Preparation method for full-silicification metal gate silicon multi-gate fin field effect transistor

Abstract

The invention discloses a preparation method for a full-silicification metal gate silicon multi-gate fin field effect transistor. The preparation method comprises the steps: forming fins on a semiconductor substrate; forming gate piling structures at the top and on the side surfaces of the fins; forming source / drain extension area structures in the fins at two sides of the gate piling structures; forming source / drain structures at two sides of the source / drain extension areas; carrying out source / drain silicification; forming full-silicification metal gate electrodes; and contacting and metalizing. According to the preparation method, self-heating effect and floating body effect of SOI (Silicon-On-Insulator) device can be eliminated, and lower cost can be realized; the defects of polycrystalline silicon depletion effect, boron penetration effect, large series resistance and the like can be overcome; and the full-silicification metal gate silicon multi-gate fin field effect transistor can be well compatible with CMOS (Complementary Metal-Oxide-Semiconductor Transistor) plane process, thus being easy to integrate.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing a fully silicided metal gate body silicon multi-gate fin field effect transistor. Background technique [0002] As the integrated circuit industry continues to develop in accordance with Moore's law, the feature size of CMOS devices continues to shrink, and planar bulk silicon CMOS devices have encountered severe challenges. In order to overcome these problems, it is necessary to find solutions from many aspects such as new materials, new processes, and new structures. [0003] In the field of new materials, metal gate electrode technology is a very important technology. The use of metal gate electrodes can fundamentally eliminate the polysilicon gate depletion effect and the boron (B) penetration effect of P-type field effect transistors, while obtaining very low The gate sheet resistance. Among various metal gate preparation methods, fully silici...

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Problems solved by technology

However, SOI FinFET has disadvantages such as high preparation cost, poor heat dissipation, floating body effect and self-heating effect.

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