Double-junction single-photon avalanche diode and production method thereof
A single-photon avalanche and manufacturing method technology, applied in the field of single-photon detection, can solve problems such as low photon detection efficiency, achieve high photon detection efficiency, improve photon detection efficiency, and increase the effect of avalanche multiplication area
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[0018] The present invention will be further described below in conjunction with the accompanying drawings.
[0019] refer to figure 1 , a double-junction single-photon avalanche diode, including a cylindrical p-substrate layer 1, a p-well charge layer 2, an inversion deep n-well 4, an n-well charge layer 7, and a p+-type light absorption layer 9, and an annular p doping control region 3, n well layer 5, n+ type semiconductor layer 6, p-type semiconductor layer 8, p well layer 10, p+ type semiconductor layer 11, GND electrode 12, cathode electrode 13, anode electrode 14 and two Silicon oxide layer 15; p-substrate layer 1, p well charge layer 2, p doping control region 3, inversion deep n well 4, n well layer 5, n+ type semiconductor layer 6, n well charge layer 7, p- Type semiconductor layer 8, p+ type light absorbing layer 9, p well layer 10, p+ type semiconductor layer 11, GND electrode 12, cathode electrode 13, anode electrode 14 and silicon dioxide layer 15 are all arrang...
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