Silicon nanowire radial heterojunction solar battery manufacture method

A technology of solar cells and silicon nanowires, applied in nanotechnology, circuits, photovoltaic power generation, etc., can solve problems such as unsatisfactory passivation effect, unstable plasma, difficult conformal deposition of amorphous silicon thin films, etc., and achieve a good interface Passivation effect, efficiency improvement, effect of reducing sample surface recombination

Inactive Publication Date: 2014-05-07
UNIVERSITY OF CHINESE ACADEMY OF SCIENCES
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Problems solved by technology

At present, many scientific research institutes in the world have begun to study silicon nanowire radial heterojunction solar cells, and some results have been reported one after another, but they all use the plasma enhanced chemical vapor deposition (PECVD) method to prepare amorphous silicon thin films. This method is not only difficult to achieve good co

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  • Silicon nanowire radial heterojunction solar battery manufacture method
  • Silicon nanowire radial heterojunction solar battery manufacture method
  • Silicon nanowire radial heterojunction solar battery manufacture method

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preparation example Construction

[0024] The preparation method of the silicon nanowire radial heterojunction solar cell proposed by the present invention, the structure of the solar cell is as follows figure 1 shown, including the following steps:

[0025] (1) Forming vertical nanowires 8 with a diameter of 20 to 2000 nanometers and a height of 100 to 10000 nanometers on the upper surface of the p-type single crystal silicon wafer 3 by wet etching, and placing the nanowires 8 on the upper surface Silicon wafers are cleaned;

[0026] (2) Put the sample obtained in step (1) into the cavity of the thermal evaporation equipment, and the vacuum in the cavity reaches 3×10 -4 After Pa, high-purity aluminum is evaporated, and a metal aluminum film with a thickness of 1-2 microns is deposited on the lower surface of the sample;

[0027] (3) Put the sample obtained in step (2) into a quartz furnace, pass a mixed gas of nitrogen and oxygen, wherein the volume ratio of nitrogen and oxygen is 95:5, and keep it at 930°C ...

Embodiment 1

[0039] (1) Use wet etching to etch the upper surface of p-type single crystal silicon wafer (zone melting single crystal, crystal orientation, resistivity 1~3Ω·cm) to form nanowires with a height of 6000 nanometers , put the sample in a mixed solution of concentrated sulfuric acid and hydrogen peroxide, wash it at 120°C for 30 minutes, wherein the volume fraction ratio of concentrated sulfuric acid and hydrogen peroxide is 7:3, and then clean it with deionized water; then, put the sample in ammonia water , hydrogen peroxide and isopropanol in a mixed aqueous solution, washed at 80 ° C for 10 minutes, and then cleaned with deionized water, wherein the volume fraction ratio of ammonia, hydrogen peroxide, isopropanol and water is 1:2:0.5:5, Finally, the sample was placed in an aqueous solution of hydrochloric acid and hydrogen peroxide, washed at 80°C for 7 minutes, and then thoroughly cleaned with deionized water for later use. The volume fraction ratio of hydrochloric acid, hyd...

Embodiment 2

[0049] (1) Use wet etching to etch nanowires on the surface of p-type single crystal silicon wafers (zone melting single crystal, crystal orientation, resistivity 1-3Ω·cm), the height of the nanowires is 1000 nm, and the sample Put it into a mixed solution of concentrated sulfuric acid and hydrogen peroxide, and wash it at 120°C for 30 minutes, wherein the volume fraction ratio of concentrated sulfuric acid and hydrogen peroxide is 7:3, and then clean it with deionized water; then, put the sample into ammonia water, hydrogen peroxide and In a mixed aqueous solution of isopropanol, wash at 80°C for 10 minutes, and then clean it with deionized water. The volume fraction ratio of ammonia water, hydrogen peroxide, isopropanol and water is 1:2:0.5:5, and finally put the sample Put it into an aqueous solution of hydrochloric acid and hydrogen peroxide, wash it at 80°C for 7 minutes, and then wash it thoroughly with deionized water for later use. The volume fraction ratio of hydrochl...

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Abstract

The invention relates to a silicon nanowire radial heterojunction solar battery manufacture method and belongs to the photovoltaic technical field. By means of a hot filament chemical vapor deposition technology, intrinsic and n-type amorphous silicon membranes are sequentially subjected to conformal deposition on a monocrystalline silicon piece with nanowires to manufacture a silicon nanowire radial heterojunction solar battery with the structure of n-a-Si: H/i-a-Si: H/p-c-SiNW. By the aid of good atom hydrogen treatment and intrinsic amorphous silicon passivation capacities of the hot filament chemical vapor deposition technology, properties of the manufactured nanowire radial heterojunction solar battery are substantially improved; the nanowire radial heterojunction solar battery has a novel structure, good properties and wide application values in the photovoltaic field.

Description

technical field [0001] The invention relates to a preparation method of a silicon nanowire radial heterojunction solar cell, which belongs to the field of photovoltaic technology. Background technique [0002] The light absorption and carrier transport directions of traditional planar junction solar cells are parallel, and the two are also a contradiction: in order to fully absorb light, the material must be thick enough, and in terms of electrical transport, in order to be able to To realize the effective collection of carriers, the material is required to be sufficiently thin. This shortcoming seriously affects the further improvement of the performance of traditional planar solar cells. Therefore, research on new structural solar cells is imperative. The preparation of radial p-n junction solar cells on nanowires can not only take advantage of the good light trapping effect of nanowire structures, but also solve the contradictions in light absorption and carrier transpo...

Claims

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Application Information

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IPC IPC(8): H01L31/20B82Y40/00
CPCC23C16/24C23C16/455H01L31/202Y02E10/50Y02P70/50
Inventor 董刚强张海龙刘丰珍
Owner UNIVERSITY OF CHINESE ACADEMY OF SCIENCES
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