Silicon thin film solar cell and preparation method thereof

Abstract

The invention discloses a silicon thin film solar cell and a preparation method thereof. A plurality of layers of an n-type amorphous silicon film, an i-type amorphous silicon film and a p-type si film are sequentially overlapped on a transparent conducting substrate from bottom to top. The i-type amorphous silicon film, the n-type amorphous silicon film and a transparent conducting film (TCO) are sequentially overlapped on the p-type si film to prepare a double-junction silicon film solar cell; or a layer of Al film is directly deposited on the p-type si film to prepare a single-junction silicon film solar cell. The substrate has wide selection range and low cost, the photoelectric conversion efficiency is high, the deposition temperature is low and the technique is simple.

Description

technical field [0001] The invention relates to a silicon thin film solar cell and a preparation method thereof. Background technique [0002] Polycrystalline silicon thin-film solar cells not only have the characteristics of high efficiency, stability, non-toxicity, and abundant material sources of crystalline silicon solar cells, but also have the advantages of low cost, material saving, and simple process of thin-film solar cells, and have no light-induced degradation effect. That is, it has the dual advantages of crystalline silicon solar cells and amorphous silicon solar cells. At present, it is becoming a research hotspot all over the world. At present, there are mainly two ways to prepare polysilicon thin films: one is to use chemical vapor deposition (CVD) technology to directly prepare polysilicon thin films on substrate materials; The substrate requirements are high; the second is to prepare an amorphous silicon film first, and then crystallize the amorphous sili...

AI Technical Summary

Problems solved by technology

At present, there are mainly two ways to prepare polysilicon thin films: one is to use chemical vapor deposition (CVD) technology to directly prepare polysilicon thin films on substrate materials; The substrate requirements are high; the second is to prepare an amorphous silicon film first, and then crystallize the amorphous silicon film into a polysilicon film through laser crystallization, solid-phase crystallization or rapid heat treatment crystallization; but the laser crystallization technology requires The equipment is complicated, the production cost is high, and it is difficult to realize large-scale industrial production; while the solid-phase crystallization technology generally requires the crystallization temperature to be above 600°C, which has certain requirements for the substrate, and the crystallization time is long; the rapid heat treatment technology is due to the temperature It rises quickly, it is easy to introduce high thermal stress, and its repeatability and uniformity are poor, etc.