A plasma modified ultrafiltration membrane treatment system

A plasma and treatment system technology, applied in the field of plasma modified ultrafiltration membrane treatment system, can solve problems such as uneven film thickness, and achieve the effect of increasing collision cross-section and increasing density

Active Publication Date: 2019-03-08
四川恒创博联科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the above-mentioned deficiencies in the prior art, a plasma-modified ultrafiltration membrane treatment system provided by the present invention solves the problem of uneven film thickness when the existing plasma-modified system works

Method used

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  • A plasma modified ultrafiltration membrane treatment system
  • A plasma modified ultrafiltration membrane treatment system
  • A plasma modified ultrafiltration membrane treatment system

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Embodiment Construction

[0032] Specific embodiments of the present invention are described below so that those skilled in the art can understand the present invention, but it should be clear that the present invention is not limited to the scope of specific embodiments. For those of ordinary skill in the art, as long as various changes Within the spirit and scope of the present invention defined and determined by the appended claims, these changes are obvious, and all inventions and creations using the concept of the present invention are included in the protection list.

[0033] Such as figure 1 and figure 2 As shown, the plasma modified ultrafiltration membrane processing system includes a working chamber 2, a discharge chamber 1 is arranged above the working chamber 2, and a master control box 401 is arranged on one side of the discharge chamber 1; unit and the plasma power supply module, the control panel 402 connected to the control unit is arranged on the master control box 401; two electrode...

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Abstract

The invention discloses a plasma modified ultrafiltration membrane processing system which comprises a working room which is provided with a discharge chamber. One side of the discharge chamber is provided with a master control box which is internally provided with a control unit and a plasma power supply module. The master control box is provided with a control panel connected to the control unit. The discharge chamber is internally provided with electrodes which just face the plasma power supply module and are connected to the plasma power supply module. The working room is internally provided with an ultrafiltration membrane loading component. The bottom of the working room is provided with an extraction opening which is connected to a vacuum machine set. The vacuum machine set is connected to the control unit. The ultrafiltration membrane loading component comprises a stepping device connected to the control unit, and the stepping device is movably connected to a substrate holder for storing an ultrafiltration membrane through at least one threaded rod. According to the system, the thickness of a film formed on the ultrafiltration membrane is uniform, the output of the plasma power supply module is stable, the accidental tripping protection can be carried out, and the safety of the system is effectively improved.

Description

technical field [0001] The invention relates to an ultrafiltration membrane treatment system, in particular to a plasma modified ultrafiltration membrane treatment system. Background technique [0002] The plasma surface modification process uses various surface coatings and surface modification technologies to endow the base material with special mechanical, physical or chemical properties that it does not have. The existing plasma modification system has the following problems: [0003] 1. Uneven film thickness; [0004] 2. When depositing certain semiconductors, doping semiconductors, and conductors, it is inevitable to form a thin film on the surface of the quartz glass tube. These thin films have a certain electrical conductivity. When the thin film gradually becomes thicker, there is a skin effect, which affects the microwave. Propagation in the coaxial waveguide with plasma as the outer conductor and breakdown discharge in the gas, which is not conducive to the cont...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01J37/317B01D61/14
CPCB01D61/145H01J37/3178H01J37/32431H01J37/32798
Inventor 陈伟冯再
Owner 四川恒创博联科技有限责任公司
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