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114results about How to "Improve conversion gain" patented technology
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High dynamic range pixel amplifier
ActiveUS20050224843A1Increase capacitanceReduce capacitanceTelevision system detailsTelevision system scanning detailsCapacitanceEngineering
A pixel cell with increased dynamic range is formed by providing a floating diffusion region having a variable capacitance, controlled by at least one gate having source and drain regions commonly connected to the floating diffusion region. The gate has an intrinsic capacitance which, when the gate is activated, is added to the capacitance of the floating diffusion region, providing a low conversion gain readout. When the gate is off, the floating diffusion region capacitance is minimized, providing a high conversion gain readout. The gate may also be selectively switched to mid-level. At mid-level, a mid-level conversion gain, which is between the high and low conversion gains, readout is provided, but the gate still provides some capacitance to prevent the floating diffusion region from saturating.
Owner:APTINA IMAGING CORP
Pixel structure with multiple transfer gates
ActiveUS20120002089A1Improve dynamic rangeComplex implementationTelevision system detailsTelevision system scanning detailsEngineeringExposure period
A pixel structure comprises a photo-sensitive element for generating charge in response to incident light. A first transfer gate is connected between the photo-sensitive element and a first charge conversion element. A second transfer gate is connected between the photo-sensitive element and a second charge conversion element. An output stage outputs a first value related to charge at the first charge conversion element and outputs a second value related to charge at the second charge conversion element. A controller controls operation of the pixel structures and causes a pixel structure. The controller causes the pixel structure to: acquire charges on the photo-sensitive element during an exposure period; transfer a first portion of the charges acquired during the exposure period from the photo-sensitive element to the first charge conversion element via the first transfer gate; and transfer a second portion of the charges acquired during the exposure period from the photo-sensitive element to the second charge conversion element via the second transfer gate.
Owner:CMOSIS
Method for constructing radio frequency front end of multi-mode multi-band satellite navigation receiver and module thereof
InactiveCN102096079ASimple and reliable compositionReduce common mode noiseBeacon systems using radio wavesSatellite radio beaconingMulti bandDifferential signaling
The invention discloses a configurable multi-mode multi-band satellite navigation receiving method and a radio frequency front end module constructed by the method. The front end module can receive signals of satellite navigation and positioning systems such as a global positioning system (GPS), the Big Dipper, a Galileo positioning system and a global navigation satellite system (Glonass), and comprises a configurable low-noise amplifier (LNA) with a buffer and an active balun, a folding passive mixer with a configurable frequency synthesizer, a configurable multi-mode filter, an automatic gain control (AGC) amplifier, a direct-current bias circuit, and a multi-mode multi-band program controlled and coded on-off control word from a receiving system. The radio frequency front end module can meet the requirement of multi-band multi-mode work through the control word programmed by the receiving system, has a simple and reliable structure, does not need complicated time division multiplexing control system and off-chip module, has low cost and high flexibility, and improves the noise performance of the radio frequency front end of the whole receiver and multi-mode multi-band signal processing capacity; and a one-channel signal is input into the module, and the module outputs a two-channel differential signal. The receiver can be used for receiving and processing multi-mode satellite navigation signals asynchronously, and receiving and processing satellite navigation signals with the required mode in different time intervals according to the requirement.
Owner:杭州中科微电子有限公司
Schottky barrier diode
InactiveUS20060086997A1Reduce noiseCost reductionSemiconductor devicesSemi insulatingHigh concentration
A buffer layer made of i-GaAs not doped with impurities, and an n+ GaAs layer doped with a high-concentration of n-type impurities are stacked in the order named on a semi-insulating GaAs substrate. An n− GaAs layer doped with a low-concentration of n-type impurities is partially located on the n+ GaAs layer. Cathode electrodes are located in opening regions in which the n− GaAs layer is not present on the n+ GaAs layer. An anode electrode is located on the n− GaAs layer. The n+ GaAs layer has a carrier concentration of 5×1018 cm−3, and is in ohmic contact with the cathode electrodes. The n− GaAs layer has a carrier concentration of 1.2×1017 cm−3, and is in Schottky contact with the anode electrode.
Owner:MITSUBISHI ELECTRIC CORP
High dynamic range pixel amplifier
ActiveUS7091531B2Increase capacitanceReduce capacitanceTelevision system detailsTelevision system scanning detailsCapacitanceAudio power amplifier
A pixel cell with increased dynamic range is formed by providing a floating diffusion region having a variable capacitance, controlled by at least one gate having source and drain regions commonly connected to the floating diffusion region. The gate has an intrinsic capacitance which, when the gate is activated, is added to the capacitance of the floating diffusion region, providing a low conversion gain readout. When the gate is off, the floating diffusion region capacitance is minimized, providing a high conversion gain readout. The gate may also be selectively switched to mid-level. At mid-level, a mid-level conversion gain, which is between the high and low conversion gains, readout is provided, but the gate still provides some capacitance to prevent the floating diffusion region from saturating.
Owner:APTINA IMAGING CORP
Transconductance-enhancing passive frequency mixer
InactiveCN102412786AImprove linearityReduce power consumptionActive element networkMulti-frequency-changing modulation transferenceFrequency mixerHemt circuits
Owner:SOUTHEAST UNIV WUXI CAMPUS
Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it
ActiveUS20090221259A1Improve signal-to-noise ratioReduce deteriorationTransmissionMulti-frequency-changing modulation transferenceLow noiseCommunication unit
The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.
Owner:HITACHI LTD
Solid-state image pickup device with an improved output amplifier circuitry
InactiveUS8289425B2Low conversion gainImprove featuresTelevision system detailsTelevision system scanning detailsLight sensingAudio power amplifier
Owner:SONY CORP
Single-Exposure High Dynamic Range Sensor
ActiveUS20180366513A1120 dB luminance rangeImprove conversion gainTransistorTelevision system detailsUltrasound attenuationSemiconductor materials
A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.
Owner:OMNIVISION TECH INC
High-linearity folding image mixer
ActiveCN102075145AImprove linearityImprove conversion gainModulation transference balanced arrangementsPower flowIntermediate frequency
The invention relates to a high-linearity folding image mixer which is of a structure characterized in that a double-balanced switch pair is embedded in a current mirror. Under the combined operation of the current mirror and the double-balanced switch pair, an intermediate frequency current signal is generated from a transconductance radio frequency current after the frequency conversion, wherein the size of the intermediate frequency current signal has an image proportional relation with the radio frequency current; and then an output voltage is formed on a load resistor by the current. Dueto the proportional replicating property of the current mirror, the mixer has better linearity than that of a Gilbert mixer of a folding structure. In addition, the traditional mixers are mainly of astacked structure of transconductance, mixing switch pair and load phase from a power supply to the ground. In the mixer provided by the invention, a parallel cascade of transconductance, mixing cascade and load phase is realized, and the mixer is suitable for low supply voltage applications.
Owner:东南大学无锡分校
A low-voltage frequency mixer
InactiveCN101188402ALower requirementReduce power consumptionModulation transference balanced arrangementsBeacon systems using radio wavesLow noiseEngineering
The invention provides a low-voltage CMOS folding co-source co-grid mixer. The mixer includes the following parts: a pair of transconductance poles composed of NMOS tubes, tow pairs of switch poles composed of NMOS tubes, a pair of load poles composed of NMOS, and a current source. In the structure of the mixer circuit, the transconductance poles are connected with the switch poles in a co-source co-grid method. The invention solves the problems of the high power supply high voltage caused by the overlapping of the transconductance poles and the switch poles of the traditional Gilbert mixer, and the compromise design between the high transconductance and the high linearity of the transconductance poles and the low noise of the switch poles. The invention can be used in the application of the deep submicron RF CMOS circuit, in particular in the design developing of the satellite navigation double-system compatible receiver radio frequency integrated circuit. The invention has bright application prospect in both the military and the civilian fields.
Owner:BEIHANG UNIV
Image-rejection mixer having high linearity and high gain
ActiveUS7043220B1Improve linearitySufficient headroomModulation transferenceOscillations generatorsLoad resistanceDc current
An integrated semiconductor image-rejection mixer having high linearity and high gain. In addition to the components of a classic image-rejection architecture, the present mixer has a high-frequency current-diverting stage that permits the operation of the output stage with high conversion gain and sufficient headroom for good linearity, even in cases where the supply voltage is relatively low (such as 3 V). The conversion gain of the mixer and its image-rejection performance can be changed by changing the load resistances and the elements of the output polyphase network, with minor effects on linearity and no change in power consumption or DC levels. The power consumption of the image-rejection mixer is low because no additional DC current is required for buffers or amplifier stages.
Owner:MAXIM INTEGRATED PROD INC
Novel terahertz band broadband monolithic integrated subharmonic mixer
ActiveCN107196608AImprove conversion gainImprove isolationModulation transference balanced arrangementsIntermediate frequencyBand-pass filter
The invention provides a novel terahertz band broadband monolithic integrated subharmonic mixer comprising radio frequency and a local oscillation signal loading coupler, a diode pair composed of two diodes reversely connected in parallel, an intermediate frequency output amplifier circuit and a low pass filter, wherein a radio frequency signal is filtered by a first coplanar waveguide through a radio frequency band stop filter with a 1 / 2 radio frequency signal wavelength and is imported by a second coplanar waveguide onto an intermediate pin of the diode pair; and a local oscillation signal is filtered by a third coplanar waveguide through a local oscillation band-pass filter with a 1 / 4 local oscillation signal wavelength and is imported by the second coplanar waveguide onto the intermediate pin of the diode pair to be mixed with the radio frequency signal. By adoption of the scheme, the ultra wide working frequency range of the terahertz monolithic integrated subharmonic mixer is realized, and the scheme has the performance indexes of low frequency conversion loss, low manufacturing cost and high port isolation, and the like.
Owner:CHINA ELECTRONIS TECH INSTR CO LTD
Frequency conversion mixer
InactiveUS8018267B2Improve conversion gainImprove noise characteristicsModulation transferenceComputations using contact-making devicesFrequency conversionIntermediate frequency
Provided is a frequency conversion mixer. The frequency conversion mixer includes a transconductance stage, a switching stage, a load stage, a current bleeding circuit, and a bias stage. The transconductance stage receives an RF signal, and outputs a current corresponding to a voltage of the RF signal. The switching stage switches the current which is outputted from the transconductance stage in response to a local oscillation signal, for frequency conversion the RF signal into an intermediate frequency (IF) signal. The load stage is connected between the switching stage and a supply voltage terminal. The current bleeding circuit is connected parallel with the switching stage, especially, embodying inverter structure with transconductance stage to get not only current bleeding effect but also current reuse effect, and one resonant inductor for reducing noise which is generated in parasitic capacitance at node between transconductance stage and switching stage. The bias stage is connected between the transconductance stage and a ground terminal, and has the switched biasing technique for allowing not only the stable bias current but also lowering the flicker noise.
Owner:ELECTRONICS & TELECOMM RES INST +1
Frequency converter and radio communication apparatus
InactiveUS7107035B2Improve conversion gainReduce noiseModulation transference by semiconductor devices with minimum 2 electrodesTransmission noise suppressionLow noiseFrequency changer
A frequency converter comprises an impedance matching unit connected to a current switching stage and a transconductance amplifier stage. The impedance matching unit has an impedance for conjugate power match. For example, the impedance matching unit is a parallel resonant circuit that includes an inductor and a capacitor that are formed as an integrated circuit. Thus, the frequency converter that has high conversion gain and low noise is obtained.
Owner:KK TOSHIBA
Pixel structure with multiple transfer gates
ActiveUS9001245B2Small capacitanceImprove dynamic rangeTelevision system detailsTelevision system scanning detailsExposure periodElectrical and Electronics engineering
A pixel structure comprises a photo-sensitive element for generating charge in response to incident light. A first transfer gate is connected between the photo-sensitive element and a first charge conversion element. A second transfer gate is connected between the photo-sensitive element and a second charge conversion element. An output stage outputs a first value related to charge at the first charge conversion element and outputs a second value related to charge at the second charge conversion element. A controller controls operation of the pixel structures and causes a pixel structure. The controller causes the pixel structure to: acquire charges on the photo-sensitive element during an exposure period; transfer a first portion of the charges acquired during the exposure period from the photo-sensitive element to the first charge conversion element via the first transfer gate; and transfer a second portion of the charges acquired during the exposure period from the photo-sensitive element to the second charge conversion element via the second transfer gate.
Owner:CMOSIS
High-isolation broadband millimeter wave mixer applied to 5G communication
InactiveCN110535441APrevent leakageHigh Q valueMulti-frequency-changing modulation transferenceTransformerHigh isolation
The invention belongs to the technical field of wireless communication, and relates to a mixer, in particular to a high-isolation broadband millimeter wave mixer applied to 5G communication, which comprises a transconductance stage unit 1, an electromagnetic coupling unit 2, a switch stage unit 3, a load stage unit 4 and a buffer stage unit 5. According to the electromagnetic coupling type common-gate structure mixer based on the CMOS technology, the common-gate input transconductance stage is adopted, system-level design is facilitated, and broadband matching can be achieved without an extramatching network; the transformer network and the standard inductor LP introduced in the middle can counteract the interstage parasitic capacitance, so that the noise is reduced, the gain is improved,the differential inductor LS can be matched with and form feedback requirements, and the gain is further improved; and meanwhile, the circuit structure is symmetrical, so that the circuit structure can be well symmetrical when an actual layout is implemented, thereby being beneficial to the isolation of the mixer.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Adjustable negative resistance structure-based multimode multi-channel mixer
InactiveCN103236821AImprove conversion gainReduce flicker noiseModulation transference by semiconductor devices with minimum 2 electrodesIntermediate frequencyEngineering
The invention provides an adjustable negative resistance structure-based multimode multi-channel mixer, which comprises a radio frequency input circuit, an adjustable negative resistance circuit, a digital control capacitor array circuit and a double-balanced differential structure circuit, wherein two input ports of the radio frequency input circuit are connected with radio frequency signals RF+ and RF-, and an output port of the radio frequency input circuit is directly connected with ports RFout+ and RFout-; the negative resistance size of the adjustable negative resistance circuit is controlled by two levels Vctrll and Vctrl, and an output end of the adjustable negative resistance circuit is connected with the RFout+ and the RFout-; an input port of the digital control capacitor array circuit is controlled by a digital signal, and two output ports of the digital control capacitor array circuit are connected with the RFout+ and the RFout-; and radio frequency current signals are input into the double-balanced differential structure circuit through the RFout+ and the RFout-, and are mixed with local oscillation signals LO+ and LO- to output intermediate-frequency signals IF+ and IF- to be then input into a rear-end module. By the adjustable negative resistance circuit, the equivalent parallel resistance of a capacitor array is eliminated, a noise coefficient is reduced, the gain of an active mixer is improved, the working frequency of the mixer can be controlled by a digital end, and the requirements of a broadband multi-channel system are met.
Owner:UNIV OF SCI & TECH OF CHINA
Signal frequency-mixing method based on passive mixer and zero intermediate frequency receiver
InactiveCN101867346ASimple structureReasonable designModulation transferenceTransmissionState of artIntermediate frequency
The embodiment of the invention discloses a signal frequency-mixing method based on a passive mixer, comprising the following steps: a received radio frequency signal is filtered and amplified to obtain an amplifying signal; the orthogonal difference local oscillating signal with 25 percent of duty cycle is utilized to drive the passive mixer, the amplifying signal and the orthogonal difference local oscillating signal with 25 percent of duty cycle of the passive mixer are mixed to obtain a mixed signal; in the method, the passive mixer only has one conduction branch circuit at a certain time, total current can not be split and passes through an I path or a Q path totally, thereby overcoming the technical disadvantages that the conversion gain is reduced owning to conduction of the I pathand the Q path of the mixer at orthogonal curve overlapping moment of the local oscillating signal with 50 percent of duty cycle in the prior art, and the conversion gain can be improved under the condition of the same conversion efficiency; meanwhile, the signal frequency-mixing method leads difference waveforms of the local oscillating wave form not to be overlapped, so as to weaken the effect of twinkling noise of a signal channel.
Owner:广州市广晟微电子有限公司
Current reuse high linearity folding current mirror mixer
InactiveCN102522954AImprove linearityImprove conversion gainModulation transference balanced arrangementsCapacitanceIntermediate frequency
The invention discloses a current reuse high linearity folding current mirror mixer. A double balanced frequency mixing switch pair is embedded into a current mirror, under common effect of the current mirror and the double balanced switch pair, radio frequency current of a transconductance grade generates an intermediate frequency current signal after frequency conversion, amplitude is consistent with the radio frequency current of the transconductance level, and output voltage is formed on a load resistor. According to the structure based on the current mirror, linearity deterioration of a traditional foldable Gilbert mixer caused by cascade is avoided, simultaneously, input and output static bias current of the current mirror are reused, and an inductance capacitor parallel network is used to realize isolation of a radiofrequency signal. According to the series connected gate tube, on one hand, isolation of an output terminal intermediate frequency signal from a radio frequency transconductance grade output terminal is realized, on the other hand, voltage fluctuation of a current mirror output terminal is stabilized, and accuracy of current mirror duplication is raised. The input and output static bias current of the current mirror is injected to the transconductance grade, current utilization efficiency is raised, and power consumption is reduced.
Owner:东南大学无锡分校
Ultralow consumption current multiplexing mixer based on substrate bias
ActiveCN102611392AReduce bias currentHigh currentModulation transference by semiconductor devices with minimum 2 electrodesLinearityP channel
The invention discloses an ultralow consumption current multiplexing mixer based on substrate bias. The mixer comprises the following parts: a transconductance grade consisting of a pair of NMOS (N-channel Metal Oxide Semiconductor) pipes and a pair of PMOS (P-channel Metal Oxide Semiconductor) pipes, a switch grade consisting of two pairs of NMOS pipes, and a load grade consisting of resistors. The transconductance grade of the mixer utilizes a self-bias complementary transconductance structure and forms a folding structure with the switch grade to greatly reduce voltage of a power supply; substrates of all the MOS pipes in a circuit are additionally provided with fixed bias voltage to reduce threshold voltage of the MOS pipe and realize the design of ultralow voltage ultralow power consumption; and through a current multiplexing technique, the noise performance of the circuit is modified, and the conversion gain and the linearity are improved. The ultralow consumption current multiplexing mixer based on the substrate bias, disclosed by the invention, can be applied to deep submicron radio frequency CMOS (Complementary Metal Oxide Semiconductor) integrated circuits and can be widely applied to electronic systems in the aerospace field.
Owner:BEIHANG UNIV
Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it
ActiveUS8121579B2Improve signal-to-noise ratioReduce deteriorationTransmissionMulti-frequency-changing modulation transferenceLow noiseLow voltage
Owner:HITACHI LTD
High-linearity frequency mixer in radio frequency identification
InactiveCN102545786AImprove linearityImprove conversion gainModulation transferenceLoad circuitCapacitance
The invention discloses a high-linearity frequency mixer in radio frequency identification. The high-linearity frequency mixer comprises a load circuit, a switching circuit and a transconductance circuit, wherein the switching circuit is connected with the load circuit, and the joint of the switching circuit and the load circuit is provided with a signal output end; the switching circuit comprises a first current path; the transconductance circuit comprises two input transconductance pipes which are connected in parallel; each transconductance pipe is connected to the first current path; the signal input end of each input transconductance pipe is respectively connected with a bias resistor, and the bias resistor of each input transconductance pipe is respectively connected with a bias voltage; and the signal input end of each transconductance pipe is further respectively connected with an input blocking capacitor, and each input blocking capacitor is connected with a radio frequency signal. The high-linearity frequency mixer disclosed by the invention can be used for improving the linearity of the frequency mixer, improving the capacity of processing large signals and further improving the conversion gain of the frequency mixer.
Owner:SHANGHAI HUAHONG INTEGRATED CIRCUIT
Back side illumination image sensor and a process thereof
ActiveUS20110169055A1Increase overlapAccelerate the accumulation processTransistorSolid-state devicesSemiconductorImage sensor
A process and structure of a back side illumination (BSI) image sensor are disclosed. An n-type doped region is formed in a substrate, and a transfer gate is formed on top of the semiconductor substrate. A p-type doped region is formed in the n-type doped region either using the transfer gate as a mask or is non-self aligned formed.
Owner:HIMAX IMAGING LIMITED
Return-type current-reuse mixer
InactiveUS20130300490A1Simple circuit structureReduce power consumptionModulation transference balanced arrangementsComputing operation arrangementsIntermediate frequencyFrequency mixer
A return-type current-reuse mixer having a transconductance / amplification stage, a mixing stage, and a high-pass and a low-pass filter network. The transconductance / amplification stage has a current-reuse CMOS topology wherein an input frequency signal is converted into a frequency current, low-frequency components are removed from the frequency current by the high-pass filter network, the frequency current is fed into the mixing stage, modulation occurs in the mixing stage, and then an intermediate-frequency signal is generated and output. Once high-frequency components are removed from the intermediate-frequency signal by the low-pass filter network, the intermediate-frequency signal is sent again for input into the transconductance / amplification stage, then amplified in the transconductance / amplification stage and output. The mixer transconductance / amplification stage employs a current-reuse technique. The input frequency and the output intermediate-frequency signal share a common transconductance / amplification stage. The mixer reduces power consumption, simplifies the circuit topology, and provides high conversion gain.
Owner:SOUTHEAST UNIV
Current multiplying self-biasing current multiplexing passive frequency mixer
ActiveCN106301228ALower input impedanceImprove load resistanceModulation transference balanced arrangementsCapacitanceLow voltage
The invention discloses a current multiplying self-biasing current multiplexing passive frequency mixer which comprises a self-biasing input transconductance stage, a passive local oscillator switch and a low voltage transimpedance amplifier. The self-biasing input transconductance stage is provided with a self-biasing transconductance stage combined with a capacitive coupling current mirror. On one hand, transconductance current and the transimpedance amplifier are multiplexed. On the other hand, the bias current of the transimpedance amplifier can be precisely fixed. An additional differential pair is introduced in the low voltage transimpedance amplifier. The source of a common-gate tube is equivalent to virtual ground under a transconductance enhancement circuit. A transconductance tube in the differential pair replicates the current of the common-gate tube, and the current is injected into a load. Down-converted current is multiplied. Compared with a conventional passive frequency mixer, the current multiplying self-biasing current multiplexing passive frequency mixer provided by the invention has the advantages that the power supply voltage and bias current are reduced simultaneously; higher efficiency is realized; the conversion gain is improved; and the noise performance is improved.
Owner:SOUTHEAST UNIV
Image sensor
ActiveCN108777772AImprove conversion gainReduce metal connectionTransistorTelevision system detailsCapacitanceFloating diffusion
The invention provides an image sensor. The image sensor is provided with a plurality of pixel units which are formed on a semiconductor substrate and arranged in rows and columns, and each pixel unitcomprises one or more photodiodes, one or more of pass transistors, a reset transistor, and a source following transistor; the pass transistors are respectively connected to the respective photodiodes, and are used for transferring electric signals to a floating diffusion region; the reset transistor is connected to the floating diffusion region; and the grid of the source following transistor isconnected to the floating diffusion region to amplify and output the electric signal of the floating diffusion region. One part of the floating diffusion region is covered by one end of the grid of the source following transistor, so that a superposed region is formed; and a point of junction is shared by the grid of the source following transistor and the floating diffusion region, so that electric connection is formed. The image sensor proposed by the invention can effectively reduce the capacitance of the floating diffusion region, increase the conversion gain of a pixel circuit and reduceimage noise.
Owner:思特威(上海)电子科技股份有限公司
CMOS (complementary metal oxide semiconductor) image sensor column-sharing 2X2 pixel unit and CMOS image sensor pixel array
ActiveCN102868866ALower Media HeightImprove efficiencyTelevision system detailsColor television detailsCMOSImaging quality
The invention discloses a CMOS (complementary metal oxide semiconductor) image sensor column-sharing 2X2 pixel unit and a CMOS image sensor pixel array. Four pixels are arrayed to a 2X2 pixel array to serve as a pixel unit group, and two pixels in the front column and two pixels in the rear column of each pixel unit group respectively share a selective transistor, a source following transistor, a reset transistor and a drift active region in the same column. Metal wiring in a two-dimensional pixel array of a CMOS image sensor is achieved by metal wires in two layers, the metal wires in the zero layer and the metal wires in the first layer are used as device control wires to achieve an image information acquisition function, the metal wires in the second layer or the higher layer are unused as device control wires, and the dielectric height on the Si surface of a photodiode can be decreased to enable more light to be incident to the photodiode, so that light use efficiency and conversion gain of a small-area pixel sensor can be increased, and further, sensitivity is improved, and image quality of the small-area pixel image sensor can be effectively improved.
Owner:BEIJING SUPERPIX MICRO TECHNOLOGY CO LTD
Transformer-based self-mixing frequency tripler with voltage-controlled capacitor matching
ActiveCN112671344AWorking bandwidthFacilitate bias voltage designOscillations generatorsCapacitanceTelecommunications
The invention belongs to the technical field of wireless communication, and provides a transformer-based self-mixing frequency tripler with voltage-controlled capacitor matching, which is used for solving the problems that the traditional frequency tripler is narrow in bandwidth, low in efficiency and small in gain, and needs higher working voltage. The self-frequency-mixing frequency tripler is composed of an input impedance matching network, a frequency doubling stage, a self-frequency-mixing stage and an output matching network. Firstly, variable capacitors CT1 and CT2 are used in an input impedance matching network to optimize input impedance, the working bandwidth of the self-mixing frequency tripler is effectively expanded, and 50-ohm impedance matching is achieved; secondly, through the structural design that inductors LD and LS are coupled with each other to serve as a transformer to connect the output of the second harmonic generation stage with the input of the self-mixing stage, the power supply voltage required by the device can be effectively reduced, and the conversion gain is effectively improved; in conclusion, the working bandwidth can be effectively broadened, the conversion gain can be improved, the conversion efficiency can be improved, and the power supply voltage requirement can be reduced.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Data processing method for THz-grade large-bandwidth laser synthetic aperture radar imaging system
ActiveCN102636776BImprove stabilityImprove anti-interference abilityRadio wave reradiation/reflectionImage resolutionSynthetic aperture radar imaging
The invention discloses a data processing method for a THz-grade large-bandwidth laser synthetic aperture radar imaging system, which is composed of a linear tuning semiconductor, a 99:1 optical fiber coupler, a 90:10 optical fiber coupler, an emission collimating lens, a polarized beam splitter, a lambda / 4 wave plate, a target displacement platform, a receiving collimating mirror, four 50:50 optical fiber couplers, two balancing detectors, a reference time delay optical fiber, a molecular wavelength reference device, an optical power meter, a data acquisition module and a data processing program module. The laser synthetic aperture radar imaging system disclosed by the invention is based on a large-range linear tuning laser pulse signal; and a target two-dimensional image is calculated according to the homodyne coherent detection technology, the balance detection technology, the synthetic aperture technology and the final special data processing procedure. The system has the advantages of short laser signal wavelength, large bandwidth, high imaging resolution, all-weather characteristic, high stability, simple structure, high detection sensitivity and long acting distance, and most of the system is based on the optical fiber device.
Owner:SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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