Method for correcting layering optical proximity effect
A technology of optical proximity effect and correction method, which is applied in the direction of microlithography exposure equipment, special data processing application, photolithographic process exposure device, etc., can solve the problems of limited scope of application and limited performance improvement, and achieve the purpose of improving computing speed, Effects of speed improvement and cost reduction
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[0037] Further illustrate the present invention below in conjunction with accompanying drawing.
[0038] The hierarchical optical proximity effect correction method, the process is shown in Figure 1, including the preparation of the pre-correction cell library (Post-OPC Cell Library), the initialization of the mask pattern offset and the fast calculation using the dynamic adjustment algorithm, the steps are as follows :
[0039] 1) Initialization:
[0040] Set the simulation model for optical proximity effect correction (Simulation Model),
[0041] Photolithographic mask pattern, GDSII input,
[0042] The basic parameters of the lithography machine, λ, NA, σ,
[0043] where λ is the wavelength of the light source, NA is the numerical aperture of the optical system, and σ is the coherence coefficient of the illumination;
[0044] 2) Prepare the pre-calibration cell library:
[0045] Before the formal operation, the traditional model-based optical proximity effect correctio...
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