Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film crystal silicon perovskite heterojunction solar cell manufacturing method

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low yield, many process steps, and small size of thin-film crystalline silicon

Inactive Publication Date: 2016-01-13
HEBEI UNIV OF TECH
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a method for preparing a thin-film crystalline silicon perovskite heterojunction solar cell, which is a method for preparing a thin-film crystalline silicon perovskite heterojunction solar cell based on an excimer laser crystallization method. The preparation method, the thin film crystalline silicon layer in the thin film crystalline silicon perovskite heterojunction solar cell is prepared by excimer laser crystallization, which overcomes the " "Layer transfer technology" results in many and complex process steps, the small size of the obtained thin-film silicon, low yield and the defects that the thickness of thin-film silicon cannot be too thin

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film crystal silicon perovskite heterojunction solar cell manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] A method for preparing a thin-film crystalline silicon perovskite heterojunction solar cell in this embodiment is a method for preparing a thin-film crystalline silicon perovskite heterojunction solar cell based on an excimer laser crystallization method, and the steps are as follows:

[0057] The first step is to prepare a P-type thin film crystalline silicon layer on the transparent conductive substrate of the AZO transparent oxide conductive layer based on glass:

[0058] (1.1) Preparation of P-type α-Si:H amorphous silicon thin film: Place the transparent conductive substrate of the AZO transparent oxide conductive layer based on glass on the sample stage of the PECVD equipment, and through the PECVD method, the reaction pressure is 5Pa. Bottom temperature 50°C, SiH 4 The gas flow rate is 0.lsccm, H 2 Gas flow rate is 1sccm, PH 3 Under the condition that the gas flow rate is 0.000lsccm, a 20nm thick P-type α-Si:H amorphous silicon film is grown on a transparent co...

Embodiment 2

[0078] A method for preparing a thin-film crystalline silicon perovskite heterojunction solar cell is a method for preparing a thin-film crystalline silicon perovskite heterojunction solar cell based on an excimer laser crystallization method. The steps are as follows:

[0079] The first step is to prepare a P-type thin film crystalline silicon layer on the transparent conductive substrate of the ITO transparent oxide conductive layer based on glass:

[0080] (1.1) Preparation of P-type α-Si:H amorphous silicon thin film: the transparent conductive substrate of the ITO transparent oxide conductive layer based on glass is placed on the sample stage of the PECVD equipment, and the reaction pressure is 27Pa under the reaction pressure of 27Pa. Bottom temperature 200°C, SiH 4 The gas flow rate is 5 sccm, H 2 Gas flow rate is 50sccm, PH 3 Under the condition that the gas flow rate is 0.5 sccm, a 1000nm thick P-type α-Si: H amorphous silicon film is grown on the transparent conduc...

Embodiment 3

[0100] A method for preparing a thin-film crystalline silicon perovskite heterojunction solar cell is a method for preparing a thin-film crystalline silicon perovskite heterojunction solar cell based on an excimer laser crystallization method. The steps are as follows:

[0101] The first step is to prepare a P-type thin film crystalline silicon layer on the transparent conductive substrate of the FTO transparent oxide conductive layer based on glass:

[0102] (1.1) Preparation of P-type α-Si:H amorphous silicon thin film: the transparent conductive substrate of the FTO transparent oxide conductive layer based on glass is placed on the sample stage of PECVD equipment, and the reaction pressure is 50Pa under the reaction pressure of 50Pa. Bottom temperature 350℃, SiH 4 Gas flow rate is 10sccm, H 2 Gas flow is l00sccm, PH 3 Under the condition that the gas flow rate is 1 sccm, a 2000nm thick P-type α-Si:H amorphous silicon film is grown on the transparent conductive substrate o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a thin film crystal silicon perovskite heterojunction solar cell manufacturing method, which relates to a semiconductor device manufacturing method particularly suitable for converting optical energy into electric energy, and is a manufacturing method based on an excimer laser crystallization method. The method of the invention comprises steps: the excimer laser crystallization method is used for manufacturing a P-type thin film crystal silicon layer on a transparent conductive substrate, spin coating of a perovskite light absorption layer is carried out on the P-type thin film crystal silicon layer, an electron transport layer formed by dense titanium dioxide is manufactured on the perovskite light absorption layer, a back electrode is manufactured on the electron transport layer formed by the dense titanium dioxide, and finally, a thin film crystal silicon perovskite heterojunction solar cell composed of the transparent conductive substrate, the P-type thin film crystal silicon layer, the perovskite light absorption layer, the electron transport layer formed by the dense titanium dioxide and the back electrode is manufactured. Defects that the layer transfer technique used in the prior art has multiple steps and is complicated, the obtained thin film crystal silicon has a small size, the finished product rate is low, and the thickness of the thin film crystal silicon can not be over thin can be overcome.

Description

technical field [0001] The technical proposal of the present invention relates to a preparation method of a semiconductor device specially suitable for converting light energy into electric energy, specifically a preparation method of a thin-film crystal silicon perovskite heterojunction solar cell. Background technique [0002] Compared with crystalline silicon cells, which are difficult to further reduce the manufacturing cost of crystalline silicon materials, the perovskite material CH 3 NH 3 wxya 3 (X=Cl, Br or / and I) as the main light-absorbing layer of solar cells (hereinafter referred to as perovskite solar cells) photoelectric conversion efficiency exceeds 20%, and has the advantages of thin film, room temperature solution preparation, and no rare elements Low manufacturing cost characteristics, great application prospects. In perovskite solar cells with various structures, the p-type bulk silicon material of traditional monocrystalline silicon and polycrystalline...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/421H10K30/151Y02E10/549Y02P70/50H10K30/87H10K85/50
Inventor 田汉民戎小莹毕文刚金慧娇张天杨瑞霞王伟花中秋杨帆张明兰
Owner HEBEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com