-speed transmission can be met; and finally the transresistance of a first current voltage switching circuit with a resistance value ranging from 800ohm to 2000ohm ensures that the signal-to-noise ratio of the differential amplifier is higher.
Owner:SUPERXON (CHENGDU) TECH LTD

Signal intensity detection circuit of trans-impedance amplifier

The invention provides a signal intensity detection circuit of a trans-impedance amplifier. The signal intensity detection circuit obtains a sampled signal from the output photocurrent IPD (Insertion Phase Delay) of a photoelectric diode (PD), and simultaneously separates the high-frequency component and the low-frequency component of the sampled signal from each other; the high-frequency component IAC enters a main trans-impedance amplifier module through a coupling capacitor C1, while the low-frequency component IDC is the signal intensity indication of the trans-impedance amplifier; and the main trans-impedance amplifier module achieves the trans-impedance amplification function of amplifying a tiny photocurrent to a voltage signal. The signal intensity detection circuit provided by the invention directly samples the input photocurrent signal and the detection result obtained in this way is quite correct; an adaptive nonlinear sampling circuit is adopted so that the detection accuracy is improved; simultaneously, the dynamic range of the input photocurrent is very wide; and the high-frequency component is separated from the photocurrent signal and fed into the main trans-impedance amplifier module; and therefore, the influence of the low-frequency component on the direct-current working point of the main trans-impedance amplifier module in the traditional structure is avoided.
Owner:武汉昊昱微电子股份有限公司

High-speed CMOS monolithic integration light receiver front end of cross coupling structure

InactiveCN104539373AHigh bandwidthImprove response isolationElectromagnetic receiversEngineeringVIT signals
The invention discloses a high-speed CMOS monolithic integration light receiver front end of a cross coupling structure. The high-speed CMOS monolithic integration light receiver front end comprises a photoelectric detector of a completely-symmetric structure, a trans-impedance amplifier of a difference structure, a direct current excursion eliminating unit, a three-stage sequence cascaded difference limiting amplifier and an output buffer stage; the trans-impedance amplifier of the difference structure is used for converting current signals output by the photoelectric detector into voltage signals and conducting preliminary amplification; the direct current excursion eliminating unit is used for eliminating direct current excursion led in by non-balanced signals at the input end of the trans-impedance amplifier and enables common mode levels at the output end of the trans-impedance amplifier to be coincident; the three-stage sequence cascaded difference limiting amplifier is used for amplifying the voltage signals output by the trans-impedance amplifier to be at the voltage level needed by a digital processing unit. Through the adoption of the cross coupling structure, the noise in-phase counteraction technology and the parallel type active inductor design, a high-speed and high-sensitivity standard CMOS monolithic integration light receiver can be achieved.
Owner:TIANJIN UNIV

LED display screen indoor wireless communication system based on LiFi technology

ActiveCN105472779AThe way of use remains unchangedReliable high-speed and convenient wireless Internet accessNetwork topologiesClose-range type systemsThe InternetCommunication device
The invention discloses an LED display screen indoor wireless communication system based on LiFi technology The LED display screen indoor wireless communication system comprises indoor LED lamps and LED display screens disposed in the illumination range of the LED lamps. A LiFi optical signal transmitting module is disposed in each of the LED lamps, and a main control circuit, a communication signal detection circuit, a circuit for transceiving wireless signals in various wavebands, and a LiFi optical signal receiving circuit are disposed in each of the LED display screen. Each of the main control circuits is connected with the corresponding communication signal detection circuit, the corresponding circuit for transceiving the wireless signals in various wavebands, and the corresponding LiFi optical signal receiving circuit. Each of the LiFi optical signal transmitting modules is connected with a LiFi wireless communication Internet signal source. Each of the LiFi optical signal transmitting modules of the LED lamps comprises a photoelectric communication device, which comprises an LED driver, an LED lamp bead, a PIN photoelectric diode, and a trans-impedance amplifier. A LiFi base station comprises an optical link, and is used to establish connection between an access end and an Internet end, and can be used for processing the electric signals, receiving and/or transmitting the electric signals.
Owner:福建晶彩光电科技股份有限公司
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