Polysilicon surface reverse pyramid structure and preparation method thereof

An inverted pyramid, polysilicon technology, applied in the field of solar cells, can solve the problems of decreased solar cell efficiency, contamination of impurities on the surface, small structure, etc., and achieves the effect of significant light trapping effect, reduced surface recombination, and easy reflectivity.

Active Publication Date: 2016-03-23
江苏辉伦太阳能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this original black silicon nano-light trapping structure usually has a small structure, dense, deep and many defects, and even impurities stain the surface. Although it has obvious optical advantages, it does not match the current manufacturing process of crystalline silicon solar cells.
If the black silicon structure is not optimized, it will lead to serious surface recombination and reduce the efficiency of solar cells

Method used

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  • Polysilicon surface reverse pyramid structure and preparation method thereof
  • Polysilicon surface reverse pyramid structure and preparation method thereof
  • Polysilicon surface reverse pyramid structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A kind of manufacturing method of polycrystalline surface inverted pyramid structure texture, comprises the following steps:

[0030] Step 1. Select P-type polysilicon material with a size of 156cm*156cm and a thickness of 200um. Place the polysilicon wafer in hydrofluoric acid and HNO 3 Corrosion in the mixed solution to remove the surface mechanical damage layer;

[0031] Step 2. Use metal ion assisted etching method to make black silicon, place the silicon wafer in the mixed solution of hydrofluoric acid and silver nitrate to deposit silver particles for 10s, the reaction temperature is 8°C, and then deposit the deposited polysilicon The sheet was placed in a mixed solution of hydrofluoric acid and hydrogen peroxide for 500s of chemical corrosion, and the reaction temperature was 60°C to obtain a nano-black silicon sample;

[0032] Step 3, then soak the black silicon sample in a mixture of ammonia water, hydrogen peroxide and ethanolamine for 60s at a reaction tempe...

Embodiment 2

[0039] A kind of manufacturing method of polycrystalline surface inverted pyramid structure texture, comprises the following steps:

[0040] Step 1. Select P-type polysilicon material with a size of 156cm*156cm and a thickness of 200um. Place the polysilicon wafer in hydrofluoric acid and HNO 3 Corrosion in the mixed solution to remove the surface mechanical damage layer;

[0041] Step 2. Use metal ion assisted etching method to make black silicon, place polysilicon wafer in a mixed solution of hydrofluoric acid and silver nitrate to deposit silver particles for 50s, the reaction temperature is 20°C, and then deposit the deposited silicon The sheet was chemically etched in a mixed solution of hydrofluoric acid and hydrogen peroxide for 300s at a reaction temperature of 40°C to obtain a nano-sized black silicon sample;

[0042] Step 3, then soak the black silicon sample in a mixture of ammonia water, hydrogen peroxide and ethanolamine for 300s, and the reaction temperature is ...

Embodiment 3

[0049] A kind of manufacturing method of polycrystalline surface inverted pyramid structure texture, comprises the following steps:

[0050] Step 1. Select P-type polysilicon material with a size of 156cm*156cm and a thickness of 200um. Place the polysilicon wafer in hydrofluoric acid and HNO 3 Corrosion in the mixed solution to remove the surface mechanical damage layer;

[0051] Step 2. Use metal ion assisted etching method to make black silicon, place polysilicon wafer in a mixed solution of hydrofluoric acid and silver nitrate to deposit silver particles for 50s, the reaction temperature is 20°C, and then deposit the deposited silicon The sheet was chemically etched in a mixed solution of hydrofluoric acid and hydrogen peroxide for 300s at a reaction temperature of 40°C to obtain a nano-sized black silicon sample;

[0052] Step 3, then soak the black silicon sample in a mixture of ammonia water, hydrogen peroxide and ethanolamine for 300s, and the reaction temperature is ...

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Abstract

The invention discloses a polysilicon surface reverse pyramid structure and a preparation method thereof. Back silicon is manufactured by use of different methods, then, a sample is placed in a mixed liquid of hydrogen peroxide and ethanolamine, then washed black silicon is placed in a mixed liquid of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride for reprocessing, and thus the polysilicon surface reverse pyramid structure is formed. According to the invention, by use of a wet chemical method different from soda acid corrosion, the method can reduce the influence of anisotropy to the maximum degree, and the back silicon with different nano structures is enabled to have a nanometer textured structure with a regular reverse pyramid structure through oxidation corrosion. Compared to a conventional polysilicon textured structure, the polysilicon reverse pyramid light tripping structure is higher in utilization rate of light and lower in reflectivity. Due to the feature of its reverse pyramid structure, compared to high surface recombination of the small yet dense structure of conventional black silicon, the surface recombination of the polysilicon surface reverse pyramid structure is obviously reduced, and the efficiency of a solar battery is higher.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to an inverted pyramid structure on the surface of polycrystalline silicon and a preparation method thereof. Background technique [0002] Conventional polysilicon textured surfaces are all micron-scale worm-like structures. Polycrystalline silicon textured surfaces are made by utilizing the anisotropic properties of silicon, and using acid corrosion to form a honeycomb structure on the surface, which has a certain light trapping effect and can reduce the surface of the silicon wafer. Reflectivity. [0003] There is also a new nano-light-trapping structure, which is generally called "black silicon", which has a good The light trapping effect can significantly reduce the reflectivity of the silicon wafer surface, and is considered to be a structure that can effectively improve the conversion efficiency of solar cells. At present, there are many laboratories that can prepare bla...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236
CPCH01L31/02363Y02E10/50Y02P70/50
Inventor 蒲天罗旌旺吴兢芮春保
Owner 江苏辉伦太阳能科技有限公司
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