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Double-junction GaAs lamination laser photovoltaic cell and fabrication method thereof

A laser photovoltaic cell and lamination technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as power failure, and achieve the effects of improving battery efficiency, reducing losses, and saving process time.

Inactive Publication Date: 2012-08-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] GaAs is a III / V group semiconductor material, and the band gap Eg at room temperature is 1.428 eV. GaAs PN junction cells can be used to convert 808 nm laser energy into electrical energy and used as laser cells in laser energy supply systems, but GaAs The open circuit voltage of the battery is only 1 V, so it cannot be directly used as the power supply in the electronic device circuit

Method used

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  • Double-junction GaAs lamination laser photovoltaic cell and fabrication method thereof
  • Double-junction GaAs lamination laser photovoltaic cell and fabrication method thereof
  • Double-junction GaAs lamination laser photovoltaic cell and fabrication method thereof

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no. 1 Embodiment approach

[0026] figure 1 It is a schematic cross-sectional view of the first embodiment of the double-junction GaAs stacked laser photovoltaic cell.

[0027] figure 2 It is a schematic cross-sectional view of the isolation groove structure of the first embodiment of the double-junction GaAs stacked laser photovoltaic cell.

[0028] This embodiment provides a double-junction GaAs laminated laser photovoltaic cell, including a semi-insulating GaAs substrate 01, and an N-type GaAs conductive layer 02, a first tunnel junction 17, and a bottom substrate 01 grown sequentially on the substrate 01. Cell 18 , second tunnel junction 19 , top cell 20 , window layer 15 and GaAs contact layer 16 .

[0029] The double-junction GaAs laminated laser photovoltaic cell further includes an isolation groove 22, the isolation groove 22 penetrates from the GaAs contact layer 16 to the substrate 01 until the substrate 01 is exposed, and the isolation groove 22 is filled with Silicon oxide or polyimide gl...

no. 2 Embodiment approach

[0048] Prepare the structure as figure 1 The double-junction GaAs laminated laser photovoltaic cell comprises the steps of:

[0049] (1) growing an N-type GaAs conductive layer 02 on a semi-insulating GaAs substrate 01;

[0050] (2) growing an N-type AlGaAs ((Al)GaInP) third barrier layer 03 on the N-type GaAs conductive layer 02;

[0051] (3) On the third barrier layer 03, the N-type doping concentration is greater than 1×10 19 cm -3 The first GaAs (Ga 0.51 In 0.49 P) layer 04, the re-growth P-type doping concentration is greater than 1×10 19 cm -3 the first (Al)GaAs layer 05 to form a first tunnel junction 17;

[0052] (4) growing a P-type AlGaAs ((Al)GaInP) first barrier layer 06 of the first tunnel junction 17 on the first (Al)GaAs layer 05, which can also be used as the back field layer of the bottom cell 18;

[0053] (5) Growing the first P region 07 of the P-type GaAs absorption layer on the above-mentioned first barrier layer 06, and growing the first N region ...

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Abstract

The invention provides a double-junction GaAs lamination laser photovoltaic cell which comprises a GaAs substrate, and an N-type GaAs conducting layer, a first tunnel junction, a P-type AlGaAs ((Al)GaInP) first barrier layer, a bottom battery, a second tunnel junction, a P-type AlGaAs ((Al)GaInP) second barrier layer, a top battery, an AlGaAs (Ga0.51In0.49P) window layer and a GaAs contact layer that are grown on the substrate sequentially, and further comprises an isolation trench, wherein the isolation trench penetrates through the GaAs contact layer till being exposed out of the substrate; and silicon oxide or polyimide glue is filled in the isolation trench. The invention further provides a fabrication method of the double-junction GaAs lamination laser photovoltaic cell, which comprises the steps of (1) providing a substrate, (2) allowing the conducting layer, the first tunnel junction, the first barrier layer, the bottom battery, the second tunnel junction, the second barrier layer, the top battery, the window layer and the GaAs contact layer to be grown on the substrate sequentially, (3) etching the GaAs contact layer till the surface of the substrate is exposed by a dry etching method or a wet etching method, to form the isolation trench, and (4) filling the isolation trench with the silicon oxide or polyimide glue.

Description

technical field [0001] The invention relates to the field of laser photovoltaic cells, in particular to a double-junction GaAs lamination laser photovoltaic cell and a preparation method thereof. Background technique [0002] The laser energy supply system is an innovative energy transfer system. With this system, the light emitted by the laser source is transmitted to the laser photovoltaic cell through the optical fiber, which can provide a stable power output. The conversion of light into electricity through optical fiber has more advantages than traditional metal wire and coaxial cable power transmission technology, and can be applied in radio communication, industry where electromagnetic interference needs to be eliminated or electronic devices need to be isolated from the surrounding environment. Sensors, national defense, aviation, medicine, energy and other directions have important applications. The working principle of laser photovoltaic cells is similar to that o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0725H01L31/0735H01L31/18
CPCY02E10/50Y02E10/544Y02P70/50
Inventor 赵春雨董建荣赵勇明孙玉润李奎龙于淑珍杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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