Preparation method of tin oxide nanotubes

Abstract

The invention discloses a preparation method of tin oxide nanotubes, which comprises the following steps: adding 110 to 230 mg of analysis pure stannous chloride and 0.3 to 0.6 g of urea into 40 mg of absolute ethyl alcohol; uniformly stirring and mixing materials at a normal temperature for use; transferring the obtained mixed solution of the absolute ethyl alcohol to a 100 ml high-temperature reaction kettle; placing the high-temperature reaction kettle into a constant-temperature drying box for preserving the heat for 10 to 15 hours at 150 to 200 DEG C; naturally cooling the materials to the room temperature; repeatedly cleaning obtained white precipitates for many times by deionized water or absolute ethyl alcohol; and then, drying the materials for 10 to 12 hours in the drying box at 60 to 80 DEG C to obtain the tin oxide nanotubes. The invention has the advantages of low cost, simple technical control process and easy large-scale production. The prepared tin oxide nanotubes with the porous tube wall structures have the monodispersity, the inner diameter of the tin oxide nanotubes is between 50 and 80 nanometers, the length of the tin oxide nanotubes is between 2 and 5 micrometers, and in addition, the tube walls are formed by tin oxide nanometer particles between 20 and 30 nanometers.

Description

technical field [0001] The invention relates to a method for preparing tin oxide nanotubes, in particular to a method for preparing tin oxide nanotubes with porous tube walls. Background technique [0002] Nanomaterials In addition to traditional nanorods, nanowires and nanotubes, many new one-dimensional nanomaterials have emerged in recent years, including nanobelts, nanodisks, nanosheets and nanodendrons. At present, both at home and abroad are making great efforts to synthesize new functional nanomaterials and prepare nanodevices. However, the large-scale and low-cost synthesis of nanotube structures with porous walls currently faces a serious challenge. [0003] Tin oxide material is an insulator material. When tin oxide is doped with antimony or fluorine ions, it becomes an important, colorless, low-cost large band gap n-type semiconductor material. Doped tin oxide semiconductor materials are widely used as transparent conductive oxide materials as substrates, gas ph...

AI Technical Summary

Problems solved by technology

Although there are methods for synthesizing tin oxide nanotubes, these methods are nothing more than using the template method combined with the electrodeposition process. The structure of the tin oxide nanotubes prepared by this method is messy and impurities are easily introduced during the synthesis process, resulting in The prepared tin oxide nanotubes are impure, and the prepared tin oxide nanotubes are not easily separated from the template

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