Photoelectric device and method of manufacturing same

A technology for optoelectronic devices and electrodes, applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of high cost of photovoltaic energy, and achieve the effect of increasing open circuit voltage, improving collection efficiency, and improving photoelectric conversion efficiency

Active Publication Date: 2014-05-21
INTELLECTUAL KEYSTONE TECH LLC
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, compared with the generation of thermal energy, the cost of generating photovoltaic energy (currently produced by using solar cells in industry) is high, and the power generation efficiency of solar cells has to be improved to broaden the application fields of solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric device and method of manufacturing same
  • Photoelectric device and method of manufacturing same
  • Photoelectric device and method of manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout.

[0030] figure 1 An optoelectronic device according to an embodiment of the invention is shown. refer to figure 1 , the optoelectronic device includes a semiconductor substrate 100, a first semiconductor layer 111 and a second semiconductor layer 112 formed in the semiconductor substrate 100, and a first electrode 121 and a second electrode 121 electrically connected to the first semiconductor layer 111 and the second semiconductor layer 112 electrode 122 . For example, a plurality of first semiconductor layers 111 and second semiconductor layers 112 may be alternately arranged along the first surface S1 of the semiconductor substrate 100 . The first semiconductor layer 111 and the second semiconductor layer 112 form the doping unit 110 of the semiconductor substrate 100 . The first s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Provided are a photoelectric device and a method of manufacturing the photoelectric device. The photoelectric device includes: a semiconductor substrate that is formed of monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed in the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon.

Description

[0001] This application claims U.S. Provisional Application No. 61 / 725,437, filed in the U.S. Patent and Trademark Office on November 12, 2012, and U.S. Patent Application No. 13 / 949,147, filed in the U.S. Patent and Trademark Office on July 23, 2013 The priority and benefits of these applications are hereby incorporated by reference in their entirety. technical field [0002] One or more embodiments of the present invention relate to an optoelectronic device and a method of manufacturing the optoelectronic device. Background technique [0003] Currently, development of clean energy is being promoted due to problems such as energy depletion of the earth and environmental pollution. Photovoltaic energy generated using solar cells is directly converted from sunlight, and thus is considered a new clean energy source. [0004] However, the cost of generating photovoltaic energy (currently industrially generated by using solar cells) is high compared with the generation of therm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/18
CPCH01L31/022441H01L31/022466H01L31/0682H01L31/1804Y02E10/547H01L31/02363H01L31/028Y02P70/50H01L31/18H01L31/04H01L31/065
Inventor 姜允默朴商镇李斗烈金亨基牟灿滨朴暎相徐京真金珉圣洪俊基任兴均宋珉澈朴省赞金东燮
Owner INTELLECTUAL KEYSTONE TECH LLC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap