Preparing method of whole back electrode P type crystalline silicon heterojunction solar battery

Abstract

The invention discloses a preparing method of a whole back electrode P type crystalline silicon heterojunction solar battery. The method comprises the steps that nanometer suede, a P+ type boron shallow diffusion crystalline silicon layer and an SiOx passivation/SiNx anti-reflection layer are prepared on the front surface of a P type silicon substrate; a P++ type boron heavy diffusion crystalline silicon layer is prepared on the back face of the P type silicon substrate, then printing corrosion slurry is used for achieving local corrosion on the P++ type boron heavy diffusion crystalline silicon layer, an intrinsic amorphous silicon membrane layer and an n type amorphous silicon membrane layer are subjected to deposition in sequence, and intrinsic and n type amorphous silicon on the surface layer of a P++ type boron heavy diffusion crystalline silicon layer zone is removed; then a transparent conducting membrane layer is subjected to sputtering, a P zone and an N zone on the back face of the P type silicon substrate are separated through laser; and finally electrode printing is carried out, and low-temperature sintering is carried out. According to the method, all metal electrodes are moved to the back face of the battery, electrodes are not arranged on a light-borne face, component production cost is lowered, battery composite loss is lowered, accordingly, optical loss and resistance are obviously lowered, and efficiency is greatly improved.

Description

technical field [0001] The invention relates to a method for preparing a solar cell structure, in particular to a method for preparing a P-type crystalline silicon heterojunction solar cell with full back electrodes. Background technique [0002] With the continuous development of crystalline silicon solar cell technology, great achievements have been made in the research of high-efficiency monocrystalline silicon solar cell. The full back electrode (IBC) battery structure developed by Sunpower Corporation of the United States has all the grid electrodes designed to the back of the battery, and the positive and negative electrodes are arranged in a crossed manner. The mass production efficiency can reach 23%, and the highest laboratory efficiency can reach 24.2%. In April 2014, Panasonic announced that by combining heterojunction technology (HIT) and back contact electrode technology (IBC), its newly developed commercial size (143.7cm 2 ) The photoelectric conversion effici...

AI Technical Summary

Problems solved by technology

The most deadly problem is that in the CN102214720A patent "the N-type region forms a p + a-si / i-a-si / P-c-si / P + "Back side P in c-si / i-a-si / n-a-si heterojunction structure" + The existence of "c-si diffused silicon layer" leads to an increase in the potential barrier, which greatly reduces the open circuit voltage, so it is necessary to remove the N-type region of the P + Diffusion layer; and the "front surface p + Amorphous silicon film / P-type silicon substrate / P-region electrode" also makes it difficult for holes to cross the potential barrier to reach the P-region electrode

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