197 results about "Doherty amplifier" patented technology

A Doherty amplifier comprises a main amplifier and a peaking amplifier. The main amplifier and the peaking amplifier are electrically connected to a same input signal source. The main amplifier and the peaking amplifier comprise different epitaxial structures of a Group III nitride material. To form the Doherty amplifier, the main amplifier and the peaking amplifier are formed comprising Group III nitride transistors comprising different epitaxial structures from different epiwafers such that the Group III nitride transistors of the main and peaking amplifiers comprise different epitaxial structures. The wafers are diced to produce respective amplifier dies comprising the main amplifier and peaking amplifier, respectively. The amplifier dies are mounted on a common heat sink, and the main and peaking amplifiers are electrically connected to the input signal source.

Disclosed are an output network of a Doherty amplifier, a Doherty amplifier including the output network, and a design method of the Doherty amplifier. The output network includes a combination node, a main output network connected between an output port of the main amplifier and the combination node, an auxiliary output network connected between an output port of the auxiliary amplifier and the combination nod, and a merging matching network connected between the combination node and a radio frequency output port of the Doherty amplifier, where the merging matching network is configured for the node impedance at the combination node being a complex impedance, and the main output network and the auxiliary output network are configured for the node impedance matching with goal load impedances of the main amplifier and the auxiliary amplifier.

The invention provides a radio frequency power amplification circuit suitable for a mobile terminal, and the circuit comprises an input balun module which is configured to receive single-ended radio frequency input and output two paths of differential radio frequency signals; the main power amplifier module is configured to receive one of the two paths of differential radio frequency signals from the input balun module and output a first amplified signal; the auxiliary power amplifier module is configured to receive the other path of differential radio frequency signal in the two paths of differential radio frequency signals from the input balun module and output a second amplified signal; and the output balun module is configured as a balun in the form of a single transformer and is used for receiving the first amplified signal output by the main power amplifier module and the second amplified signal output by the auxiliary power amplifier module and generating a single-ended radio frequency output signal.

A high frequency amplifier includes an asymmetrical Doherty amplifier having a carrier amplifier, a peak amplifier, a branch circuit, and a phase adjusting circuit, a driver amplifier, and a base member mounting a first circuit board mounting the driver amplifier, the carrier amplifier, and the peak amplifier and a second circuit board mounting the circuits. The branch circuit divides a path of a RF signal into input paths of the peak and carrier amplifiers. The driver amplifier, the carrier amplifier, and the peak amplifier have rear surfaces in contact with the base member. The electrical length from the output terminal of the driver amplifier to the input terminal of the peak amplifier, when converted based on a phase of the signal, is from (2n+1)×π−π / 4 to (2n+1)×π+π / 4, where n is an integer greater than or equal to zero.

A Doherty amplifier is provided with a lumped-element combiner that includes a first capacitor and an inductor. Should the inductor be coupled between an output terminal of the main amplifier and an output node of the Doherty amplifier, the first capacitor couples between an output terminal of the auxiliary amplifier and the output node. Conversely, if the first capacitor is coupled between the output terminal of the main amplifier and the output node, then the inductor couples between the output terminal of the auxiliary amplifier and the output node. A current scaling ratio of the Doherty amplifier ranges from 0.4 to 0.6 to enhance the bandwidth.

Apparatus and methods for an improved-efficiency Doherty amplifier are described. The Doherty amplifier may include a two-stage peaking amplifier that transitions from an “off” state to an “on” state later and more rapidly than a single-stage peaking amplifier used in a conventional Doherty amplifier. The improved Doherty amplifier may operate at higher gain values than a conventional Doherty amplifier, with no appreciable reduction in signal bandwidth.

A dual-T network configured as a three-port combiner provides signal paths from two input ports to an output port, with near 0° insertion phase along one path, near ±90° insertion path along the other path, and impedance step-up along both paths. Disclosed combiners provide superior loss and impedance matching characteristics over wide (15%) bandwidth, and are suitable for use in Doherty amplifiers, which can provide high efficiency over about 10 dB output power levels, the power levels being adjusted dynamically or under switched control. Single-ended and differential Doherty amplifiers are disclosed. The combiners and Doherty amplifiers are suitable for mobile phones and other modern RF products, including battery powered products. The combiners can also serve as general-purpose quadrature couplers. Variations and performance graphs are presented.

A Doherty amplifier circuit includes a carrier amplifier that amplifies a radio-frequency signal, a peak amplifier that amplifies a radio-frequency signal, and a bias circuit that supplies a bias current or a bias voltage to the peak amplifier. The peak amplifier includes one or more amplifier transistors that amplify a radio-frequency signal, and a state control circuit that controls the operating state of the one or more amplifier transistors on the basis of an input control signal.

An amplifier is disclosed having a carrier amplifier and a peaking amplifier coupled in parallel with the carrier amplifier, wherein the peaking amplifier has peaking output transistors. A peaking power supply adaptive bias generator is coupled to bias control terminals of the peaking output transistors. The peaking power supply adaptive bias generator is configured to sense supply voltage to the peaking amplifier and increase bias currents to the peaking output transistors as the supply voltage decreases.

A Doherty amplifier circuit includes a carrier amplifier that amplifies a radio frequency signal; a peak amplifier that amplifies the radio frequency signal; and a control circuit including a first variable bandpass characteristic circuit configured such that a bandpass characteristic for passing the radio frequency signal is variable according to a supply voltage and a detector that detects the radio frequency signal passing through the first variable bandpass characteristic circuit. The control circuit controls the bias of the peak amplifier according to a detection result of the detector.

This Doherty amplifier includes: a carrier amplifier for amplifying a first signal and outputting the amplified first signal; a peaking amplifier for amplifying a second signal and outputting the amplified second signal, the peaking amplifier having a non-linear output capacitance; a first output circuit for transmitting the first signal output from the carrier amplifier; a second output circuit for functioning as a virtual short stub when the peaking amplifier does not perform an amplification operation, and transmitting the second signal output from the peaking amplifier; and a combining circuit for combining the first signal transmitted by the first output circuit and the second signal transmitted by the second output circuit and outputting a combined signal of the first signal and the second signal, wherein, when the peaking amplifier performs the amplification operation, the second output circuit transforms an impedance seen by looking into the combining circuit from the peaking amplifier into an impedance in an inductive region.

Example embodiments relate to power amplifiers and Doherty amplifiers that include the same. One example embodiment includes a power amplifier. The power amplifier includes one or more radiofrequency (RF) output terminals. The power amplifier also includes a Gallium Nitride (GaN) semiconductor die on which a power field-effect transistor (FET) is integrated. The FET includes a plurality of FET cells that are adjacently arranged in a row. The FET cells are connected either directly or indirectly to the one or more RF output terminals via a respective first inductor. For FET cells arranged at opposing ends of the row of FET cells, a total FET cell gate width and an inductance of the first inductor is larger and smaller than the total FET cell gate width and inductance of the first inductor for one or more FET cells arranged in the middle of the row of FET cells, respectively.

A Doherty amplifier according to an aspect of the present disclosure includes a heat sink; a resin substrate mounted on the heat sink, and having a cavity formed to expose the heat sink, the resin substrate being formed by stacking a plurality of resin layers and a plurality of metal layers; a main amplifier mounted in the cavity; a peak amplifier mounted in the cavity; and an inductor, wherein the resin substrate has a partition wall part that separates at least a portion of the main amplifier from at least a portion of the peak amplifier, the plurality of metal layers of the partition wall part are electrically connected to the heat sink, and the inductor is mounted on the partition wall part, and electrically connected to the plurality of metal layers.

An impedance detection circuit includes: a first detector that detects a first voltage amplitude at an end of an inverter circuit having the end to which a radio frequency signal is input and having a different end from which a signal is output; a second detector that detects a second voltage amplitude of the different end of the inverter circuit; and a phase difference detector that detects a phase difference between a phase of a voltage across the end of the inverter circuit and a phase of a voltage across the different end of the inverter circuit. An absolute value of a product of diagonal elements of a dependent parameter for the inverter circuit is smaller than an absolute value of a product of off-diagonal elements.

A Doherty amplifier is configured to include a first transistor that amplifies a first signal and outputs the amplified first signal, a second transistor that amplifies a second signal and outputs the amplified second signal, and a combining circuit that combines the amplified first signal output from the first transistor and the amplified second signal output from the second transistor and outputs a combined signal of the amplified first signal and the amplified second signal, in which a signal mode in which the first signal amplified by the first transistor and the second signal amplified by the second transistor are combined in phase and a signal mode in which the first signal amplified by the first transistor and the second signal amplified by the second transistor are combined out of phase are switched in accordance with a frequency, and an operation mode is switched to a Doherty operation mode or an outphasing operation mode depending on the switched signal mode.

A Doherty amplifier includes: a carrier amplifier to amplify a first high frequency signal having a first higher harmonic and a second higher harmonic; a peak amplifier to amplify a second high frequency signal having the first higher harmonic and the second higher harmonic; a first series resonant circuit connected between an output end of the carrier amplifier and a ground, and configured to resonate at the frequency of the first higher harmonic; a second series resonant circuit connected between an output end of the peak amplifier and the ground, and configured to resonate at the frequency of the first higher harmonic; a first parallel resonant circuit configured to resonate at the frequency of the second higher harmonic; and a second parallel resonant circuit configured to resonate at the frequency of the second higher harmonic.

A power amplifier includes a substrate, first and second transistor amplifiers, and at least one matching circuit. Respective output terminals of the first and second transistor amplifiers are coupled to a combining node, and the matching circuit includes one or more passive electrical components coupled between one of the respective output terminals and the combining node. At least one of the first and second transistor amplifiers or the one or more passive electrical components is mounted on the substrate in a flip chip configuration. The matching circuit may include a shunt inductance that is coupled to the one of the respective drain terminals by a conductive bump. Related devices are also discussed.

A Doherty amplifier according to the present disclosure comprises a main amplifier, an auxiliary amplifier, a distribution circuit that distributes signals to the main amplifier and the auxiliary amplifier, and a phase compensation circuit. The main amplifier has a first input matching circuit and a plurality of main amplification stages. The auxiliary amplifier has a second input matching circuit and a plurality of auxiliary amplification stages. The distribution circuit has a first line connected to the first input matching circuit and a second line connected to the second input matching circuit. The electrical length of the first line is such that the input impedance of the first line is higher than the characteristic impedance of the first line and the imaginary component is less than 10% of the real component when a small signal is input. The electrical length of the second line is such that the input impedance of the second line is higher than the characteristic impedance of the second line and the imaginary component is less than 10% of the real component when a small signal is input. The phase compensation circuit is provided in an inter-stage matching circuit of the plurality of main amplification stages or the plurality of auxiliary amplification stages.

A Doherty amplifier with an adjustable alpha factor is disclosed. The Doherty amplifier circuit has an adjustable impedance and phase ("TIP") circuit to provide an adjustable alpha factor that allows selection of a power added efficiency (PAE) curve that is useful for applications with different modulations or to meet other criteria. Embodiments include a Doherty amplifier with a TIP circuit that provides an impedance Z INV The invention provides an adjustable phase adjustment circuit for the carrier amplifier while maintaining the phase of the output of the carrier amplifier at 90° (for the selected polarity) ± low phase variation. An embodiment of the TIP circuit includes one or more series-connected TIP cells, the TIP cell including at least one TIP circuit combined with an adjustable phase adjustment circuit. In operation, when the impedance of the TIP cell is adjusted, adjustments are also made within the cell to provide phase shift correction back to 90° (at the selected polarity).

A control circuit is configured to control a Doherty amplifier including a carrier amplifier and a peak amplifier. The control circuit includes a resistor having a resistance value that is irreversibly adjustable. The resistor is configured to determine, based on the resistance value, a bias of the peak amplifier. The control circuit controls a Doherty amplifier.

A Doherty amplifier includes a first amplifier that includes first output fingers and a first output electrode connected to the first output fingers, a second amplifier that includes second output fingers and a second output electrode connected to the second output fingers, a first bonding wire connected between a first region in the first output electrode and a second region in the second output electrode, a second bonding wire connected between a third region in the first output electrode and a fourth region in the second output electrode, and at least one of a first capacitor connected in series with the first bonding wire, and a second capacitor connected in parallel with the second bonding wire, wherein the first and the third regions are regions to which the first output fingers are connected, and the second and the fourth regions are regions to which second output fingers are connected.

An amplifier device, such as a Doherty amplifier device, may include an extra lead and decoupling capacitor coupled to radio frequency (RF) cold points of output impedance matching circuitry of multiple amplification paths, such as a carrier path and peaking path, of the amplifier device. The extra lead and the decoupling capacitor are configured to provide low frequency resonance decoupling for the multiple amplification paths. A drain bias voltage may be provided to the drain terminals of transistors of amplifiers of the amplifier device via the extra lead. An integrated passive device (IPD) including a wire fence and one or more conductive pads may be disposed between a carrier amplifier die and a peaking amplifier. The extra lead may be coupled to the RF cold points via the IPD. The wire fence may mitigate RF interference between the carrier amplifier die and the peaking amplifier die.

The present disclosure relates to an amplifier configured to amplify signals within a given operational frequency, and further relates to an amplifier system, and to a Doherty amplifier. Examples include one or more resonance networks connected to an input terminal of a transistor of the amplifier that each include a first inductor arranged in between the input terminal and an intermediate node, a first capacitor arranged in between the intermediate node and ground, and a series network arranged in between the intermediate node and ground that includes a second inductor and a second capacitor. A susceptance presented by the one or more resonance networks at the input terminal cancels the input susceptance of the transistor at a frequency within an operational frequency band. In addition, an RF short is presented by each resonance network at a second harmonic of which the corresponding fundamental lies within the operational frequency band.

To suppress deterioration of output characteristics.SOLUTION: A semiconductor device comprises: a first terminal connected to an output terminal of a first-phase amplifier of a carrier amplifier; a second terminal connected to an output terminal of a second-phase amplifier of the carrier amplifier; a third terminal connected to an output terminal of a first-phase amplifier of a peak amplifier; a fourth terminal connected to an output terminal of a second-phase amplifier of the peak amplifier; a fifth terminal connected to the output terminal of the first-phase amplifier of a peak amplifier; and a sixth terminal connected to the output terminal of the second-phase amplifier of the peak amplifier. A Doherty amplifier comprises: a first metallic component connecting one end of first wiring and the first terminal; a second metallic component connecting one end of second wiring and the second terminal; a third metallic component connecting the other end of the first wiring and the fifth terminal; and a fourth metallic component connecting the other end of the second wiring and the sixth terminal.SELECTED DRAWING: Figure 3

The utility model discloses a packaging carrier and a Doherty amplifier comprising the packaging carrier. The packaging carrier comprises a first input interface and a second input interface, a first output interface and a second output interface; a substrate; the first transistor is located on the substrate, the control end of the first transistor is coupled to the first input interface, and the output end of the first transistor is coupled to the first output interface; the second transistor is located on the substrate, the control end of the second transistor is coupled to the second input interface, the output end of the second transistor is coupled to the second output interface, the first transistor comprises a silicon carbide-based transistor, and the second transistor comprises a silicon-based transistor; and the bias circuit is configured to provide corresponding bias voltages for the first transistor and the second transistor.

A Doherty power amplifier compression compensation circuit is disclosed. A power amplifier chain may include a Doherty amplifier having a main power amplifier path and a peaking power amplifier path, where both paths have a driver stage and an output stage. One or more compression detection circuits may be associated with an output of the main output stage. Responsive to detecting compression at this output, an adjustment is made to one or more knobs in the power amplifier chain. In a first aspect, a variable gain control circuit may adjust the gain of an earlier amplifier (e.g., the driver stage) for either (or both) of the main path or the peaking path. In further aspects, one or more bias circuits may have bias signals adjusted. Both amplitude and phase compression may be addressed by aspects of the present disclosure.

The embodiment of the invention provides a Doherty power amplifier circuit with a source dynamic bias circuit of a Doherty power amplifier and a module. The active dynamic bias circuit comprises a first control voltage, a second control voltage, a third control voltage and a fourth control voltage, a bias switching circuit including a voltage division circuit connected to the first control voltage, the voltage division circuit including a switching element and a voltage division element connected in series; the second control voltage is connected with the control end of the switching element; the switch element is controlled by a first control voltage, a second control voltage and radio frequency input power, the voltage division circuit comprises a voltage division output end connected with a grid electrode of the auxiliary power amplifier, when the input power is larger than a preset value, the switch element is closed to enable the voltage division circuit to form a closed circuit, and the voltage division circuit provides grid bias voltage for the auxiliary power amplifier; therefore, the auxiliary power amplifier works in the AB type. Therefore, the auxiliary power amplifier works in the class AB in a high-power input signal range, the advantages of the class A power amplifier and the class B power amplifier can be combined, and the power and the gain of the whole circuit are effectively improved.

An amplifying circuit includes a transistor that includes an input terminal receiving a high frequency signal and an output terminal outputting an amplified high frequency signal, an inductor connected in parallel to the transistor between the input terminal and the output terminal, and a capacitor connected in parallel to the transistor and connected in series to the inductor between the input terminal and the output terminal.

The invention relates to a transmission and reception device with a broadband HF power amplifier, in particular an N-way Doherty amplifier with active load modulation. The object of the invention is to provide a high-power transmission and reception device suitable for high-power and broadband applications and having a transmission power of more than 10 Watts to approximately 2000 Watts by means of appropriate design measures in combination with electronic components, starting from a transmission and reception device with a module (GSZ) having a configurable HF high-power amplifier (HPA) that operates between and below two power back-off points and comprises a main power amplifier (DM) with an amplifier core and at least one peak power amplifier (DP1) with an amplifier core, wherein a digital input signal distributor (ET) is provided, which is connected to the input of the main power amplifier (DM) and to the input of the at least one peak power amplifier (DP1) and has a plurality of outputs, and an output combiner connected to the output of the amplifier core of the main power amplifier and the output of the at least one peak power amplifier is provided. This object is achieved according to the invention, in which an additional multiharmonic transformation line (LAH) is provided at the amplifier core output of a main power amplifier (DM) and at the amplifier core output of at least one peak power amplifier (DP1) and a circulator (Z1) connected to the output of an impedance converter (AN1) or an output combiner (C). By means of the circulator (Z1), the upstream main power amplifier (DM) and at least one peak power amplifier (DP1) are protected from overvoltage and overcurrent on the output side, because the circulator (Z1) transfers energy to a collecting resistor (W1) connected to the circulator (Z1). The invention belongs to the field of broadband amplifiers, in particular broadband Doherty amplifier circuits.