6 results about "Gated diode" patented technology

One or more gated nanosheet diodes are disposed on a substrate and made from a nanosheet structure. A first (second) source / drain (S / D) is disposed on the substrate. The first (second) S / D has a first (second) S / D doping concentration of a first (second) S / D doping type. One or more p-n junctions form one or more respective diodes. Each of the p-n junctions has a first side and a second side. The first (second) side of the p-n junction is electrically and physically connected to the first (second) S / D and has a same type of doping, respectively. A gate stack made from a gate dielectric layer and a gate metal interfaces and surrounds each of the p-n junctions.

To provide a true random number generator for realizing information encryption by generating a random bit by a stochastic switching operation through a feedback loop phenomenon in a channel region of a gate diode, and controlling a generation probability of the random bit through control of voltage application.SOLUTION: The true random number generator 300 includes a gated diode 301 and a control transistor 302. The gated diode includes a p + - i-n + diode structure disposed between a drain and a source, a gate oxide layer disposed on an intrinsic region of the p + - i-n + diode structure, and a first gate and a second gate disposed on the gate oxide layer. The control transistor includes a control drain terminal connected to the source, a control gate terminal, and a control source terminal, and controls electron injection into the p + - i-n + diode structure by controlling a gate voltage applied through the control gate terminal.SELECTED DRAWING: Figure 3A

To provide a vibration neural network circuit device for solving a graphcoloringproblem by allowing a plurality of oscillators coupled by a capacitor or a resistor to detect an edge or to indicate colors of at least two graphs for an input graph.SOLUTION: In the vibration neural network circuit device 700 using a gated diode-based oscillator, phase differences between the voltage VIN1 and the voltage VIN2 may occur due to time differences between the voltage VOUT1 and the voltage VOUT2 input to at least two gated diodes constituting at least two oscillators 701 and 702, and thus colors of at least two graphs with respect to input graphs of a graph coloring problem may be represented based on the phase differences over time.SELECTED DRAWING: Figure 7A

Disclosed is an oscillatory neural network circuitry using oscillators including a gated diode. An oscillatory neural network circuitry according to an embodiment of the present disclosure using oscillators including a gated diode can represent at least two graph colors of an input graph based on phase differences in output voltages over time, as phase differences occur in the output voltages depending on time differences of input voltages applied to at least two gated diodes constituting at least two oscillators.

The application provides an image sensor with improved pixel field effect transistor GIDL and a preparation method. The image sensor comprises a pixel field effect transistor and a peripheral logic field effect transistor. The pixel field effect transistor comprises a charge transport gate and a floating diffusion active region. A gate edge region near one end of the floating diffusion active region in the charge transport gate has a different structure from a gate edge region of the peripheral logic field effect transistor. The electric field intensity of the gate edge region near one end of the floating diffusion active region in the charge transport gate is lower than that of a gate center region of the charge transport gate. The GIDL phenomenon of the pixel field effect transistor is improved, and the image quality of the CIS is improved.

Disclosed is a gated diode-based true random number generator capable of encrypting information. More particularly, a gated diode-based true random number generator according to an embodiment of the present disclosure includes a gated diode where a p+-i-n+ diode structure is positioned between a drain terminal and a source terminal, a gate-insulating film is positioned on an intrinsic region of the p+-i-n+ diode structure, and two gate terminals are positioned on the gate-insulating film; and a control transistor where a control drain terminal is connected to the source terminal, wherein the control gate terminal and the control source terminal are constituted together with the control drain terminal, and the control transistor controls electron injection into the p+-i-n+ diode structure according to control of a gate voltage VMOS applied through the control gate terminal.