The application discloses a preparation method of an n-type
gallium nitride-based GAA-HEMT
inverter, and comprises the following steps: S1, growing aluminum
oxide on a GaN
single crystal substrate,
etching the middle part of the
barrier layer and depositing a
metal gate; S2,
etching the middle part of the gate to form a groove, depositing aluminum
oxide,
etching the middle and both sides of the aluminum
oxide, growing GaN nanosheets in the etching area,
doping Si after growing AlGaN nanosheets, growing GaN nanosheets to form p-GaN nanosheets by
doping Mg; S3, etching the p-GaN nanosheets to make the width of the p-GaN nanosheets same as that of the gate, evaporating a
metal film in the thickness direction of the two
layers of nanosheets to prepare a source
electrode and a drain
electrode, growing aluminum oxide on the surface of the device to cover the p-GaN nanosheets and the AlGaN nanosheets, depositing a
metal gate to cover the aluminum oxide to form an E-mode GaN; and S4, growing aluminum oxide, etching the middle part of the aluminum oxide to deposit a
metal gate, and preparing GaN nanosheets, AlGaN nanosheets, a source
electrode and a drain electrode in the manner of S2 and S3, growing aluminum oxide to cover the AlGaN nanosheets, depositing a
metal gate to cover the aluminum oxide to obtain a D-mode GaN with a GAA structure.