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High-efficiency low-cost copper indium gallium selenium / perovskite double-junction solar photocell prepared through all-solution method

A copper indium gallium selenide and solar energy technology, which is applied in the field of full solution preparation of photovoltaic cells, can solve problems such as low short-circuit current, and achieve the effect of reducing production costs

Active Publication Date: 2014-09-03
苏州柯利达集团有限公司
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  • Abstract
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Problems solved by technology

On the contrary, the wide bandgap material gives high voltage but low short circuit current

Method used

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  • High-efficiency low-cost copper indium gallium selenium / perovskite double-junction solar photocell prepared through all-solution method

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Embodiment Construction

[0022] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] Such as figure 1 Shown is a schematic diagram of the structure of the new self-assembled nano-octahedral material infrared detector. The device comprises: a metal back electrode 1; a copper indium gallium selenide layer 2, the light absorbing layer 2 is made of a copper indium gallium selenide material on the metal back electrode 1 by a solution method; a buffer layer 3; a window layer 4; an intermediate composite layer 5. Adopt PN junction double-layer structure to effectively improve the recombination efficiency of electron holes; n-type transport layer 6; perovskite absorption layer 7; p-type transport layer 8 and transparent conductive electrode 9.

[0024] The metal back electrode 1 is usually a molybdenum electrode with a thickness of 200-2000 nanometers but not limited to molybdenum, and also includes other suitable metal mater...

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Abstract

The invention discloses a high-efficiency low-cost copper indium gallium selenium / perovskite double-junction solar photocell prepared through an all-solution method. The double-junction solar photocell comprises a metal back electrode, a copper indium gallium selenium absorbing layer, a P-type buffer layer, a window layer, a carrier composite layer, a hole transporting layer, a perovskite absorbing layer, an electron transporting layer and a transparent oxide electrode. The high-efficiency double-junction solar photocell can be prepared through the all-solution method and has the advantages of being low in cost and capable of being produced on a large scale. Copper indium gallium selenium and perovskite serve as the absorbing layers of sunlight; on one hand, the copper indium gallium selenium with the adjustable bandwidth and the high-conversion-efficiency perovskite made of broadband gap materials can effectively cover solar spectra and be utilized efficiently; on the other hand, both the copper indium gallium selenium and the perovskite can be prepared through the all-solution method, so a whole laminating device can have higher conversion efficiency and maintain low production cost at the same time.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices, and relates to a new double-junction high-efficiency solar photovoltaic cell based on copper indium gallium selenide and perovskite and a full solution preparation method of the photovoltaic cell. Background technique [0002] The continuously increasing total energy demand, the depletion of traditional petrochemical energy and the abrupt climate change caused by the greenhouse effect all force people to increase the development of new energy. And solar energy has become the first choice of alternative energy because of its inexhaustible, inexhaustible and green and clean advantages. Since the discovery of the photovoltaic effect in silicon diodes in 1954, expensive production costs have limited the large-scale application of solar energy. Taking the United States as an example, less than 0.1% of energy comes from solar energy. On the one hand, the non-vacuum solution method has the advanta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCY02E10/549H10K71/12H10K30/211Y02P70/50
Inventor 钱磊章婷杨一行谢承智刘德昂冯宗宝
Owner 苏州柯利达集团有限公司
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