Wafer-bonding-based triple-junction solar cell and preparation method thereof
A solar cell, wafer bonding technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as the difficulty of triple junction cells
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[0072] Aiming at the deficiencies of the prior art, the inventor of this case has designed a GaInP / GaAs / InGaAsP triple-junction solar cell based on wafer bonding after long-term research and practice. Combined, the bandgap combination is 1.90eV, 1.42eV, ~1.00eV, and a balance point is found to reduce the battery current mismatch and reduce the difficulty of material growth.
[0073] The triple-junction solar cell based on wafer bonding that the present invention relates to mainly includes two types of structures:
[0074] The first type of structure is that both the GaInP / GaAs double-junction cell and the InGaAsP single-junction cell use a P-type substrate, and a tunnel junction is grown on the window layer of the InGaAsP single-junction cell to realize the conversion from N-type to P-type. Methods as below:
[0075] (1) GaInP / GaAs double junction cell is grown by MOCVD method, its structure is as follows figure 1 Shown:
[0076] (1) growing a P-type GaAs buffer layer 02 on...
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