This invention relates to the field of chemical mechanical
polishing (CMP) pad technology, specifically to a highly hydrophilic and wear-resistant CMP
polishing pad, its preparation method, and its application. The invention uses cyanosiloxane monomers as raw materials, preparing highly active
carboxylate silsesquioxane powder through one-step
alkaline hydrolysis, and achieving nanoscale uniform dispersion of this
powder in
polyurethane. After pre-treating the base fabric with an acid-base oscillating impregnation agent, the nanoscale uniformly dispersed
slurry is coated onto the base fabric, and then solidified to obtain the target product. This invention solves the technical problems of difficulty in balancing hydrophilicity and
wear resistance, and poor
polishing uniformity in existing hydrophilic modification polishing pads. The polishing pad produced is used for
wafer polishing, exhibiting less than 3% intra-
wafer non-uniformity, fewer surface defects, and extended service life. The process of this invention is fully compatible with existing wet production lines for
polyurethane polishing pads, requiring no additional equipment. The process is simplified, batch stability is strong, and industrial
mass production is possible, adapting to the high-precision, low-defect polishing requirements of advanced
semiconductor processes below 14nm.