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37 results about "Large series" patented technology

Cervical acid phosphatase - papanicolaou (CAP-PAP) test kit, method and accesories, processes for producing and using the same

Cervical Acid Phosphatase-Papanicolaou Test Kit (CPK) is an assembly of reagents, controls and instructions for visualization of cervical acid phosphatase on smears or monolayers of cervical specimens, and for performing the CAP-PAP Test (CPT). CPT is a single-slide, double-staining method for demonstration of cervical acid phosphatase activity inside abnormal cervical cells on Papanicolaou stained smears, and a set of criteria for using this test for cervical cancer screening. In previous clinical trials this method was found to enable Pap test screeners to improve test sensitivity (detection of abnormal cells) for more than 10% (from 0.8 to 0.9), and to reduce false negative readings (missing abnormal cells) for more than 50% (from 0.1 to 0.02). Due to better accuracy and the low cost, when approved, CPT may begin to replace current technologies for cervical cancer screening. CPK is designed to meet requirements for testing large series of specimens on regular basis-the usual practice in cytopathology laboratories performing the Pap test. CPK brings consistency for staining and interpretation, makes internal and external controls easier, and improves the test accuracy for lower cost, while increases laboratory productivity for less liability.
Owner:MARKOVIC NENAD S +1

Distributed clustering method based on spatial information

The invention relates to the technical field of electronic reconnaissance, and discloses a distributed clustering method based on spatial information. The distributed clustering method comprises the following steps: constructing a distributed system with N nodes; taking any node as a central node, and receiving pulse information transmitted by other nodes in real time through a link; sorting the pulse parameters of all the nodes at the central node according to arrival time; performing combined clustering on the sorted pulses according to three parameters of pulse frequency, pulse width and pulse arrival time to form combined pulse description; carrying out time difference registration marking, wherein an obtained time difference registration marking sequence corresponds to the combined pulse description; and carrying out joint clustering on the marked joint pulses by utilizing marking information and combining pulse parameters. According to the distributed clustering method, the defects that traditional pulse clustering is poor in adaptability to complex and changeable situations such as pulse repetition interval large-series difference, jitter, pulse-to-pulse coding and modulation, and intra-pulse modulation information needs to be effectively extracted in real time are overcome, and the adaptability of the pulse clustering method is improved.
Owner:SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP

Environmentally-friendly low-series resistance crystalline silicon solar cell back electrode silver paste

The invention relates to a silicon solar cell back electrode raw material, in particular, an environmentally-friendly low-series resistance crystalline silicon solar cell back electrode silver paste. With the environmentally-friendly low-series resistance crystalline silicon solar cell back electrode silver paste of the invention adopted, the problems of poor printing performance, large series resistance and low photoelectric conversion efficiency of the components of a silicon solar cell back electrode can be solved. The environmentally-friendly low-series resistance crystalline silicon solar cell back electrode silver paste is composed of the following components in part by weight: 50 to 58 parts of silver aluminum mixed powder, 1 to 3 parts of lead-free glass powder, 0.1 to 1 part of inorganic additive, and 39 to 48 parts of organic adhesive; the fine degree of the silver paste is smaller than 15 micron; and the viscosity of the silver paste ranges from30 to 60Pa.s. According to the environmentally-friendly low-series resistance crystalline silicon solar cell back electrode silver paste of the invention, irregularly-shaped silver powder and spherical aluminum powder are adopted as the base materials of the silver paste; a uniform and compact silver conductive layer is formed on the back surface of a silicon wafer in a high-temperature sintering treatment process, and excellent ohmic contact can be realized between the silver conductive layer and an aluminum back surface field as well as between the silver conductive layer and the silicon wafer; and therefore, lower series resistance and higher photoelectric conversion efficiency can be realized, and the weldability and adhesion of a back electrode can be improved, and the series resistance of a cell sheet can be small, and conversion efficiency is high.
Owner:苏州柏特瑞新材料有限公司

Series compensation platform hydraulic installation system with level adjustment function

ActiveCN102730585ASteady improvementSteady descending series compensation platformCranesSeries compensationTower
The present invention provides a series compensation platform hydraulic installation system with a level adjustment function. The system comprises: a bearing structure comprising two gate type frames, wherein each gate type frame comprises a connection section, lifting sections and two tower frames fixed on bases, one connection section is installed between the two tower frames, and one lifting section is installed on a side of each tower frame, wherein the side of each tower frame is relative to the connection section; a steel rope type hydraulic lifting apparatus, wherein the steel rope type hydraulic lifting apparatus is connected with the bearing structure, and is provided for carrying out lifting operation on the series compensation platform; an insulator installation apparatus, wherein the insulator installation apparatus is arranged below the series compensation platform, and is provided for lifting the insulator; and level adjustment mechanisms, wherein the level adjustment mechanism is provided for carrying out level adjustment on the series compensation platform. With the present invention, lifting and lowering of the series compensation platform by the system provide advantages of stability, less impact, flexible position adjustment, safety, reliability, and the like; jamming phenomenon of the level adjustment mechanism and the series compensation platform during adjustment of the level position of the series compensation platform can be avoided; and the system can be used for installation constructions of various types of series compensation platforms (especially high-voltage level large series compensation platforms).
Owner:CHINA ELECTRIC POWER RES INST +1

Heterojunction back-contact solar cell and fabrication method thereof

The invention aims to disclose a heterojunction back-contact solar cell and a fabrication method thereof. The heterojunction back-contact solar cell comprises an N-type single-crystal silicon matrix,wherein a front surface P+ doping layer and an anti-reflection layer are sequentially arranged on a front surface of the N-type single-crystal silicon matrix, an intrinsic amorphous silicon layer is arranged on a back surface of the N-type single-crystal silicon matrix, an N-type amorphous silicon doping layer and a P-type amorphous silicon doping layer are arranged on a back surface of the intrinsic amorphous silicon layer, an insulation isolation layer is arranged between the N-type amorphous silicon doping layer and the P-type amorphous silicon doping layer, the N-type amorphous silicon doping layer is connected with a negative electrode by a TCO layer, and the P-type amorphous silicon doping layer is connected with a positive electrode by the TCO layer. Compared with the prior art, theprocess difficulty is reduced, the amorphous silicon equivalent passivation effect is achieved, the carrier surface recombination is reduced, the size proportion of a back-surface emitter to a back-surface field of the cell is changed, and the problem of relatively large series resistance of minority carrier and majority carrier during the transmission process is prevented.
Owner:SPIC XIAN SOLAR POWER CO LTD +2

Intelligent flexible assembly line

The invention provides an intelligent flexible assembly line comprising a first assembly line, a second assembly line and a third assembly line. The first assembly line comprises a first bracket and aconveying roller arranged on the first bracket, the second assembly line and the first assembly line are oppositely arranged side by side, the second assembly line comprises a second bracket and a conveying roller arranged on the second bracket, the first bracket and the second bracket are each provided a transfer device so ad to be folded to the third assembly line, and the transfer devices areprovided with bull eye balls; and the third assembly line is arranged between the first assembly line and the second assembly line, the third assembly line includes a third bracket and a conveying roller arranged on the third bracket, the open end of the third bracket is connected to the tail ends of the first bracket and the second bracket, the third bracket comprises a third upper-layer bracketand a third lower-layer bracket, and the first bracket, the second bracket and the third bracket are provided with assembly stations. By means of the technical scheme, the assembly line can be used for assembling large-series products and can be used for assembling multiple sub-products under the large-series products.
Owner:浙江中冀科技有限公司

Method for sintering solar battery cell

The embodiment of the invention discloses a method for sintering a solar battery cell, comprising the following steps of: screening out a batter cell with larger series resistance in the solar battery cells after being sintered through a silk screen; and sintering the screened battery cell again in order to decrease series resistance of the screened battery cell, wherein the temperature of the secondary sintering is lower than normal sintering temperature. In the method provided by the embodiment of the invention, by screening out the batter cell with the larger series resistance and sintering the screened battery cell again, the defects of the screened battery cell are the sintering defects of the battery cell caused by the disturbance of gas atmosphere in a sintering furnace in the sintering process, the sintering defects also cause low conversion efficiency, the screened battery cell is sintered again at the temperature lower than the normal sintering temperature, and a smooth and uniformly distributed Al-Si alloy layer can be arranged on the surface of a back surface filed in order to compensate for local or large-scale sintering shortage of the back surface field in normal sintering process; therefore, the series resistance of the battery cell is decreased, the conversion efficiency of a crystalline silicon solar battery cell, and the economic benefit is improved.
Owner:JETION SOLAR HLDG

P-type ZnO and n-type GaN combined ZnO-based light-emitting devices and manufacturing methods thereof

InactiveCN102194943AOvercome the disadvantage of low output powerMature manufacturing technologySemiconductor devicesLower limitEngineering
The invention belongs to the technical fields of semiconductor light-emitting devices and manufacturing methods thereof and in particular relates to a plurality of kinds of p-type ZnO and n-type GaN combined ZnO-based light-emitting devices and manufacturing methods thereof. One device comprises a substrate, a GaN epitaxial layer, a current lower limiting layer, a lower electrode, a ZnO-based light-emitting layer and an upper electrode, wherein the GaN epitaxial layer epitaxially grows on the substrate; the current lower limiting layer and the lower electrode are manufactured on the epitaxiallayer in a mutually discrete way; the ZnO-based light-emitting layer is manufactured on the current lower limiting layer; and the upper electrode is manufactured on the ZnO-based light-emitting layer; and more particularly, the GaN epitaxial layer is an n-type GaN film, the current lower limiting layer is an n-type AlGaN/Ga2O3 film, and the ZnO-based light-emitting layer is a p-type ZnO-based film. The invention also relates to a ZnO-based light-emitting device with the current lower limiting layer and a ZnO-based light-emitting device with a current upper limiting layer. By means of the p-type ZnO and n-type GaN combined ZnO-based light-emitting devices and the manufacturing methods thereof disclosed by the invention, the defects, such as lower concentration of a p-type GaN epitaxial carrier, large series resistance of the device, high working voltage of the device, and low output power of the device are overcome, and the application range of the devices is further broadened.
Owner:EPITOP PHOTOELECTRIC TECH
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