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A kind of rear passivation crystalline silicon solar cell and preparation method thereof

A crystalline silicon solar cell and back passivation technology, applied in the field of photovoltaic solar energy, can solve the problems of difficult process, expensive laser processing equipment, reduced filling factor and photoelectric conversion efficiency, etc., so as to avoid difficult process and improve photoelectric conversion efficiency. , the effect of reducing light loss and carrier recombination loss

Inactive Publication Date: 2018-01-02
王行柱 +1
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] (1) The light loss and carrier recombination loss in the traditional structure still exist at the contact between the back aluminum electrode and silicon;
[0005] (2) The contact area between the back aluminum electrode and silicon is small, resulting in a large series resistance of the battery, which leads to a decrease in fill factor and photoelectric conversion efficiency;
[0006] (3) Including the laser opening preparation process, the laser processing equipment is expensive and the process is difficult

Method used

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  • A kind of rear passivation crystalline silicon solar cell and preparation method thereof
  • A kind of rear passivation crystalline silicon solar cell and preparation method thereof

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preparation example Construction

[0031] Such as figure 2 As shown, the preparation method of the back passivated crystalline silicon solar cell provided by the embodiment of the present invention includes:

[0032] S101: cleaning texture, phosphorus diffusion to make pn junction, wet edge cutting and back polishing to remove back junction, phosphorus silicon glass removal, deposition of silicon nitride anti-reflection layer;

[0033] S102: using an atomic layer deposition method to prepare an ultra-thin aluminum oxide layer for passivating the back surface of p-type crystalline silicon and allowing holes to tunnel through;

[0034] S103: Preparing a high work function transition metal oxide layer for further passivating the p-type silicon back surface and capable of collecting and conducting holes by using a thermal evaporation method.

[0035] S104: Printing the back electrode, printing the front silver grid electrode, and sintering to obtain a rear passivated crystalline silicon solar cell.

[0036] Furt...

Embodiment 1

[0043] Take 156*156mm 2 The p-type single crystal silicon wafer with a large area is used as the initial material, which is cleaned and textured, pn junction made by phosphorus diffusion, wet edge cutting and back polishing to remove the back junction, phosphorus silicon glass is removed, silicon nitride anti-reflection layer is deposited, and silicon nitride anti-reflection layer is deposited. The rear passivation monocrystalline silicon solar cell is obtained by depositing ultra-thin aluminum oxide layer, depositing non-stoichiometric molybdenum oxide layer, printing back silver electrode, printing front silver grid line electrode, and sintering process. The ultra-thin aluminum oxide layer is prepared by atomic layer deposition method, in which (CH 3 ) 3 Al is aluminum source, high-purity H 2 O is an oxygen source, and reacts at a substrate temperature of 150 degrees Celsius to form a 1nm-thick aluminum oxide layer. The non-stoichiometric molybdenum oxide layer is produce...

Embodiment 2

[0045] Take 156*156mm 2 The p-type polysilicon wafer with a large area is used as the initial material, which is cleaned and textured, pn junction made by phosphorus diffusion, wet edge and back polished to remove the back junction, phosphorus silicon glass is removed, silicon nitride anti-reflection layer is deposited, and super Thin aluminum oxide layer, deposit non-stoichiometric molybdenum oxide layer, print back silver electrode, print front silver grid line electrode, and sintering process to obtain back passivation polycrystalline silicon solar cell. The ultra-thin aluminum oxide layer is prepared by atomic layer deposition method, in which (CH 3 ) 3 Al is aluminum source, high-purity H 2 O is an oxygen source, and reacts at a substrate temperature of 150 degrees Celsius to form a 1nm-thick aluminum oxide layer. The non-stoichiometric molybdenum oxide layer is produced by thermal evaporation. In the process, molybdenum oxide powder with a purity greater than 99.9% is...

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Abstract

The invention discloses a back passivation crystal silicon solar battery and a preparation method thereof. An ultra-thin aluminum oxide and high-power function transition metal oxide laminated passivation film is formed on the back surface of the solar battery back passivation crystal silicon solar battery, and is arranged between p type crystal silicon and a back electrode; ultra-thin aluminum oxide and high-power function transition metal oxide laminated films are used for passivating and contacting the back surface of the p type crystal silicon. The preparation method comprises the following steps that an atom layer deposition method is used for preparing an ultra-thin aluminum oxide layer; a metal oxide layer is prepared by a heat evaporation method or a plasma enhanced atom layer deposition method. The back passivation crystal silicon solar battery and the preparation method have the advantages that the back surface light loss and the current carrier composite loss can be reduced, so that the photoelectric conversion efficiency of the battery can be improved; meanwhile, the electron hole collection and transmission can be realized through ultra-thin aluminum oxide and high-power function transition metal oxide lamination; the preparation obtianign can be realized only through atom layer deposition and heat evaporation film plating process; the further use of laser hole forming process with high process difficulty and high required equipment cost can be avoided.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic solar energy, and in particular relates to a back passivated crystalline silicon solar cell and a preparation method thereof. Background technique [0002] The photoelectric conversion efficiency of crystalline silicon solar cells affects the development of the photovoltaic industry and determines the core competitiveness of photovoltaic companies. How to improve the photoelectric conversion efficiency of crystalline silicon solar cells has attracted much attention from the industry. The back surface of the current mainstream crystalline silicon solar cell products adopts an aluminum back field (Al-BSF) structure, and the back aluminum electrode is in direct contact with the crystalline silicon. Among them, the absorption coefficient of long-wave photons in the 950-1200nm spectral range in crystalline silicon is less than 5×10 2 / cm, resulting in incomplete absorption incident on the back su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/0216H01L31/18
CPCH01L31/02167H01L31/0352H01L31/18Y02E10/50Y02P70/50
Inventor 吕文辉王行柱朱训进吴卫平黄维扬
Owner 王行柱
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