109 results about "Double junction" patented technology

A portable solar power source is provided which will convert solar energy into electrical energy to provide electrical power to an array of devices normally accompanying those who enjoy being in outdoor areas or on rivers or lakes. The device is made to be portable by having wheels and a handle so that it may be pulled like a cart or wagon. The portable device of the present invention further includes one or more solar panels, which are deployed from a substantially horizontal position to a substantially vertical position with respect to the transport device. In the preferred embodiment the solar panels are double junction amorphous solar panels. Such panels have the greatest efficiency and produce electrical energy from light energy even if the solar panels are not in the direct sunlight.

The invention relates to a wafer-bonding-based triple-junction solar cell and a preparation method thereof. The solar cell comprises a GaInP / GaAs double-junction cell and an InGaAsP single-junction cell of which the lattices are matched with each other, wherein the two cells are connected in series in a way of wafer bonding. The preparation method comprises the following steps of: sequentially growing and forming the GaInP / GaAs double-junction cell and the InGaAsP single-junction cell by a metal organic chemical vapor deposition (MOCVD) method and the like; thinning, polishing and cleaning the bonding face of the GaInP / GaAs double-junction cell, and bonding the GaInP / GaAs double-junction cell with the InGaAsP cell; and making an upper electrode and a lower electrode respectively form the target product. A band gap combination of 1.90eV, 1.42eV and 1.00eV can be formed; the growing difficulty of materials is reduced; solar spectrum is fully used; current mismatch between subcells and heat loss in a photoelectric conversion process are reduced; the internal quantum efficiency of a 1.00eV cell is improved at the same time; and then the cell efficiency is improved.

Provided is an integrated amorphous silicon double-junction solar cell curtain wall, comprising a plurality of photovoltaic curtain wall plates, each of which being encapsulated by a double-junction amorphous silicon solar cell chip with a glass substrate, a glass plate, a glue film, a junction box, a lead and a frame; and an electric control unit having a controller; wherein an output of the photovoltaic curtain wall plate is connected to the controller of the electric control unit. A double-junction double-layer solar cell top cell film layer and a bottom cell film layer are disposed on a glass substrate of the cell chip, each of the top cell film layer and the bottom cell film layer comprising a P-layer, an I-layer, and an N-layer; an I-layer of the top cell film layer is amorphous silicon; and an I-layer of the bottom cell film layer is amorphous silicon or amorphous germanium-silicon. The invention solves problems of solar power generation and application, and features with good energy saving effect, safety, reliability and wide applications. Generated energy of the cell chip per square meter is 30-60 W, photoelectric conversion efficiency is 5-7%, an attenuation rate is 20-30%, output efficiency after conversion is approximately 80%. The invention is usable for solar power generation and wall decoration of buildings.

The invention discloses an integrated stack double-junction perovskite solar cell and a preparation method thereof. The integrated stack double-junction perovskite solar cell is characterized in that the integrated stack double-junction perovskite solar cell comprises FTO transparent conductive glass, a high temperature sintering compact titanium dioxide layer, a wide band-gap perovskite light absorption layer, a silver nanowire transparent conductive ink intermediate electrode, a low temperature sintering compact titanium dioxide layer, a narrow band-gap perovskite light absorption layer, a hole transmission layer and a carbon electrode which are arranged from the bottom to the top in turn. Two perovskite light absorption layers with different band gaps are adopted so that range of light absorption spectrum of the cell is widened, an all-solution method preparation technology, which has advantages of ultralow energy consumption, simple technology equipment, low cost and short preparation period, is adopted, and thus photoelectric conversion efficiency of the perovskite solar cell can be greatly enhanced.

The present invention provides a low resistance high magnetoresistance (MR) device comprised of a junction of two magnetic elements separated by a magnesium oxide (MgO) layer doped with such metals as Al and Li. Such device can be used as a sensor of magnetic field in magnetic recording or as a storage element in magnetic random access memory (MRAM). The invention provides a high-MR device possessing a diode function, comprised of a double junction of two outer magnetic elements separated by two MgO insulating layer and a center MgO layer doped with such metals as Al and Li. Such device provides design advantages when used as a storage element in MRAM. The invention with MR wherein a gate electrode is placed in electrical or physical contact to the center layer of the double tunnel junction.

The invention discloses a high-efficiency low-cost copper indium gallium selenium / perovskite double-junction solar photocell prepared through an all-solution method. The double-junction solar photocell comprises a metal back electrode, a copper indium gallium selenium absorbing layer, a P-type buffer layer, a window layer, a carrier composite layer, a hole transporting layer, a perovskite absorbing layer, an electron transporting layer and a transparent oxide electrode. The high-efficiency double-junction solar photocell can be prepared through the all-solution method and has the advantages of being low in cost and capable of being produced on a large scale. Copper indium gallium selenium and perovskite serve as the absorbing layers of sunlight; on one hand, the copper indium gallium selenium with the adjustable bandwidth and the high-conversion-efficiency perovskite made of broadband gap materials can effectively cover solar spectra and be utilized efficiently; on the other hand, both the copper indium gallium selenium and the perovskite can be prepared through the all-solution method, so a whole laminating device can have higher conversion efficiency and maintain low production cost at the same time.

The invention discloses a double-junction single-photon avalanche diode and a production method thereof. Existing double-junction structures are low in photon detection efficiency. The method comprises the following steps: a p-well charge layer is formed by doping a p- substrate layer; the outer end of the p-well charge layer is doped with an inversion deep n-well; the inner end of the inversion deep n-well is doped with a control area; the outer end of the inversion deep n-well is doped with an n-well charge layer; the periphery of the n-well charge layer is doped with a p- type semiconductor layer; the outer end of the n-well charge layer is doped with a p+ type light absorption layer; an anodic electrode is placed at the outer end of the p+ type light absorption layer; the periphery of the p- type semiconductor layer is doped with an n-well layer and an n+ type semiconductor layer, and the n+ type semiconductor layer is doped into the n-well layer; a cathodic electrode is arranged at the outer end of the n+ type semiconductor layer; the outer end of the inversion deep n-well is doped with a p-well layer and a p+ type semiconductor layer, and the p+ type semiconductor layer is doped into the p-well layer; and a GND electrode is arranged at the outer end of the p+ type semiconductor layer. The double-junction single-photon avalanche diode provided by the invention has a tunable short-wave / long-wave detection function, and is higher in photon detection efficiency.

The invention relates to the field of new energy sources, in particular to a silicon-based solar cell and a preparation method thereof. A silicon-based double-junction solar cell with a homojunction and a heterojunction comprises a crystal silicon chip, a silicon-based semiconductor film, a transparent conducting film, a front side metal electrode and a back side metal electrode, wherein the crystal silicon chip is a monocrystalline silicon chip or a polycrystalline silicon chip; the homojunction is formed on the front side or the back side of the crystal silicon chip by a diffusion method and is a PN junction or a PP<->, PP<+>, NN<-> or NN<+> concentration junction; the front side of the crystal silicon chip is provided with the silicon-based semiconductor film; the silicon-based semiconductor film is an amorphous film or a nano-film of silicon, silicon / germanium or a silicon carbide material; and the heterojunction is formed between the silicon-based semiconductor film and the surface of the crystal silicon chip with the homojunction. High conversion efficiency and high cost performance of the solar cell are realized, and the consistence and stability of photoelectric performance of the cell are improved.

An improved solar powered decorative light system that can used on cloudy days and does not require the use of individual solar panels associated with each light in a decorative outdoor home holiday display. The improved solar powered decorative light system includes a plurality of decorative outdoor lights each having at least one LED and receiving electrical energy for illumination from a single solar receptor comprised of a double junction amorphous panel set. The decorative outdoor lights may further include replaceable decorative covers.

The invention provides a double-junction GaAs lamination laser photovoltaic cell which comprises a GaAs substrate, and an N-type GaAs conducting layer, a first tunnel junction, a P-type AlGaAs ((Al)GaInP) first barrier layer, a bottom battery, a second tunnel junction, a P-type AlGaAs ((Al)GaInP) second barrier layer, a top battery, an AlGaAs (Ga0.51In0.49P) window layer and a GaAs contact layer that are grown on the substrate sequentially, and further comprises an isolation trench, wherein the isolation trench penetrates through the GaAs contact layer till being exposed out of the substrate; and silicon oxide or polyimide glue is filled in the isolation trench. The invention further provides a fabrication method of the double-junction GaAs lamination laser photovoltaic cell, which comprises the steps of (1) providing a substrate, (2) allowing the conducting layer, the first tunnel junction, the first barrier layer, the bottom battery, the second tunnel junction, the second barrier layer, the top battery, the window layer and the GaAs contact layer to be grown on the substrate sequentially, (3) etching the GaAs contact layer till the surface of the substrate is exposed by a dry etching method or a wet etching method, to form the isolation trench, and (4) filling the isolation trench with the silicon oxide or polyimide glue.

The invention relates to a flip-chip double-junction indium gallium nitride solar battery structure which comprises a substrate, a gallium nitride nucleating layer produced on the substrate, an unintentional doped gallium nitride buffer layer produced on the gallium nitride nucleating layer, an n-type doped InaGa<1 minus a>N layer produced on the unintentional doped gallium nitride buffer layer, a p-type doped InaGa<1 minus a>N layer produced on the n-type doped InaGa<1 minus a>N layer, a p-type heavily doped InbGa<1 minus b>N layer produced on the p-type doped InaGa<1 minus a>N layer, an n-type heavily doped InbGa<1 minus b>N layer produced on the p-type heavily doped InbGa<1 minus b>N layer, an n-type doped IncGa<1 minus c>N layer produced on the n-type heavily doped InbGa<1 minus b>N layer, and a p-type doped IncGa<1 minus c>N produced on the n-type doped IncGa<1 minus c>N layer.

The invention discloses a photonic crystal back reflector provided with an adjustable forbidden band and applied to a silicon-based thin-film solar cell. The photonic crystal back reflector is composed of low-refraction-index media and high-refraction-index media which are overlapped in a periodic mode. Through adjustment of the thickness of a period, an average reflectivity of 96% can be obtained in a wave band of 500-750mm, an average reflectivity of 99% can be obtained in a wave band of 650-1100nm, and an average reflectivity of 99% can be obtained in a wave band of 700-1200nm. The photonic crystal back reflector is suitable for serving as a back reflector of a unijunction amorphous silicon thin film solar cell, a back reflector of a double-junction amorphous silicon / microcrystalline silicon laminated solar cell and a back reflector of a triple-junction amorphous silicon / amorphous silicon germanium / amorphous silicon laminated solar cell. The photonic crystal back reflector provided with the adjustable forbidden band and applied to the silicon-based thin-film solar cell has the advantages that due to the fact that a photonic crystal is used as the back reflector of the silicon-based thin-film solar cell, the problems that an Ag back reflector is high in cost and other metal back reflectors are low in reflectivity are solved, high efficiency and decrease of the cost of raw materials are guaranteed, improvement of the open-circuit voltage of the cell is facilitated, the stability of the cell is improved, the photonic crystal back reflector is compatible with the cell technology, reduction of equipment investment and the plant area is facilitated, and productivity is improved.

In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A sensing plane is defined along sides of the base region, the collector region, and the emitter region. The base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure which magnetically biases the free layer structure is made part of the collector region. In one variation, the emitter region has the in-stack LBL structure and the collector region has the pinned layer structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.

The invention discloses a graphene / Sip-n double-junction solar cell and a preparing method thereof. The Si surface of an n-type silicon slice (111) is mixed with B to achieve a p-type conducting layer, a Sip-n junction is formed between the p-type conducting layer and a liner n-type conducting layer. Under the condition that CH4 serves as reactant gas, Ar diluent gas is under the temperature of 900-1000 DEG C, a mode of chemical vapor deposition is adopted, a graphene thin layer with the thickness of 10-20 nm is generated on the surface of the p-type conducting layer, the graphene thin layer and the Sip-n junction are combined to form a schottky junction, and a double-junction solar cell is formed by the schottky junction and the Sip-n junction. Due to the fact that a heterojunction between the graphen and the Sip-n junction in the solar cell has important functions of transparent electric conduction, absorbing sunlight and collecting photoproduction electron-hole, conversion efficiency of luminous energy of the graphene / Sip-n double-junction solar cell reaches 2.26%.

A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.

The invention discloses a thin-film solar cell structurally comprising a substrate layer, a back electrode layer, a P-type CIGS (copper, indium, gallium and selenium) thin-film layer, an N-type CIGS cushion layer, a P+ layer, a P-type a-Si (amorphous silicon) layer, an I-type a-Si layer, an N-type a-Si layer, an N+ layer and an TCO (transparent conducting oxide) layer. The thin-film solar cell of the invention is an a-Si P-I-N junction layer has reasonable thickness design and the NIR (near infrared spectrum) energy can be completely absorbed by a CIGS P-N junction layer, thus greatly increasing the power of the thin-film solar cell; moreover, the P+ layer and the N+ layer which are ultrathin but heavily doped are respectively arranged outside the P-type a-Si layer and the N-type a-Si layer of the a-Si P-I-N junction layer, thus increasing the electric-field intensity of the I-type a-Si layer and increasing the power of the thin-film solar cell. Compared with the existing double-junction-layer structured solar cells of the same type, the thin-film solar cell of the invention can increase the power thereof by about 1.5% on average. The thin-film solar cell of the invention further has the advantages of high reliability and low manufacturing cost.

An improved solar powered decorative light system that can used on cloudy days and does not require the use of individual solar panels associated with each light in a decorative outdoor home holiday display. The improved solar powered decorative light system includes a plurality of decorative outdoor lights each having at least one LED and receiving electrical energy for illumination from a single solar receptor comprised of a double junction amorphous panel set. The decorative outdoor lights may further include replaceable decorative covers.

The invention relates to a double-junction depth PN junction photodiode based on standard CMOS (Complementary Metal Oxide Semiconductor) technology. The double-junction depth PN junction photodiode comprises a deep junction PN junction photodiode and a shallow junction PN junction photodiode, wherein the deep junction PN junction photodiode is composed of a semiconductor silicon P type substrate and an N type well, and the shallow junction PN junction photodiode is composed of a P type source-drain injection region and the N type well; the semiconductor silicon P type substrate is an anode of the deep junction PN junction photodiode, and the N type well is a cathode of the deep junction PN junction photodiode; the P type source-drain injection region is an anode of the shallow junction PN junction photodiode, and the N type well is a cathode of the shallow junction PN junction photodiode; the semiconductor silicon P type substrate form heavily doped ohmic contact through the P type source-drain injection region, and is leaded out through a metallic contact hole; and the N type well forms heavily doped ohmic contact through an N type source-drain injection region, and is leaded out through a metallic contact hole.

In one illustrative example, a three terminal magnetic sensor (TTM) has a base region, a collector region, and an emitter region. A sensing plane is defined along sides of the base region, the collector region, and the emitter region. A first barrier layer is located between the emitter region and the base region, and a second barrier layer is located between the collector region and the base region. The base region includes a free layer structure. The TTM further includes a self-pinned layer structure and an in-stack longitudinal biasing layer (LBL) structure which magnetically biases the free layer structure. The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.

The invention discloses a manufacture method for a GaInP / GaAs / InGaAsP / InGaAs four-junction cascading solar battery. The manufacture method is characterized by comprising the following steps of: taking GaAs as a support substrate, bonding a layer of InP on one face of the support substrate, and respectively growing a GaInP / GaAs double-junction battery in lattice matching with the GaAs on the GaAs substrate and an InGaAsP / InGaAs double-junction battery in lattice matching with InP on the InP layer by utilizing a double-face growing technique, wherein the thickness of the InP is 0.5-10 microns. According to the four-junction cascading solar battery provided by the invention, the consumption of an InP substrate is reduced, and meanwhile, a lattice mismatch problem for growing one-chip and multi-junction cascading solar battery materials is effectively solved; and the four-junction cascading solar battery realizing the high-voltage and low-current outputting is beneficial to improvement of the utilization of sunlight energy.

The invention relates to a two-junction microstrip circulator with a magnetic shielding case and an assembly formed by the same and belongs to the technical field of magnetic materials and devices. The two-junction microstrip circulator with the magnetic shielding case comprises a soft magnetic alloy bottom plate and a ferrite substrate positioned above the soft magnetic alloy bottom plate, wherein the upper surface of the ferrite substrate is provided with a double-junction circulation microstrip circuit, and the lower surface of the ferrite substrate is provided with a grounding metal layer. Permanent magnets are arranged above the geometric center of the junction circulation microstrip circuit, the magnetic shielding case is arranged above the permanent magnets, lower dielectric substrates are arranged among the permanent magnets and the two-junction circulation microstrip circuit to separate the permanent magnets from the two-junction circulation microstrip circuit, and upper dielectric substrates are arranged among the permanent magnets and the magnetic shielding case to separate the permanent magnets from the magnetic shielding case. The magnetic shielding case is formed by bending the edge of a soft magnetic flat plate alloy material downwards, the bottom of the bent edge of the magnetic shielding case does not contact with the ferrite substrate, the smallest horizontal enclosure dimension of the magnetic shielding case is larger than the largest distance between outer edges of the two permanent magnets and smaller than the side length of the ferrite substrate. The two-junction microstrip circulator with the magnetic shielding case has a good magnetic shielding function, and is simple in structure, stable in performance, convenient to produce and debug and capable of meeting application needs of increasing miniaturization and high integration.

The invention aims to disclose a perovskite-back contact crystalline silicon laminated solar cell. The perovskite-back contact crystalline silicon laminated solar cell adopts a double-junction laminated structure, the bottom battery is a back contact crystalline silicon solar cell, and the top battery is a perovskite solar cell; the back contact solar cell is a back junction structure, and sequentially includes an electrode, a back surface passivation layer, a P+ / n+ region, a crystalline silicon substrate, a front surface structure and a front surface passivation layer from bottom to top; andthe perovskite solar cell is prepared on the front surface of the crystalline silicon substrate. Compared with the prior art, the double-junction laminated structure is adopted, and through the combination of the back contact crystalline silicon solar cell and the perovskite solar cell, the utilization of light energy can be maximized, the open circuit voltage and short circuit current of the solar cell can be increased, and the efficiency of the solar cell can be improved; and the scheme of the invention is simple in preparation process, has good combination with a production line, can effectively control the manufacturing cost of the solar cell, and achieves the purpose of the invention.

The invention discloses a manufacturing method of a double-junction serial InGaAs / InGaAsP (indium gallium arsenium / indium gallium arsenium phosphorus) efficient double-end solar cell which is applied to a solar spectral long-wave band. According to the manufacturing method, the p+InGaAs / n+InGaAs is utilized as a tunnel junction; an InGaAs solar cell result and an InGaAsP solar cell result basing on an InP (indium phosphorus) substrate are subjected to serial growth, so that the wavelengths of the InGaAs solar cell result and the InGaAsP solar cell result meet the absorption of energy at 0.74 eV and 1.05 eV; and the absorption and the energy conversion of the full spectrum of solar light are achieved furthest. As an ordinary mechanical cascade solar cell system in a long-wavelength solar spectrum uses a plurality of different substrates, the higher cost is caused; the manufacturing method only uses one substrate, so that the cost is greatly decreased; and simultaneously, by using a serial double-end device structure, the problems of the electrode design and the collimation of different cells, namely an upper cell, a middle cell and a lower cell, in a mechanical cascade or a three-end device are further solved effectively.

The invention relates to a small organic molecule donor material based double-junction solar cell device and a preparation method thereof. The solar cell device comprises a conductive anode substrate, an anode modification layer, a front cell active layer, an electron collecting layer, a hole connecting layer, a back cell active layer, a cathode modification layer and a cathode which are sequentially laminated. The double-junction solar cell adopts an absorption spectrum complementary small organic molecule material to act as a donor material in the front and back sub-cell active layers. The anode modification layer is made of cuprous rhodanide or molybdenum oxide. The electron collecting layer is made of zinc oxide nano particles. The hole colleting layer is made of poly(3,4-ethylenedioxythiophene) / poly(styrene sulfonate) (PEDOT:PSS) with the PH-value being neutral. The invention further provides a preparation method of the double-junction solar cell. In the preparation process of the device, the metal cathode is prepared through evaporation, and the rest of thin films are prepared by adopting a method of solution spin coating.

The invention discloses a graphene double-junction solar battery and a preparation method thereof and belongs to the technical field of new energy. The graphene double-junction solar battery is composed of a schottky junction composed of a mono-crystalline silicon surface and a piece of graphene film, and a PN junction in a piece of poly-crystalline silicon film, and the schottky junction is connected with the PN junction through a tunneling junction to match with short-circuit current of the double-junction graphene battery. Compared with a directly connected double-junction graphene solar battery, the graphene double-junction solar battery solves the problem of open-circuit voltage reduction of the battery due to built-in electric field direction inversion and improves the photon-generated carrier separating and gathering efficiency, and accordingly the photoelectric conversion efficiency of the graphene solar battery is improved.

The invention relates to a CIGS / CGS double-junction laminated thin film solar cell. The CIGS / CGS double-junction laminated thin film solar cell comprises a narrow-band-gap CIGS bottom battery and a wide-band-gap CGS top battery and is characterized in that the bottom battery and the top battery are connected in series into a whole by the interior of a connection layer, the connection layer comprises a transparent metal oxide conductive layer and a nanometer metal conductive layer, the transparent metal oxide conductive layer is arranged on the bottom battery, the nanometer metal conductive layer is arranged on the top battery, a conductive window of the CGS top battery comprises an ITO composite conductive thin film layer and an ITO thin film layer, and a silicon nitride anti-reflection layer is arranged on the surfaces of the conductive window layer and an electrode layer of the CGS top battery. In the CIGS / CGS double-junction laminated thin film solar cell, a transparent metal oxide and a nanometer metal thin film are combined as the connection layer of the bottom battery and the top battery, the problem of process compatibility between the bottom battery and the top battery is solved, the internal electrical connection between the bottom battery and the top battery is achieved, the cell fabrication process is simplified, the cell fabrication cost is reduced, the cell is simple in structure, meanwhile, the conductive window layer is high in transmittance and electric conductivity and good in passivation effect, the series resistance is low, and the photoelectric conversion efficiency of the thin film solar cell is effectively improved.

The invention relates to an optimization method of an n type crystalline silicon heterojunction with intrinsic thin-layer (HIT) solar cell structure. According to the optimization method, gold nanoparticles (Au-NPs) are inlaid between a p type emission layer (p-a-Si:H) and a transparent electric conduction film (n-AZO), so that the interface electrical transmission characteristics of the p type emission layer and the transparent electric conduction film can be improved, and the efficiency of the HIT cell can be improved; a high-work function considering optical and electrical properties both is adopted, and therefore, the solving of the problem of blocking of carrier transport by a schottky barrier which is caused by mismatch of work functions of the p type emission layer and the n type AZO can be facilitated, and surface plasmon polaritons can be formed, and the scattering and absorption of light in cell can be enhanced through the resonance effect of the surface plasmon polaritons, and thus, the photoelectric conversion efficiency of the HIT cell can be further improved. The optimization method of the invention can be applied to efficient single-junction and double-junction crystalline silicon HIT solar cells and interdigitated back contact type (IBC) heterojunction solar cells.