109 results about "Double junction" patented technology

The present invention provides a low resistance high magnetoresistance (MR) device comprised of a junction of two magnetic elements separated by a magnesium oxide (MgO) layer doped with such metals as Al and Li. Such device can be used as a sensor of magnetic field in magnetic recording or as a storage element in magnetic random access memory (MRAM). The invention provides a high-MR device possessing a diode function, comprised of a double junction of two outer magnetic elements separated by two MgO insulating layer and a center MgO layer doped with such metals as Al and Li. Such device provides design advantages when used as a storage element in MRAM. The invention with MR wherein a gate electrode is placed in electrical or physical contact to the center layer of the double tunnel junction.

A portable solar power source is provided which will convert solar energy into electrical energy to provide electrical power to an array of devices normally accompanying those who enjoy being in outdoor areas or on rivers or lakes. The device is made to be portable by having wheels and a handle so that it may be pulled like a cart or wagon. The portable device of the present invention further includes one or more solar panels, which are deployed from a substantially horizontal position to a substantially vertical position with respect to the transport device. In the preferred embodiment the solar panels are double junction amorphous solar panels. Such panels have the greatest efficiency and produce electrical energy from light energy even if the solar panels are not in the direct sunlight.

A portable solar power source is provided which will convert solar energy into electrical energy to provide electrical power to an array of devices normally accompanying those who enjoy being in outdoor areas or on rivers or lakes. The device is made to be portable by having wheels and a handle so that it may be pulled like a cart or wagon. The portable device of the present invention further includes one or more solar panels, which are deployed from a substantially horizontal position to a substantially vertical position with respect to the transport device. In the preferred embodiment the solar panels are double junction amorphous solar panels. Such panels have the greatest efficiency and produce electrical energy from light energy even if the solar panels are not in the direct sunlight.

The present invention provides a low resistance high magnetoresistance (MR) device comprised of a junction of two magnetic elements separated by a magnesium oxide (MgO) layer doped with such metals as Al and Li. Such device can be used as a sensor of magnetic field in magnetic recording or as a storage element in magnetic random access memory (MRAM). The invention provides a high-MR device possessing a diode function, comprised of a double junction of two outer magnetic elements separated by two MgO insulating layer and a center MgO layer doped with such metals as Al and Li. Such device provides design advantages when used as a storage element in MRAM. The invention with MR wherein a gate electrode is placed in electrical or physical contact to the center layer of the double tunnel junction.

The invention discloses a high-efficiency low-cost copper indium gallium selenium / perovskite double-junction solar photocell prepared through an all-solution method. The double-junction solar photocell comprises a metal back electrode, a copper indium gallium selenium absorbing layer, a P-type buffer layer, a window layer, a carrier composite layer, a hole transporting layer, a perovskite absorbing layer, an electron transporting layer and a transparent oxide electrode. The high-efficiency double-junction solar photocell can be prepared through the all-solution method and has the advantages of being low in cost and capable of being produced on a large scale. Copper indium gallium selenium and perovskite serve as the absorbing layers of sunlight; on one hand, the copper indium gallium selenium with the adjustable bandwidth and the high-conversion-efficiency perovskite made of broadband gap materials can effectively cover solar spectra and be utilized efficiently; on the other hand, both the copper indium gallium selenium and the perovskite can be prepared through the all-solution method, so a whole laminating device can have higher conversion efficiency and maintain low production cost at the same time.

An improved solar powered decorative light system that can used on cloudy days and does not require the use of individual solar panels associated with each light in a decorative outdoor home holiday display. The improved solar powered decorative light system includes a plurality of decorative outdoor lights each having at least one LED and receiving electrical energy for illumination from a single solar receptor comprised of a double junction amorphous panel set. The decorative outdoor lights may further include replaceable decorative covers.

The invention provides a double-junction GaAs lamination laser photovoltaic cell which comprises a GaAs substrate, and an N-type GaAs conducting layer, a first tunnel junction, a P-type AlGaAs ((Al)GaInP) first barrier layer, a bottom battery, a second tunnel junction, a P-type AlGaAs ((Al)GaInP) second barrier layer, a top battery, an AlGaAs (Ga0.51In0.49P) window layer and a GaAs contact layer that are grown on the substrate sequentially, and further comprises an isolation trench, wherein the isolation trench penetrates through the GaAs contact layer till being exposed out of the substrate; and silicon oxide or polyimide glue is filled in the isolation trench. The invention further provides a fabrication method of the double-junction GaAs lamination laser photovoltaic cell, which comprises the steps of (1) providing a substrate, (2) allowing the conducting layer, the first tunnel junction, the first barrier layer, the bottom battery, the second tunnel junction, the second barrier layer, the top battery, the window layer and the GaAs contact layer to be grown on the substrate sequentially, (3) etching the GaAs contact layer till the surface of the substrate is exposed by a dry etching method or a wet etching method, to form the isolation trench, and (4) filling the isolation trench with the silicon oxide or polyimide glue.

The invention relates to a two-junction microstrip circulator with a magnetic shielding case and an assembly formed by the same and belongs to the technical field of magnetic materials and devices. The two-junction microstrip circulator with the magnetic shielding case comprises a soft magnetic alloy bottom plate and a ferrite substrate positioned above the soft magnetic alloy bottom plate, wherein the upper surface of the ferrite substrate is provided with a double-junction circulation microstrip circuit, and the lower surface of the ferrite substrate is provided with a grounding metal layer. Permanent magnets are arranged above the geometric center of the junction circulation microstrip circuit, the magnetic shielding case is arranged above the permanent magnets, lower dielectric substrates are arranged among the permanent magnets and the two-junction circulation microstrip circuit to separate the permanent magnets from the two-junction circulation microstrip circuit, and upper dielectric substrates are arranged among the permanent magnets and the magnetic shielding case to separate the permanent magnets from the magnetic shielding case. The magnetic shielding case is formed by bending the edge of a soft magnetic flat plate alloy material downwards, the bottom of the bent edge of the magnetic shielding case does not contact with the ferrite substrate, the smallest horizontal enclosure dimension of the magnetic shielding case is larger than the largest distance between outer edges of the two permanent magnets and smaller than the side length of the ferrite substrate. The two-junction microstrip circulator with the magnetic shielding case has a good magnetic shielding function, and is simple in structure, stable in performance, convenient to produce and debug and capable of meeting application needs of increasing miniaturization and high integration.

The invention discloses a manufacturing method of a double-junction serial InGaAs / InGaAsP (indium gallium arsenium / indium gallium arsenium phosphorus) efficient double-end solar cell which is applied to a solar spectral long-wave band. According to the manufacturing method, the p+InGaAs / n+InGaAs is utilized as a tunnel junction; an InGaAs solar cell result and an InGaAsP solar cell result basing on an InP (indium phosphorus) substrate are subjected to serial growth, so that the wavelengths of the InGaAs solar cell result and the InGaAsP solar cell result meet the absorption of energy at 0.74 eV and 1.05 eV; and the absorption and the energy conversion of the full spectrum of solar light are achieved furthest. As an ordinary mechanical cascade solar cell system in a long-wavelength solar spectrum uses a plurality of different substrates, the higher cost is caused; the manufacturing method only uses one substrate, so that the cost is greatly decreased; and simultaneously, by using a serial double-end device structure, the problems of the electrode design and the collimation of different cells, namely an upper cell, a middle cell and a lower cell, in a mechanical cascade or a three-end device are further solved effectively.

A three terminal magnetic sensor (TTM) has a base region, a collector region which is adjacent the base region, an emitter region, and a barrier region which separates the emitter region from the base region. A sensing plane is defined along sides of the base region, the collector region, and the emitter region. An insulator layer is offset from the sensing plane and adjacent the collector region and the base region. A metal layer is offset from the sensing plane and in-plane and in contact with magnetic materials of the base region. This metal layer advantageously reduces an electrical resistance of the base region, which reduces signal noise in the TTM. Preferably, the metal layer has an electrical resistivity of less than 10 μΩ-centimeter (e.g. copper, gold, or ruthenium). The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.