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Crystalline silicon solar cell and diffusion method therefor

A technology of solar cells and diffusion methods, applied in the field of crystalline silicon solar cells and their diffusion, can solve the problems of high doping concentration, low short-circuit current, and reduced minority carrier lifetime, etc.

Inactive Publication Date: 2015-11-18
CSG PVTECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The diffusion process of solar cells is the key to the preparation of solar cells. The silicon wafer surface made by the existing diffusion process of solar cells has a higher doping concentration and a thicker dead layer, which reduces the minority carrier lifetime and leads to a lower short-circuit current.

Method used

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  • Crystalline silicon solar cell and diffusion method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] The diffusion steps of the crystalline silicon solar cell of the present embodiment are as follows:

[0056] (1) Insert the silicon chip after the texturing in the groove of the quartz boat, and place a piece of silicon chip in each groove, the thickness of the silicon chip is 170 microns, the quartz boat with the silicon chip will be inserted in the drive of the guide rail down into the diffusion furnace.

[0057] (2) Heat up the diffusion furnace to 800° C., feed oxygen and nitrogen into the diffusion furnace, keep warm and diffuse for 2 minutes, wherein the flow rate of oxygen is 1000 sccm, and the flow rate of nitrogen gas is 30 slm.

[0058] (3) Feed the first diffusion nitrogen, oxygen and nitrogen into the diffusion furnace, and insulate and diffuse at 800°C for 15 minutes, wherein the flow of the first diffusion nitrogen is 2000sccm, the flow of oxygen is 1000sccm, and the flow of nitrogen is 30slm.

[0059] (4) The temperature of the diffusion furnace was rais...

Embodiment 2

[0065] The diffusion steps of the crystalline silicon solar cell of the present embodiment are as follows:

[0066] (1) Insert the silicon chip after texturing in the groove of the quartz boat, and place a piece of silicon chip in each groove. The thickness of the silicon chip is 200 microns, and the quartz boat inserted with the silicon chip is driven by the rail down into the diffusion furnace.

[0067] (2) Heat up the diffusion furnace to 820° C., feed oxygen and nitrogen into the diffusion furnace, keep warm and diffuse for 5 minutes, wherein the flow rate of oxygen is 2000 sccm, and the flow rate of nitrogen is 18 slm.

[0068] (3) Feed the first diffusion nitrogen, oxygen and nitrogen into the diffusion furnace, and insulate and diffuse at 820° C. for 10 minutes, wherein the flow of the first diffusion nitrogen is 3500 sccm, the flow of oxygen is 2000 sccm, and the flow of nitrogen is 18 slm.

[0069] (4) The temperature of the diffusion furnace was raised to 890° C., a...

Embodiment 3

[0075] The diffusion steps of the crystalline silicon solar cell of the present embodiment are as follows:

[0076] (1) Insert the silicon chip after texturing in the groove of the quartz boat, and place a piece of silicon chip in each groove. The thickness of the silicon chip is 200 microns, and the quartz boat inserted with the silicon chip is driven by the rail down into the diffusion furnace.

[0077] (2) Heat up the diffusion furnace to 810° C., feed oxygen and nitrogen into the diffusion furnace, keep warm and diffuse for 3 minutes, wherein the flow rate of oxygen is 1500 sccm, and the flow rate of nitrogen gas is 24 slm.

[0078] (3) Feed the first diffusion nitrogen, oxygen and nitrogen into the diffusion furnace, and insulate and diffuse at 810° C. for 12 minutes, wherein the flow of the first diffusion nitrogen is 3000 sccm, the flow of oxygen is 1500 sccm, and the flow of nitrogen is 24 slm.

[0079] (4) The temperature of the diffusion furnace was raised to 870° C...

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Abstract

The invention relates to a crystalline silicon solar cell and a diffusion method therefor. The method comprises the following steps: 1, carrying out the heat preservation and oxidation of a silicon chip under the temperature from 800 DEG C to 820 DEG C under the condition of oxygen gas and nitrogen gas; 2, carrying out the heat preservation diffusion of the silicon chip under the temperature from 800 DEG C to 820 DEG C under the condition of diffused nitrogen, oxygen gas and nitrogen gas; 3, carrying out the heat preservation diffusion of the silicon chip under the temperature from 860 DEG C to 890 DEG C under the condition of nitrogen gas; 4, carrying out the heat preservation diffusion of the silicon chip under the temperature from 810 DEG C to 850 DEG C under the condition of oxygen gas and diffused nitrogen; 5, carrying out the heat preservation reaction of the silicon chip under the temperature from 810 DEG C to 850 DEG C under the condition of oxygen gas and nitrogen gas, wherein the diffused nitrogen is nitrogen containing phosphorus oxychloride. Moreover, the flow of the diffused nitrogen at step 4 is smaller than the flow of the diffused nitrogen at step 2. The method can increase the short-circuit current of the crystalline silicon solar cell.

Description

technical field [0001] The invention relates to the field of solar cell manufacture, in particular to a crystalline silicon solar cell and a diffusion method thereof. Background technique [0002] A solar cell is a device that directly converts light energy into electrical energy through the photoelectric effect or photochemical effect. When non-renewable energy sources such as electricity, coal, and oil are running out frequently, and energy issues have increasingly become a bottleneck restricting the development of the international society and economy, more and more countries have begun to implement the "Sunshine Plan" to develop solar energy resources and seek new impetus for economic development. The diffusion process of solar cells is the key to the preparation of solar cells. The existing diffusion process of solar cells produces silicon wafers with high doping concentration on the surface and thick dead layer, which reduces the minority carrier lifetime and leads to ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/223
CPCH01L21/223H01L31/18H01L31/186Y02E10/50Y02P70/50
Inventor 梁杭伟李家兰叶雄新孙小菩彭华
Owner CSG PVTECH
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