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Graphene double-junction solar battery and preparation method thereof

A technology of solar cells and graphene, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as reducing battery open circuit voltage and short circuit current, affecting battery photoelectric conversion efficiency, etc., to increase short circuit current and open circuit voltage, and improve photoelectricity Effect of conversion efficiency and efficiency improvement

Active Publication Date: 2015-02-04
CHANGSHU INSTITUTE OF TECHNOLOGY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the opposite direction of the built-in electric field of the Schottky junction and the built-in electric field of the PN junction in the existing directly connected double-junction graphene battery, the open-circuit voltage and short-circuit current of the battery are reduced, which affects the improvement of the photoelectric conversion efficiency of the battery.

Method used

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  • Graphene double-junction solar battery and preparation method thereof
  • Graphene double-junction solar battery and preparation method thereof
  • Graphene double-junction solar battery and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0026] See figure 1 and figure 2 , first at a doping concentration of 10 15 / cm 3 One side of the N-type monocrystalline silicon wafer 3 is prepared by plasma vapor phase chemical deposition with a doping concentration of 10 19 / cm 3 N-type polysilicon film 4 with a thickness of 50nm; then sequentially deposited on its surface with a doping concentration of 10 15 / cm 3 The P-type polysilicon film 5 and the N-type polysilicon film 6 both have a thickness of 30um. The P-type polysilicon film 5 and the N-type polysilicon film 6 form a PN junction 10 . Prepare a 100nm silicon dioxide layer 2 on the other side of the N-type single crystal silicon wafer 3, and then use a spraying process on the surface of the silicon dioxide layer 2 and the surface of the single crystal silicon 3 exposed by the through hole of the silicon dioxide layer 2 A 10nm graphene film 1 is prepared, and the graphene film 1 is combined with an N-type single crystal silicon wafer 3 after drying. Then a...

Embodiment 2

[0028] Please combine embodiment 1, at first the doping concentration is 10 14 / cm 3 One side of the P-type single crystal silicon wafer 3 is sequentially prepared with a doping concentration of 10 by plasma vapor chemical deposition method. 19 / cm 3 P-type polysilicon thin film 4 with a thickness of 150nm; then sequentially deposited on its surface with a doping concentration of 10 14 / cm 3 The N-type polysilicon film 5 and the P-type polysilicon film 6 both have a thickness of 50um. The N-type polysilicon film 5 and the P-type polysilicon film 6 form a PN junction 10 . Prepare a 100nm silicon dioxide layer 2 on the other side of the P-type monocrystalline silicon wafer 3, and then use a spraying process on the surface of the silicon dioxide layer 2 and the surface of the monocrystalline silicon 3 exposed by the through hole of the silicon dioxide layer 2 A 10nm graphene film 1 is prepared, and the graphene film 1 is combined with a P-type single crystal silicon wafer 3 ...

Embodiment 3

[0030] Please combine embodiment 1, at first the doping concentration is 10 14 / cm 3 One side of the P-type single crystal silicon wafer 3 is sequentially prepared with a doping concentration of 10 by plasma vapor chemical deposition method. 20 / cm 3 The N-type polysilicon film and the doping concentration is 10 20 / cm 3 The P-type polysilicon thin film constitutes the tunnel junction 4 with a thickness of 100nm; 14 / cm 3The N-type polysilicon film 5 and the P-type polysilicon film 6 both have a thickness of 50um. The N-type polysilicon film 5 and the P-type polysilicon film 6 form a PN junction 10 . Prepare a 100nm silicon dioxide layer 2 on the other side of the P-type monocrystalline silicon wafer 3, and then use a spraying process on the surface of the silicon dioxide layer 2 and the surface of the monocrystalline silicon 3 exposed by the through hole of the silicon dioxide layer 2 A 10nm graphene film 1 is prepared, and the graphene film 1 is combined with a P-type...

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Abstract

The invention discloses a graphene double-junction solar battery and a preparation method thereof and belongs to the technical field of new energy. The graphene double-junction solar battery is composed of a schottky junction composed of a mono-crystalline silicon surface and a piece of graphene film, and a PN junction in a piece of poly-crystalline silicon film, and the schottky junction is connected with the PN junction through a tunneling junction to match with short-circuit current of the double-junction graphene battery. Compared with a directly connected double-junction graphene solar battery, the graphene double-junction solar battery solves the problem of open-circuit voltage reduction of the battery due to built-in electric field direction inversion and improves the photon-generated carrier separating and gathering efficiency, and accordingly the photoelectric conversion efficiency of the graphene solar battery is improved.

Description

technical field [0001] The invention relates to a solar cell and a manufacturing method thereof, in particular to a graphene double-junction solar cell and a manufacturing method thereof, and belongs to the technical field of new energy sources. Background technique [0002] Energy and environmental issues have always been hot issues affecting human survival and development. As an inexhaustible and inexhaustible renewable energy source, solar energy has received the most extensive attention in its development and utilization. Since scientists prepared the first solar cell in the middle of the 19th century, solar cells have been closely watched by various countries. Preparation of low-cost, environmentally friendly and efficient solar cells has become the goal pursued by researchers from all over the world. [0003] A solar cell is a device that uses the photovoltaic effect of semiconductor materials to convert light energy into electrical energy. According to the structur...

Claims

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Application Information

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IPC IPC(8): H01L31/0725H01L31/18
CPCH01L31/0725H01L31/18Y02E10/50Y02P70/50
Inventor 况亚伟刘玉申马玉龙徐竞沈小鹏冯金福
Owner CHANGSHU INSTITUTE OF TECHNOLOGY
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