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Upside-down mounting binode In-Ga-N solar battery structure

A technology of solar cells and indium gallium nitrogen, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as the difficulty of growing indium gallium nitrogen with low indium components, improve photoelectric conversion efficiency, solve the problem of pn junction reverse bias, The effect of great work efficiency

Inactive Publication Date: 2009-02-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0009] Aiming at the characteristics of epitaxial growth of InGaN materials, the present invention adopts a flip-chip structure, avoiding the difficult problem of growing InGaN with low indium composition on InGaN with high indium composition

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  • Upside-down mounting binode In-Ga-N solar battery structure

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Embodiment Construction

[0033] The key of the present invention lies in the use of indium gallium nitride (InGaN) ternary alloy material, the excellent radiation resistance performance of the alloy material, and the optimized bandgap width of the alloy by changing the components of indium and gallium, and by precisely controlling the growth conditions , to obtain a high-quality flip-chip double-junction InGaN solar cell structure material, which can theoretically reach a maximum theoretical photoelectric conversion efficiency of 50%.

[0034] In multi-junction series solar cells, since each sub-cell is composed of pn junctions, if they are directly connected in series, the pn junctions will be reverse-biased and non-conductive. This problem can be solved by using a tunnel junction structure. The present invention adopts unique heavily doped pn junction In b Ga 1-b N(0≤b≤1) is used as the tunnel junction of flip-chip double-junction InGaN solar cells, which effectively solves the pn junction reverse ...

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Abstract

The invention relates to a flip-chip double-junction indium gallium nitride solar battery structure which comprises a substrate, a gallium nitride nucleating layer produced on the substrate, an unintentional doped gallium nitride buffer layer produced on the gallium nitride nucleating layer, an n-type doped InaGa<1 minus a>N layer produced on the unintentional doped gallium nitride buffer layer, a p-type doped InaGa<1 minus a>N layer produced on the n-type doped InaGa<1 minus a>N layer, a p-type heavily doped InbGa<1 minus b>N layer produced on the p-type doped InaGa<1 minus a>N layer, an n-type heavily doped InbGa<1 minus b>N layer produced on the p-type heavily doped InbGa<1 minus b>N layer, an n-type doped IncGa<1 minus c>N layer produced on the n-type heavily doped InbGa<1 minus b>N layer, and a p-type doped IncGa<1 minus c>N produced on the n-type doped IncGa<1 minus c>N layer.

Description

technical field [0001] The invention belongs to the technical field of inorganic optoelectronics, and in particular relates to a flip-chip double-junction indium gallium nitrogen solar cell structure. The invention adopts a novel InGaN ternary alloy semiconductor material, and its structure can be applied to the manufacture of InGaN-based novel high-efficiency solar cells. Background technique [0002] A solar cell is a device that converts solar energy directly into electrical energy. Since Bell Laboratories made the world's first solar cell with practical value in 1954, scientists from all over the world have been attracted to research and develop solar cells of various types and uses. [0003] At present, one of the main problems encountered in the development and utilization of solar cells is their low photoelectric conversion efficiency. Especially when solar cells are used in the space field, the photoelectric conversion efficiency of solar cells is required to be hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/06H01L31/065
CPCY02E10/50
Inventor 王晓亮杨翠柏肖红领胡国新冉学军王翠梅张小宾李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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