81results about How to "Improve the sense of speed" patented technology

The invention concerns a method of displaying data on a client computer as well as a client computer and computer executable software code for data display on the client computer. The client computer retrieves a web page containing statical data of a graphical user interface and at least one inclusion for including the dynamic data of the web page, wherein said inclusion points to a program located at a network server and adapted to output a script. The client computer stores the web page in a cache memory. The script that contains dynamic data generated by the program is transferred from the network server to the client computer. A browser of the client computer includes the dynamic part into the static part of the web page by means of the dynamic data included in the retrieved script.

The present invention relates to an apparatus for dividing a bank in a flash memory. A block of the flash memory is divided into two banks and each page buffer is located between the two banks to share an input/output line. Therefore, it is possible to shorten the length of a bit line, improve a data sensing rate, and allow one bank to perform one operation while the other bank performs a read, write or erase operation.

According to a semiconductor device of the present invention, a differential potential between a sense amplification level and a precharge level of a sense amplifier is set to a power supply potential (VCC-GND) so as to improve resistance against degradation of hold characteristics. Further, low power consumption can be realized along with the improvement. Additionally, the precharge level is set to a power supply of GND or VCC so as to realize a stable supply of the precharge level. Further, a chip size can be reduced since a power supply circuit for precharge is not needed.

A substrate voltage control technique that prevents the operating speed from being decreased and suppresses a leakage current due to a lower threshold voltage with respect to a low voltage use. Since a center value of the threshold voltages is detected by plural replica MOS transistors, and a substrate voltage is controlled to control a center value of the threshold voltages, thereby making it possible to satisfy a lower limit of the operating speed and an upper limit of a leakage current of the entire chip. On the other hand, the substrate voltage is dynamically controlled during the operation of the chip, thereby making it possible to decrease the center value of the threshold voltages when the chip operates to improve the speed, and to increase the center value of the threshold voltages after the operation of the chip to reduce the leakage current of the entire chip.

A sense amplifier for use in sensing a signal in an integrated circuit comprises an amplifier portion and an output portion. The amplifier portion comprises a gated diode having a gate terminal. The output portion comprises an output transistor in signal communication with the gate terminal of the gated diode and having a source terminal. A variable source voltage acts on the source terminal of the output transistor when the sense amplifier is in operation. The variable source voltage is temporarily altered when the sense amplifier is actively sensing the signal in the integrated circuit.

As memory geometries continue to scale down, current density of magnetic tunnel junctions (MTJs) make conventional low current reading scheme problematic with regard to performance and reliability. A body-voltage sense circuit (BVSC) short pulse reading (SPR) circuit is described using body connected load transistors and a novel sensing circuit with second stage amplifier which allows for very short read pulses providing much higher read margins, less sensing time, and shorter sensing current pulses. Simulation results (using 65-nm CMOS model SPICE simulations) show that our technique can achieve 550 mV of read margin at 1 ns performance under a 1V supply voltage, which is greater than reference designs achieve at 5 ns performance.

A semiconductor memory device includes a first circuit which generates a first potential lower than the external power supply voltage, a second circuit which generates a second potential lower than the first potential, a capacitor charged to the first potential, a bit line connected to a memory cell, a sense amplifier which performs sense operation to amplify a potential on the bit line to the second potential, and a connection control circuit which connects the first circuit to the sense amplifier within a first time period from a start of the sense operation, and which connects the second circuit to the sense amplifier after the lapse of the first time period. The first circuit is enabled before the start of the sense operation and is disabled after the completion of charging of the capacitor, and the output of the first circuit is thereby set in a floating state.

The invention relates to an anti-dazzle principle based design method for traffic engineering facilities at a road tunnel exit. The method is characterized in that tunnel exit anti-dazzle facilities are arranged in front of the tunnel exit to ease intensive brightness transition caused by insufficient illuminating lamps at the tunnel exit; coloured painting materials of which reflection coefficients gradually reduce are arranged on the tunnel ceiling, side walls and roads from the top down to ease brightness transition and beam divergence at the tunnel exit, so as to lift the dazzle area, reduce the dazzle area below the visual line of a driver and increase the visual adaptation time; horizontal road direction lines and road lane keeping lines are arranged on the road, and side wall vertical direction lines and side wall double-layered contour marks are arranged on the side walls, so as to form a closed mid-frequency retroreflective information stream together; high-frequency red and white marked lines arranged on maintenance road edges and road side reflective raised route markers form a high frequency visual information stream to increase the driver's instantaneous velocity sensation, and promote the driver's speed feeling and distance feeling, and accordingly, the coordination and unification of the tunnel lighting energy conservation and tunnel traffic safety are realized.

A touch display device comprises a touch panel including a plurality of touch electrodes; and a touch driving circuit configured to sense one or more of the plurality of touch electrodes, wherein the touch driving circuit has an operation period including a plurality of touch intervals that includes a first sensing interval and a second sensing interval, and the first sensing interval includes at least a first time division sensing interval and the second sensing interval includes at least a second time division sensing interval, and wherein the touch driving circuit is configured to detect a pen signal output from a first pen through one or more touch electrodes of the plurality of touch electrodes during the first time division sensing interval, and detect a pen signal output from a second pen through one or more touch electrodes of the plurality of touch electrodes during the second time division sensing interval.

A sense circuit includes a differential amplifier circuit including an inverting input section, a non-inverting input section and an output section, an electrical capacitor connected between the inverting input section and the output section, and a field effect transistor including a source, a drain, and a gate. One of the source and the drain is connected to the inverting input section, and the other of the source and the drain is connected to the output section. A reference potential is supplied to the non-inverting input section, and an output section of a photoelectric conversion cell having an added switching function is connected to the inverting input section.

Embodiments of the invention provide a sense amplifier, a SRAM chip comprising the sense amplifier and a method for conducting read operation on a SRAM cell. The sense amplifier according to an embodiment of the invention comprises a cross coupling circuit, a tail current transistor and an output stage, wherein source of the tail current transistor is connected to a negative level. With the scheme according to embodiments of the invention, speed of the sense amplifier can be enhanced, thereby increasing read speed of the SRAM chip.

A sense amplifier power-gating circuit and method is disclosed which is of particular utility with respect to DRAM devices, or those incorporating embedded DRAM, and having a power-down (or Sleep) mode of operation. In accordance with a particular technique of the present invention, the local sense amplifier driver transistors serve a dual purpose as both driver and power gate transistors thereby obviating the need for large, distinct power-gating devices. This serves to minimize on-chip area requirements while not degrading sensing speed as in conventional approaches.

The invention provides a large-dynamic range Brillouin rapid measurement system based on multiple slope assistance. An output end of a laser is connected to an input end of a first coupler. A first output end of the first coupler is connected with an input end of the second coupler through a first modulator, a first optical amplifier and a filter in sequence. A first output end of the second coupler is connected with a first input end of a third coupler through a second modulator. A second output end of the second coupler is connected with a second input end of the third coupler through a third modulator. An output end of the third coupler is connected with a second end of a sensing optical fiber through an isolator. A second output end of the first coupler is connected with a first end ofa first circulator through a fourth modulator, a second optical amplifier and a scrambler in sequence. The first circulator is connected with a first end of the sensing optical fiber at a second end,and is connected with an input end of a photoelectric detector at a third end. An output end of the photoelectric detector is connected with a processor through an acquisition card. According to thelarge-dynamic range Brillouin rapid measurement system based on the multiple slope assistance, the dynamic range of accurate measurement can be improved.

Provided are a water engineering seepage behavior fusing and sensing system and method. The system comprises a seepage-hidden optical fiber locating device, a seepage flow velocity distributed optical fiber monitoring device, an online seepage line diagnosis device and a seepage behavior optical fiber self-adaptive identification device, the location of a water engineering seepage point is realized by using the seepage-hidden optical fiber locating device, then, the seepage flow velocity of a water engineering is monitored by virtue of the seepage flow velocity distributed optical fiber monitoring device, the online diagnosis of a seepage line on a section of a whole water engineering structure can be realized by using the online seepage line diagnosis device, and finally, the current seepage behavior is integrally monitored and evaluated by using the seepage behavior optical fiber self-adaptive identification device, so that the water engineering seepage behavior fusing and sensing is completed. The optical information change of the optical fiber is acquired from multiple aspects and angles by using the four water engineering seepage monitoring devices, depending on the material and mechanical properties of the water engineering and relying on a distributed optical fiber monitoring technology, and furthermore, the monitoring and sensing of a seepage behavior of a water engineering are indirectly completed.

A capacitive touch apparatus includes a first touch unit, a first voltage difference retrieving unit, a first feedback signal generating unit, and a control unit. The first touch unit has a touch substrate and a first conductive layer. The first voltage difference retrieving unit is electrically connected with the first conductive layer and outputs a first voltage signal and a second voltage signal. The first feedback signal generating unit outputs a first feedback signal according to the variation of the voltage difference between the first voltage signal and the second voltage signal. The control unit receives the first feedback signal for computing the touch position and outputs a power signal to the first voltage difference retrieving unit. Hence, the capacitive touch apparatus improves the sensing speed and reduces the manufacturing cost by the simple circuit design.

The invention discloses a light sensing method of a light sensing device. The light sensing device includes a plurality of light sensing pixels. First scanning drive signals and second scanning drivesignals are provided to all light sensing pixels so as to enable all the light sensing pixels to start light sensing when a first predetermined time arrives and to end light sensing when a third predetermined time arrives, so that electric signals generated when the light sensing pixels execute light sensing are latched. After all the light sensing pixels end light sensing, an output control signal is provided to the light sensing pixels in sequence so as to control output of latch electric signals corresponding to the light sensing pixels.

The invention relates to the technical field of traffic safety of expressways, in particular to an expressway exit curved slope ramp sight induction system, which is characterized in that corresponding first-stage, second-stage and third-stage sight induction systems are respectively arranged in road section areas with speed limits of 40km/h and below, 40-60km/h and 60km/h and above; the sight line induction system comprises a high-frequency rectangular attached delineator arranged at the bottom of the guardrail, a medium-frequency combined rectangular attached delineator arranged in the middle of the guardrail and a medium-frequency warning linear induction mark arranged on the outer side of the guardrail, and the high-frequency rectangular attached delineator, the medium-frequency combined rectangular attached delineator and the medium-frequency warning linear induction mark are graded according to different speeds. The round delineators, the rectangular attached delineators and thevisual reference columns are arranged on the inner sides and the upper portions of the guardrails, so that delineator induction of a curved slope section can be improved, the sensing capacity of a driver to a curve and a longitudinal slope is enhanced, the driver is effectively warned, and the starting section, the middle portion and the ending section of the ramp are each provided with an annularlight reflection structure. And a lane indicator is arranged below the annular reflective structure so as to ensure that a driver can discover within a decision sight distance.