Heterojunction back-contact solar cell and fabrication method thereof

A solar cell and back contact technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems affecting battery conversion efficiency, increase in series resistance, light absorption loss, etc.

Inactive Publication Date: 2019-07-23
SPIC XIAN SOLAR POWER CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In the existing heterojunction back-contact solar cells, because the front surface field passivation structure (FSF) is adopted, the proportion of the field width of the back surface of the cell is small, resulting in the transmission of many electrons generated above the emitter to the BSF. The increase of the series resistance in the process of the region affects the improvement of the battery conversion efficiency to a certain extent.
[0006] At the same time, most of the existing structures of heterojunction back-contact solar cells use intrinsic amorphous silicon as passivation on the front and back of the cell, but in the actual industrialization process, the doped amorphous silicon on the front surface and the intrinsic The amorphous silicon layer will cause a certain loss of light absorption and make the manufacturing process of the cell more difficult.

Method used

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  • Heterojunction back-contact solar cell and fabrication method thereof
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Embodiment

[0036] like figure 1 As shown, the heterojunction back-contact solar cell of the present invention includes an N-type monocrystalline silicon substrate 1, and a front surface P+ doped layer 2 and an anti-reflection layer 3 are sequentially arranged on the front of the N-type monocrystalline silicon substrate 1. An intrinsic amorphous silicon layer 4 is arranged on the back of the N-type monocrystalline silicon substrate 1, and an N-type amorphous silicon doped layer 5 and a P-type amorphous silicon doped layer 6 are respectively arranged on the back of the intrinsic amorphous silicon layer 4. , an insulating isolation layer 7 is arranged between the N-type amorphous silicon doped layer 5 and the P-type amorphous silicon doped layer 6, the N-type amorphous silicon doped layer 5 is connected to a negative electrode 9 through a TCO layer 8, and the P-type The amorphous silicon doped layer 6 is connected to a positive electrode 10 through a TCO layer 8 .

[0037] In this embodime...

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Abstract

The invention aims to disclose a heterojunction back-contact solar cell and a fabrication method thereof. The heterojunction back-contact solar cell comprises an N-type single-crystal silicon matrix,wherein a front surface P+ doping layer and an anti-reflection layer are sequentially arranged on a front surface of the N-type single-crystal silicon matrix, an intrinsic amorphous silicon layer is arranged on a back surface of the N-type single-crystal silicon matrix, an N-type amorphous silicon doping layer and a P-type amorphous silicon doping layer are arranged on a back surface of the intrinsic amorphous silicon layer, an insulation isolation layer is arranged between the N-type amorphous silicon doping layer and the P-type amorphous silicon doping layer, the N-type amorphous silicon doping layer is connected with a negative electrode by a TCO layer, and the P-type amorphous silicon doping layer is connected with a positive electrode by the TCO layer. Compared with the prior art, theprocess difficulty is reduced, the amorphous silicon equivalent passivation effect is achieved, the carrier surface recombination is reduced, the size proportion of a back-surface emitter to a back-surface field of the cell is changed, and the problem of relatively large series resistance of minority carrier and majority carrier during the transmission process is prevented.

Description

technical field [0001] The invention relates to a solar cell and a preparation method thereof, in particular to a heterojunction back contact solar cell and a preparation method thereof. Background technique [0002] With the gradual depletion of fossil energy and the increasing awareness of environmental protection, people are increasingly aware of the importance of developing renewable energy. Solar energy is a clean and renewable energy, inexhaustible and inexhaustible. The development and utilization of solar energy has little pollution to the environment, can provide sufficient energy for human beings, and will not affect the ecological balance of nature. Compared with other new energy sources such as wind energy, geothermal energy and tidal energy, solar energy has a high utilization rate, With many advantages such as wide distribution of resources and safe and reliable use, it has become one of the most promising energy sources. [0003] N-type heterojunction back c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/074H01L31/18
CPCH01L31/02168H01L31/022441H01L31/074H01L31/1804Y02E10/547Y02P70/50
Inventor 高嘉庆
Owner SPIC XIAN SOLAR POWER CO LTD
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