Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

305 results about "Conversion gain" patented technology

Shunting-type isothermal sulfur-tolerant conversion process and equipment thereof

ActiveCN101704513ASatisfy conversion rate requirementsMeet the requirements of adiabatic conversion control temperature riseHydrogenChemical industryShunt typesSulfur
The invention discloses a shunting-type isothermal sulfur-tolerant conversion process. The process comprises the following steps: shunting raw coal gas from exterior into at least two parts; leading overheat stream in the first part of the raw coal gas to increase the temperature to 200-300 DEG C; and then entering a first-stage conversion reaction step to carry out a conversion reaction and generate first conversion gas; and conveying the other part of the raw coal gas to next-stage conversion reaction step to carry out a conversion reaction. The catalyst bed of a shift converter has the advantages of stable temperature, simple control, convenient operation and low output CO content. The invention has the advantages of short conversion flows, few equipment, reduced resistance, great byproduct stream amount, high overheat temperature, stream pressure and heat recovery rate, and the like, thereby achieving the aims of reducing conversion stages, equipment number and resistance fall, decreasing investment, having great byproduct stream amount and high overheat temperature, stream pressure and heat recovery rate, reducing conversion stream consumption and outward wastewater discharge, protecting the environment and easily maximizing the device equipment. The invention also discloses shunting-type isothermal sulfur-tolerant conversion equipment used by the process.
Owner:SHANGHAI INT ENG CONSULTING

Fusion structure of LNA (low noise amplifier) and frequency mixer

The invention relates to a fusion structure of an LNA and a frequency mixer. The fusion structure comprises a low noise transconductance amplifier stage, a switching frequency mixing stage and a resistance loading stage, wherein the low noise transconductance amplifier stage is divided into two parts, a first part adopts a cross coupling main-auxiliary noise offset technology, a main transconductance pipe adopts a cross coupling structure so as to double an equivalent transconductance value, an auxiliary transconductance pipe provides an appropriate transconductance value, and the noise of the main transconductance pipe is offset through the main-auxiliary structure; and a second part adopts a common-source-level structure, then gain is provided, direct current flowing through switching tubes is reduced, and flicker noise is reduced. The switching frequency mixing stage modulates radio-frequency current output from the low noise transconductance amplifier stage and outputs intermediate-frequency current, and source electrodes of two groups of switching tubes are connected through an inductor, so that the flicker noise is reduced, and the conversion gain is improved. The resistance loading stage adopts an RC (current limiting resistor) lowpass filtering network to convert the intermediate-frequency current into an intermediate-frequency voltage signal for outputting. The fusion structure of the LNA and the frequency mixer has the characteristics of low noise, high gain and low power consumption.
Owner:SOUTHEAST UNIV

CMOS image sensor with global shutter, rolling shutter, and a variable conversion gain, having pixels employing several BCMD transistors coupled to a single photodiode and dual gate BCMD transistors for charge storage and sensing

The invention describes a solid-state CMOS image sensor array and discloses image sensor array pixels with global and rolling shutter capabilities that utilize multiple BCMD transistors for a single photodiode, for charge storage and sensing. Thus, the valuable pixel area saved by employing the BCMD transistor for charge storage and sensing is used by placing several BCMD transistors coupled to one photodiode. This increases the Dynamic Range (DR) of the sensor, since the same photodiode can integrate charge for different integration times, both long and short. This allows sensing of two different image signals from a single pixel without saturation, a low level signal with long integration time followed by a high level signal with short integration time. The signal processing circuits located at the periphery of the array can then process these signals into a single Wide Dynamic Range (WDR) output. Further disclosed is an image sensor array with pixels that use BCMD transistors for charge storage and sensing having multiple concentric gates, which allows changing the conversion gain of the BCMD transistors by applying various biases to the gates. Variable conversion gain is a useful feature when building WDR sensors since low conversion gain and high well capacity allows detection of high level signals and the same structure can be used to detect, at the same time, low level signals with high conversion gain and thus low noise.
Owner:SEMICON COMPONENTS IND LLC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products